H5N2522LS Search Results

H5N2522LS Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
H5N2522LS		Renesas Technology	MOSFET, Switching; VDSS (V): 250; ID (A): 20; Pch : -; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1300; toff ( us) typ: -; Package: LDPAK (S)- (1)	Original	PDF	71.85KB	4
H5N2522LSTL-E		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 20A LDPAK	Original	PDF		7

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Renesas Electronics Corporation


Renesas Electronics Corporation H5N2522LSTL-E MOSFET N-CH 250V 20A 4LDPAK
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H5N2522LS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
H5N2522LS Abstract: H5N2522LSTL-E Contextual Info: Preliminary Datasheet H5N2522LS R07DS0057EJ0200 Previous: REJ03G1667-0100 Rev.2.00 Jul 23, 2010 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.14  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Low leakage current	Original	H5N2522LS R07DS0057EJ0200 REJ03G1667-0100) PRSS0004AE-B dissipatio9044 H5N2522LS H5N2522LSTL-E	PDF
Contextual Info: Preliminary Datasheet H5N2522LS R07DS0057EJ0200 Previous: REJ03G1667-0100 Rev.2.00 Jul 23, 2010 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.14  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Low leakage current	Original	H5N2522LS R07DS0057EJ0200 REJ03G1667-0100) PRSS0004AE-B	PDF
H5N2522LS Abstract: H5N2522LSTL-E Contextual Info: H5N2522LS Silicon N Channel MOS FET High Speed Power Switching REJ03G1667-0100 Rev.1.00 Apr 23, 2008 Features • • • • Low on-resistance Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0004AE-B	Original	H5N2522LS REJ03G1667-0100 PRSS0004AE-B H5N2522LS H5N2522LSTL-E	PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
Hdd spindle motor Abstract: HAT2256R HAT3038 HAT3019R HAT1132R HAT2276R HAT3037R polygon mirror polygon mirror motor RQK0603DQA Contextual Info: April 2010 Renesas Electronics Power MOSFETs for Small Motor Drive Features Low ON resistance Low voltage drive 4V Small package Built-in high-speed diode Merits Low loss, High efficiency Available direct drive from logic IC and reduction of the number of any parts	Original	O-220CFM H5N5004PL H5N5005PL RJL5012DPP O-220FN RJL5013DPP RJL5014DPP RJL5014DPK Hdd spindle motor HAT2256R HAT3038 HAT3019R HAT1132R HAT2276R HAT3037R polygon mirror polygon mirror motor RQK0603DQA	PDF