H7 RF Search Results

Contextual Info: REV. B DCO COIL: 300825 9 25 C CUSTOMER DATA 7 8 OHMS ± 1 0 % NOMINAL 12 VOLTAGE 6 . 6 V DC M A X . MU S T O P F R A T F X29 D3 VDC SHEET y j>Q2 D1 " i C1 C3 i " ] J> B3 ^ MUST VDC 3.3 RF I F A S F MAX. VDC 0.75 A3 Í B LU E B E A D 70 H7 TO 3000 H7 g A2

Contextual Info: Descriptive Index Accessories G1 - G5 Cross Reference Part Number to Page Index Military P/N to Eaton P/N Test Requirements per MIL Specs Glossary of Terms 5 H2 - H7 H8 - H9 H10 - H12 Capabilities 6-7 EMI/RFI Shielded Pushbutton Switches B14 - B19 Environmentally Sealed Switches

GI 9528

Abstract: P 1504 EDG 3242B 1/diode gi 9528 B8533 S6AOO S4 6ba F4 7E S8162 L9509
Contextual Info: DSP56001 Electrical Characteristics MOTOROLA 20 DSP56001 DSP56001 Electrical Characteristics HREQ OUTPUT RXH Read , HEN (INPUT) \ ) U— 47\ RXl Read RXM Read I ^ -0 )— I“ HA2-HA0 (INPUT) LA HRAV (INPUT) ¡36 H0-H7 (OUTPUT) 0H X Address Valid Address

LT 5224 diode

Abstract: lt 5224 Diode LT 5224 0PI3152 0PI3252 OPI3152 OPI3252
Contextual Info: OPTEK TECHNOLOGY INC ObE D | h7^flSÛ0 0000250 3 | 1987 Cost Saver Product! TRW for morB information! Optoelectronics Division T R W Electronic Com ponents Group # ÊXW W Ca|, Product Bulletin 5224 January 1985 ‘ Optically Coupled Isolators Types OPI3152, 0PI3252

CRB 1.0 m

Abstract: 2SC3838K CRB 1.0M
Contextual Info: h7 > 5 /'Transistors 2SC3838Kl 2SC4083 2SC3838K 2SC4083 i t N P N y'J^> Epitaxial Planar NPN Silicon Transistors ¡SJSi&*lilliffl/RF Amplifier • ¿'t-ffi'+S±[2l/Dimensions Unit: mm 1) fT= 3 .2 G H z (Typ.) <m 2) c c - r b b ' 2SC3838K m. 2SC4083 2 .9 ± 0 .2

Contextual Info: PRELIMINARY V73CBG04168RA HIGH PERFORMANCE 4Gbit DDR3L SDRAM 8 BANKS X 32Mbit X 16 - G6 - H7 - I9 - J11 - K13 DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 Clock Cycle Time tCK5, CWL=5 3.0ns 3.0ns 3.0ns 3.0ns 3.0ns Clock Cycle Time ( tCK6, CWL=5 ) 2.5ns

G0240

Contextual Info: PRELIMINARY V73CAG02808RA HIGH PERFORMANCE 2Gbit DDR3 SDRAM 8 BANKS X 32Mbit X 8 - G6 - H7 - I9 - J11 DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 Clock Cycle Time tCK5, CWL=5 3.0ns 3.0ns 3.0ns 3.0ns Clock Cycle Time ( tCK6, CWL=5 ) 2.5ns 2.5ns 2.5 ns 2.5 ns

h770

Abstract: H773
Contextual Info: MwT-H7 28 GHz Medium Power/ High Gain AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns FEATURES 50 50 • 21.5 dBm POWER OUTPUT AT 12 GHz • EXCELLENT FOR HIGH GAIN AND MEDIUM POWER APPLICATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE

SOLAR TRANSISTOR

Abstract: H773
Contextual Info: MwT-H7 32 GHz Medium Power/ High Gain AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns FEATURES 50 50 • 21.5 dBm POWER OUTPUT AT 12 GHz • EXCELLENT FOR HIGH GAIN AND MEDIUM POWER APPLICATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE

iepe circuit

Abstract: e1432a calibration E1432 E8400A E1432A EN55001 digital tachometer types msa parallel module 1998 iepe microphone E1433
Contextual Info: PDFINFO H7 1 9 3 - 0 1 16-Channel 51.2 kSa/sec Digitizer Plus DSP HP E1432A Technical Specifications ● ● ● ● ● ● On-board DSP improves total system performance Built-in signal conditioning simplifies tests and reduces cost Sample rates from 51.2 kHz to 25.6 Hz per

DTC144WKA ROHM BY SMT

Abstract: DTC144 DTC144WU dtC144 transistor
Contextual Info: h 7 > V \X £ /'Transistors DTC144 WE/DTC144 WUA/DTC144 WKA DTC144WE/DTC144WU A/DTC144WKA Digital Transistors Includes Resistors h7>y Z ' f y ^-/Transistor Switch fl.Jg-^-;±EÜ]/Dimensions (Unit : mm) • w * 1) A 'i'77 :xffl<7)iêjjî;£p*3jK LT i'-S/c

LT3973-3.3

Abstract: LT3971-3.3
Contextual Info: very low distortion mse • j m a a n H7 o n o ia n ISCC F re q u e n c y M ixers Models 1 " LEVEL 11S +17dBm LO, up to +14dB m RF T -74-09-01 TAK-3H ZAD-3SH ZFM-3H ZLW-3SH SCIENTIFIC/ MINI-CIRCUITS computer-automated performance data typical production unit /

H7 RF

Contextual Info: h7 y UMW11N/FMW 11 £ /Transistors 7 a 7 / ^ - î - ^ K h"7 > V > ^ /D iia l Mini-Mold Transistor Epitaxial Planar NPN Silicon Transistor liiJià&JStiffl/RF Amplifier ' • W ft 1 U M T SC-70), SM T (SC-59) 2 m<r> f- v > V X 2 tfâ — if A 0 / Dimensions (Unit : mm)

Contextual Info: PRELIMINARY V73CBG01 808/168 RB HIGH PERFORMANCE 1Gbit DDR3L SDRAM 8 BANKS X 16Mbit X 8 8 BANKS X 8Mbit X 16 - G6 - H7 - I9 - J11 - K13 DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 Clock Cycle Time ( tCK5, CWL=5 ) 3.0ns 3.0ns 3.0ns 3.0ns 3.0ns Clock Cycle Time ( tCK6, CWL=5 )

tc-2b 94v-0

Abstract: pure sine wave inverter TC25SC mbrf 100 ct 125CC LF-H 14 S marking code ES3 UUU1 20H2 MBRF20H100CT
Contextual Info: % TAIW AN SEM ICONDUCTO R RoHS MBRF20H100CT - MBRF20H200CT Isolated 20.0 AMPS. Schottky Barrier Rectifiers ITO-220AB 105!H7: COMPLIANCE •A M iwixu: .1- 212.051 .ic cß .ss: VMX .Z !Z \% V . n Features “ ^ •?' ■i> •> ■t' ■t' •> ■y- P lastic mate ri al used ca rries U nde rwrite rs Labo ratory

Contextual Info: 2S A 1037K /2S A 1576 h "7 > ' ¿ 7 * $ / T ransistors x t: £+'> T}\rf\s—yv&7>-i 2 S A 1 0 3 7 K h7 5 - ï - A K P N P -> U = —Âx/J ' i ï ,^ l # li iffl/G eneral Small Signal Amp. 2 S A 1 5 7 6 Epitaxial Planar Super/Ultra Mini-M old PNP Silicon Transistors

2SD2395

Abstract: 2sb1566
Contextual Info: 2SB1566 h ~7 y V Z- $ /Transistors 2 S B 1 5 6 X k ° $ * ' > 7 ^ 7 I s - P N P y ij 6 h7>yz$ Epitaxial Planar PNP Silicon Transistor • Jilj/£11;fritllfi£ ]/L o w Freq. Power Amp. • 1 rfjiEO/Dim ensions U n it: mm) VC E(sat) io n :;:; V c E ( s a t ) = - 0 . 3 V (T y p .)

Contextual Info: REV. OCO 170668 COIl: 9 CUSTOMER 0 A T A S H E E T 25°C 5 0 0 0 OHMS - i 1 0 % RFSKTAN fF NOMINAL VOITAGF 6.0 TlADC m ust 2.8 mAOC operatt BLUE BEAD 9 t m ust a ENVIRONMENT: t 1— - J IV H7 NOTFS- f c v w ' P H? jj g 's -65 6 MS °r nilRAT ION +125 to RELEASE

C1809N

Abstract: 1809N
Contextual Info: h7 > ^ / T ransistors 2SC1809 2SC1809 m2*'>7Ji'7ls-J-BNPN r ^ S ^ ia 'lif f l/R F Amplifier Epitaxial Planar NPN Silicon Transistor • • tt* f t f î rfjig l/D im e n sio n s Unit : mm 1) fT= 5 0 0 M H z Typ.(at 1 m A ) £ lÜ l'0 2) C ob= 1 .4 p F Typ. (at 6V)

ZTU1

Abstract: PD9321GF-3BA
Contextual Info: 30E D ELECTRONI CS INC 'ja* • t 4 H7 5 S 5 0030100 T ■ T-7 ¿Sí -’ 'à MOS INTEGRATED CIRCU IT ÎÊ â Ê Ë Ë Ë m ^PD9321 YC PROCESSING LSI FOR IDTV YCP DESCRIPTION The //PD9321 is a YC processing LSI (YCP) for Improved Definition TV (ID T V ). This LSI processes the luminance signal

4558

Abstract: fc 4558 BA6394FP
Contextual Info: BA6394FP B A 6394FP Power Driver for CD Players • fl-M '+ ii Hi/Dimensions Unit : mm BA6394FP(3^ CDy i / - t î ) 7 ? f U - ? , i —? SE ]ffl4chA U H7* U -y v ^ î t B T L K =? -f '•'"t’ To ;Affl * ^ T > 7* £ * t — Ì> írííffl L T íi LX l'% >tzsb^

CI 1115a

Abstract: 2SB1115 2SB1115A 2SD1615 SIN 002 T-1.0
Contextual Info: -D—S •S/—K NEC ^Y SiliconTransistors 2SB 1115,1115A 'J= l>h7 PNP xt°^ 2S B 1115, 1115A 1Ì W ^êâfOtg;i±Aiift <, K7-Î7*, m m 7 "'J v V lC h ] ^ 'i'M 9W T j b » , 3 1/^ #‘ofôitÎEc7>£ÿ\ & J: {/'FliSffl i '>ij=i> b^ 'J w—, mm 7 > 7 " -ft7 )frl

2SC4573

Contextual Info: hZ7> y Z £ /Transistors 2SC4573 x 2SC4573 * > rJ i'y 'l'-i-M NPN >';=]> > V7, $ h7 Epitaxial Planar NPN Silicon Transistor Darlington Freq. Power Amp. 1) □ U • 'S '— X Hfl C 6 0 V CO 7 ±-•#■1*- x • J f i'iiiE l/ D im e n s io n s (U n it: mm)

NEC 710

Abstract: DEV101
Contextual Info: k\fBm M ic r o w a v e T e c h n o l o g y MwT-H7 32 GHz Medium Power/High Gain AIGaAs/lnGaAs PHEMT |<-50 • • • • • ->| ^ -5 0 ->| +21.5 dBm OUTPUT POWER AT 12 GHz EXCELLENT FOR HIGH GAIN AND MEDIUM POWER APPLICATIONS 0.3 MICRON REFRACTORY METAL/GOLD GATE