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    HALL-EFFECT-SENSOR UGN3506 Search Results

    HALL-EFFECT-SENSOR UGN3506 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK423G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK422G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK424G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK401G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E Datasheet
    TCK420G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet

    HALL-EFFECT-SENSOR UGN3506 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    UGN3507

    Abstract: UGN3506 ugn3508 UGN3501 27702A measure current toroid UGN3503 GAP2000 Hall-Effect-Sensor ugn3503 MAGNETIC HEAD impedance
    Contextual Info: Application Note 27702A* APPLICATIONS INFORMATION LINEAR HALL-EFFECT SENSOR ICS by Joe Gilbert and Ray Dewey LINEAR SENSOR ICS — FEATURES & BENEFITS Linear Hall-effect devices are immune to most environmental disturbances that may affect optical or mechanical devices, such as vibration, moisture, dirt or oil films,


    Original     		7702A* UGN3507 UGN3506 ugn3508 UGN3501 27702A measure current toroid UGN3503 GAP2000 Hall-Effect-Sensor ugn3503 MAGNETIC HEAD impedance PDF