HAMMING CODE-ERROR DETECTION CORRECTION Search Results

E160

Abstract: E193 MC10193 SY100E193 SY10E193 SECDED
Contextual Info: SY10E193 SY100E193 FINAL ERROR DETECTION/ CORRECTION CIRCUIT FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E193 are error detection and correction EDAC circuits designed for use in new, high- performance

SECDED

Abstract: E160 E193 MC10193 SY100E193 SY10E193
Contextual Info: ERROR DETECTION/ CORRECTION CIRCUIT FEATURES SY10E193 SY100E193 DESCRIPTION • Hamming code generation ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E193 are error detection and correction EDAC circuits designed for use in new, high- performance

E160

Abstract: E193 MC10193 SY100E193 SY10E193
Contextual Info: Micrel, Inc. SY10E193 SY100E193 SY10E193 ERROR DETECTION/ CORRECTION CIRCUIT FEATURES SY100E193 DESCRIPTION • Hamming code generation ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E193 are error detection and correction EDAC circuits designed for use in new, high- performance

74F632

Abstract: 74F632QC C1995 DB31 DP8406 DP8406QV V52A F632 Diode cbn 9579
Contextual Info: DP8406 54F 74F632 32-Bit Parallel Error Detection and Correction Circuit General Description The DP8406 device is a 32-bit parallel error detection and correction circuit (EDAC) in a 52-pin or 68-pin package The EDAC uses a modified Hamming code to generate a 7-bit

54HSC630

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS 54HSC/T630 APRIL 1995 DS3595-3.4 54HSC/T630 RADIATION HARD 16-BIT PARALLEL ERROR DETECTION & CORRECTION The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to

Contextual Info: 632 54F/74F632 32-Bit Parallel Error Detection and Correction Circuit The 32-bit parallel error detection and correction circuit EDAC in p £ ka g e . The EDAC uses a modified Hamming code to generate a 7-fflinph<Kk w fljb ito m a 32-bit data word. This check word is

Contextual Info: * ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • ■ ■ ■ ■ ■ Hamming code generation 8-bit wide Expandable for more width Provides parity register ESD protection of 2000V Fully compatible with industry standard 10KH,

XTD22

Contextual Info: AT&T Microelectronics Product Specification Sheet 1042BL initial Use 5ESS EDC32 Description The 1042BL EDC32 performs error detection and correction on a 32-bit data word using seven bits of correction code. The correction code generated by the device is a modified Hamming

Contextual Info: CM CO O £3 National ÆÆ Semiconductor 54F/74F632 32-Bit Parallel Error Detection and Correction Circuit General Description The ’F632 device is a 32-bit parallel error detection and correction circuit (EDAC in a 52-pin or 68-pin package. The EDAC uses a modified Hamming code to generate a 7-bit

Contextual Info: S i GEC PLESS EY S E M IC O ND U CTO RS DS3595-3.4 54HSC/T630 RADIATION HARD 16-BIT PARALLEL ERROR DETECTION & CORRECTION The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The

hamming code

Abstract: "hamming code" 4 bit hamming code BU-203
Contextual Info: AmZ8160 Cascadable 16-Bit Error Detection and Correction Unit ADVANCED DATA DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • Modified Hamming Code Detects multiple errors and corrects single bit errors in a parallel data word. Ideal for use in dynamic memory

Z8000

Abstract: "hamming code"
Contextual Info: Am2960 Cascadable 16-Bit Error Detection and Correction Unit ADVANCED DATA DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • Modified Hamming Code Detects multiple errors and corrects single bit errors in a parallel data word. Ideal for use in dynam ic memory

Contextual Info: GEC P L E S S E Y S E M I C O N D U C T O R S DS3595-3.3 54HSC/T630 RADIATION HARD 16-BIT PARALLEL ERROR DETECTION & CORRECTION The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The

Contextual Info: * ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SY10E193 SY100E193 SEMICONDUCTOR FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully compatible with industry standard 10KH,

XG404

Abstract: DB10 DS3595-5 ds35954 DS3595
Contextual Info: 54HSC/T630 54HSC/T630 Radiation hard 16-Bit ParallelError Detection & Correction Replaces June 1999 version, DS3595-4.0 DS3595-5.0 January 2000 The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The

f630

Abstract: bil3 hamming code
Contextual Info: 630 54F/74F630 Connection Diagrams 16-Bit Error Detection and Correction Circuit 3-State Outputs T— r '—'' D EFpr M jv c c DB q [~~2~ ~27] SEF Descrip D B il~3~ ÏÜ S , The 'F630 is a 16-bit Error Detection And Correction EDAC circuit with 3-state oufpu4PR*Uj£s a modified Hamming code to generate a 6-bit

Contextual Info: * ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SY10E193 SY100E193 SEMICONDUCTOR FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully compatible with industry standard 10KH,

54HST630

Abstract: DB10 DS3595-5
Contextual Info: 54HSC/T630 54HSC/T630 Radiation hard 16-Bit ParallelError Detection & Correction Replaces January 2000 version, DS3595-5.0 DS3595-5.1 July 2002 The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The

block diagram code hamming

Abstract: ot 112 generate the parity after shift register block SECDED E160 E193 MC10193 SY100E193 SY10E193 p4350
Contextual Info: * ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY S E M IC O N D U C T O R SY10E193 SY100E193 DESCRIPTION FEATURES • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register

Contextual Info: ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SY10E193 SY100E193 SEMICONDUCTOR DESCRIPTION FEATURES • Hamming code generation ■ Extended 100E V ee range of -4 .2 V to -5 .5 V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully com patible with industry standard 10KH,

MC10193

Abstract: E160 E193 SY100E193 SY101E193
Contextual Info: A ERROR DETECTION/ CORRECTIVE CIRCUIT SYN ERG Y e v in n F ic n 1 y 101E193 _ SEMICONDUCTOR J D E S C R IP T IO N FEATURES Hamming Code Generation. 8 - Bit Wide. Expandable for more width. Provides Parity Register. ESD Protection of 2000V.

49C460

Abstract: 7 bit hamming code 49C465 sd1623 XOR16 SD815
Contextual Info: APPLICATION NOTE AN-151 USING 32-BIT EDCS IN 8-BIT AND 16-BIT APPLICATIONS Integrated Device Technology, Inc. By Anupama Hegde INTRODUCTION The 49C460 and 49C465 are 32-bit error detection and correction EDC devices that use a modified Hamming code easily adaptable to 16 , 32 or 64-bit applications. 16-bit

block diagram code hamming

Abstract: SECDED 7 bit hamming code hamming code E160 E193 MC10193 SY100E193 SY10E193 generate the parity after shift register block
Contextual Info: *SYNERGY ERROR DETECTION/ CORRECTION CIRCUIT S E M IC O N D U C TO R FEATURES SY10E193 SY100E193 D E S C R IP T IO N I Hamming code generation i 8-bit wide Expandable for more width Provides parity register ESD protection of 2000V Fully compatible with Industry standard 10KH,

c1823.zip

Abstract: verilog code hamming an1823 flash hamming ecc 7 bit hamming code hamming code hamming code-error detection correction LP05 LP03 LP06
Contextual Info: AN1823 APPLICATION NOTE Error Correction Code in NAND Flash Memories This Application Note describes how to implement an Error Correction Code ECC , in ST NAND Flash memories, which can detect 2-bit errors and correct 1-bit errors per 256 Bytes. This Application Note should be downloaded with the c1823.zip file.