H7 RF Search Results

LT 5224 diode

Abstract: lt 5224 Diode LT 5224 0PI3152 0PI3252 OPI3152 OPI3252
Contextual Info: OPTEK TECHNOLOGY INC ObE D | h7^flSÛ0 0000250 3 | 1987 Cost Saver Product! TRW for morB information! Optoelectronics Division T R W Electronic Com ponents Group # ÊXW W Ca|, Product Bulletin 5224 January 1985 ‘ Optically Coupled Isolators Types OPI3152, 0PI3252

SOLAR TRANSISTOR

Abstract: H773
Contextual Info: MwT-H7 32 GHz Medium Power/ High Gain AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns FEATURES 50 50 • 21.5 dBm POWER OUTPUT AT 12 GHz • EXCELLENT FOR HIGH GAIN AND MEDIUM POWER APPLICATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE

LT3973-3.3

Abstract: LT3971-3.3
Contextual Info: very low distortion mse • j m a a n H7 o n o ia n ISCC F re q u e n c y M ixers Models 1 " LEVEL 11S +17dBm LO, up to +14dB m RF T -74-09-01 TAK-3H ZAD-3SH ZFM-3H ZLW-3SH SCIENTIFIC/ MINI-CIRCUITS computer-automated performance data typical production unit /

tc-2b 94v-0

Abstract: pure sine wave inverter TC25SC mbrf 100 ct 125CC LF-H 14 S marking code ES3 UUU1 20H2 MBRF20H100CT
Contextual Info: % TAIW AN SEM ICONDUCTO R RoHS MBRF20H100CT - MBRF20H200CT Isolated 20.0 AMPS. Schottky Barrier Rectifiers ITO-220AB 105!H7: COMPLIANCE •A M iwixu: .1- 212.051 .ic cß .ss: VMX .Z !Z \% V . n Features “ ^ •?' ■i> •> ■t' ■t' •> ■y- P lastic mate ri al used ca rries U nde rwrite rs Labo ratory

ZTU1

Abstract: PD9321GF-3BA
Contextual Info: 30E D ELECTRONI CS INC 'ja* • t 4 H7 5 S 5 0030100 T ■ T-7 ¿Sí -’ 'à MOS INTEGRATED CIRCU IT ÎÊ â Ê Ë Ë Ë m ^PD9321 YC PROCESSING LSI FOR IDTV YCP DESCRIPTION The //PD9321 is a YC processing LSI (YCP) for Improved Definition TV (ID T V ). This LSI processes the luminance signal

CI 1115a

Abstract: 2SB1115 2SB1115A 2SD1615 SIN 002 T-1.0
Contextual Info: -D—S •S/—K NEC ^Y SiliconTransistors 2SB 1115,1115A 'J= l>h7 PNP xt°^ 2S B 1115, 1115A 1Ì W ^êâfOtg;i±Aiift <, K7-Î7*, m m 7 "'J v V lC h ] ^ 'i'M 9W T j b » , 3 1/^ #‘ofôitÎEc7>£ÿ\ & J: {/'FliSffl i '>ij=i> b^ 'J w—, mm 7 > 7 " -ft7 )frl

NEC 710

Abstract: DEV101
Contextual Info: k\fBm M ic r o w a v e T e c h n o l o g y MwT-H7 32 GHz Medium Power/High Gain AIGaAs/lnGaAs PHEMT |<-50 • • • • • ->| ^ -5 0 ->| +21.5 dBm OUTPUT POWER AT 12 GHz EXCELLENT FOR HIGH GAIN AND MEDIUM POWER APPLICATIONS 0.3 MICRON REFRACTORY METAL/GOLD GATE

JISC0051

Abstract: tlf25 ru 100024 irf 418
Contextual Info: * 1 -25"C~+85"C 2 .« # ia * » 6 H SMD< > 9 0 9 04/05/06? < y SM DO ? 08?^/ 3 t> t-K CM04RC K JlBU05MC —25— 1-105‘C n > > h7>^ BU05MC S B * * ! H C <t 4 j a * ± » í - t ü „ —40‘C ~ + 8 5 ’C □ í > í — K 513 — •? u -< Jl- • A Jl- >

MR 4710 IC

Abstract: KL SN 102 lcd MR 4710 ks 4290 317 jrc SAA 1350 LM 1405 1470 LM jrc 317 IC JRC 2910
Contextual Info: NJU6679 128 = J ^ E > x If V •m b "? 1 3 2 - iz ^ 'y 3? L C D æ > h /< ■ n NJU6679 i t . 128^> x 132-ttf* m ? h7?7’ LCDT 7 ^ * t t 0 COLCDh* 7ÏA* lis 25, 344tf îih 7 Â^f* -$RAM. CPU<i>*-7i<iJl[I&, i'A - V i i t f f P T ? 1 8 j £ £ f r W ifrj/W

AN345V

Contextual Info: AN345V AN345V Video Signal P rocessin g Circuit • HI ^ / D e s c r i p t i o n AN 345 V lì , 7 - T i- b' H T 1x1+ ? n. iR ÎIH l^jaaiB lK A 'A N 345 V l ì t i to ■ 4$ S k / F e a t u re s • AN 345V 3 ^ Ò ^ T , AN 345 V l S t i R y h7 X h T + -r zi >

S3V77

Abstract: 200W TRANSISTOR AUDIO AMPLIFIER 2SD610 2SB630 300W TRANSISTOR AUDIO AMPLIFIER 300w amplifier Q100 200w audio power amplifier 251C 200w silicon audio power transistor
Contextual Info: 2SD 610/2SB630 2SD610/2SB630 N P N /P N P h7 'J a v N P N /P N P S IL IC O N TRIPLE D IFFU S ED T R A N S IS T O R Frequency Pow er A m p lifie r ft ^ /F E A T U R E S •^ ffl^ /2 0 0 W ~ 3 0 0 W i« ^ X r U * '< V - 7 V 7"CO K 5 < '<&t I X M M ° Suitable for driver of 200 to 300 watts audio amplifier.

SAWTEK856561

Abstract: 32K768 PT9250 GPS RECEIVER L10 TA4020FT 850C GPIO14 NMEA-0183 XC6215P122 XC6215P12
Contextual Info: PT9250 48-channel Single Chip GPS Receiver DESCRIPTION The PT9250 is an advanced single chip GPS receiver to integrate baseband, RF and flash memory into the 7mm x 10mm package making for an extremely compact design. This advanced solution offers best-in-class acquisition & tracking sensitivity, TTFF

Contextual Info: Ω ' '7! $ ! 0 ! $$: ' 0 7! 3;-,$/ 7! - .-+/.;<= / 5/>+ .3< .333 $ 0 '?! ! 1- =0 ! 0'0 7?' 0! RF_35/12.04/3.0 1 74 !' ! && 1 2.3666& 1 4 ' ' !$ 10 10 5 ! "#$ % & # /,* 3- !$ ! # $0 4 & 7 ? #' 7<$!&.& 3;@$< A $!0' !"' 5' 0 6! A ! ' A B&& ?0 CD 5' 0 6! A !

GPS chip

Abstract: GPS oncore ut gps architecture Motorola b4 64-pin BGA motorola MG200 Gps circuit diagram 12-Channel Mixer oncore
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Oncore GPS Chip Mixed Mode RF and Digital Monolithic GPS Sensor MG2000 The Oncore GPS Chip integrated circuit was specifically designed for low power, cost effective host-based GPS applications. Measuring only 8x8 mm, the Oncore GPS Chip monolithic GPS sensor design includes a fully

Contextual Info: Ω (7" % " 0 " %%:!( 0 7" ! 3;.- % ! 0 7" ! . /.,/;<= 5>, /3< /333 % ! 9 =0! " 0(0 7?( 0! " RF_35/12.04/3.0 ! ! 0! ! ! 0! 1 74 "( !" '' 1 2/3. 666' ?" 10 10 5 ! " #$% & ' $ -+ 3. " ! ! % " $ %0 4 ' 7 $( 7<%"' ' - @%< A 5( 0 6" ! A 5( 0 6" ! A ( ' *+,-.-+ /502

Contextual Info: HVM14SR Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator HITACHI ADE-208-084B Z Preliminary, Rev. 2 May. 1993 Features • Low forward resistance. (rf = 7.0i2max) • Low capacitance. (C = 0.25pFtyp) • MPAK package is suitable for high density surface mounting and high speed assembly.

DIODE H7

Abstract: Hitachi DSA002712
Contextual Info: HVM14SR Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator ADE-208-084B Z Preliminary, Rev. 2 May. 1993 Features • Low forward resistance. (rf = 7.0Ωmax) • Low capacitance. (C = 0.25pFtyp) • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: 06[RG  5/# #FCRVGPWCVQT Ÿ : G% 0/5  '& WR  0+] (GCVWTGU /CZKOWO 4CVKPIU 2SHUDWLQJ 7HPSHUDWXUH ƒ& WR ƒ& 6WRUDJH 7HPSHUDWXUH ƒ& WR ƒ& 3HUPDQHQW GDPDJH PD\ RFFXU LI DQ\ RI WKHVH OLPLWV DUH H[FHHGHG 1WVNKPG &TCYKPI ‡ :LGHEDQG '& WR  0+]

Contextual Info: 06[RG  5/# #FCRVGPWCVQT Ÿ : G% 0/5  '& WR  0+] (GCVWTGU /CZKOWO 4CVKPIU 2SHUDWLQJ 7HPSHUDWXUH ƒ& WR ƒ& 6WRUDJH 7HPSHUDWXUH ƒ& WR ƒ& 3HUPDQHQW GDPDJH PD\ RFFXU LI DQ\ RI WKHVH OLPLWV DUH H[FHHGHG 1WVNKPG &TCYKPI ‡ :LGHEDQG '& WR  0+]

H7 RF

Contextual Info: %QPPGEVQTK\GF #ORNKſGT Ÿ <:'  0+] WR  *+] GCVWTGU ‡ ‡ ‡ ‡ :LGH EDQGZLGWK  0+] WR  *+] /RZ QRLVH ÀJXUH  G% W\S 2XWSXW SRZHU XS WR  G%P W\S 3URWHFWHG E\ 86 SDWHQW  &$6( 67</( *& #RRNKECVKQPU ‡ ‡ ‡ ‡ ‡ ‡ &HOOXODU

wy smd transistor

Abstract: transistor k626 GHW Connectors g1n transistor TRANSISTOR f5j transistor smd 3f13 smd transistor EY transistor smd 3fh smd transistor fh f5j transistor
Contextual Info: CCS2930 Product Information March 1996 1 of 2 2.4 to 2.5 GHz 1 Watt Amplifier Chip Set Features ❏ High Gain ≈ 30 dB ❏ +30 dBm Output Power @ 5 Volts ❏ 33% Efficient ❏ Small Size Functional Block Diagram CMM2301 CFK2062 Applications ❏ ISM Band Base Stations

2SA1807

Abstract: AO2000 600V PNP 230-Z 2SA1807F5 5A SF SC 30
Contextual Info: h 7 > v7> £ /Transistors 2SA1807F5 2SA 1807F5 PNP y U ^ > h Triple Diffused Planar PNP Silicon Transistor High Voltage Switching For Telephone Switching Power Suppliers • ftft • rfi&ia/Dimenslons (U nit: mm) 1) ¡ 5 H E T £ 3 o B V ceo = -600 V 2)

RF6026EA

Abstract: polar modulator fractional N PLL rf6026 GMSK modulator GSM Transceiver dcr gmsk transceiver DAC CORDIC SSB Modulator RF602
Contextual Info: RF6026EA/GA Quad-Band GSM/GPRS/E DGE Transceiver Module RF6026EA/GA Proposed QUAD-BAND GSM/GPRS/EDGE TRANSCEIVER MODULE RX EN SSB SDI SCLK LDTO E2 F3 C2 G4 F4 F5 G3 RX1900 A6 SAW / LNA Matching General Purpose Outputs Digital LO LNA4 RXEN Features „ Frac-N Digital GMSK Modulator

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TPM1919-40 TECHNICAL DATA FEATURES : • HIGH POWER ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE PidB = 46.0 dBm at 1.9 GHz ■ HIGH GAIN GidB = 13 dB at 1.9 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C