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TRANSISTOR CW 7805

Abstract: AN3789 SAC305 laser soldering CELSTRAN CW 7805 MRF6V2300N pa66 fr PA66-GF60 sac305 thermal conductive 270WB
Contextual Info: Freescale Semiconductor Application Note AN3789 Rev. 0, 3/2009 Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages By: Mahesh Shah, Richard Rowan, Lu Li, Quan Li, Eddie Mares, and Leonard Pelletier INTRODUCTION This application note provides Freescale Semiconductor

Contextual Info: WT-193NB5-K988 Top Mount Chip LED 0603 Product Specifications Specification Iv Material Quantity 11.25-45 mcd O @mA/ Ta= 25 ;Tolerance: + 10% λD 465-480nm O @5mA/ Ta= 25 C;Tolerance: + 0.5nm Vf 2.55-3.15V O @5mA/ Ta= 25 C ;Tolerance: + 0.05V Ir < 100 µA @ VR = 5 V

Contextual Info: WT-193NB5 Top Mount Chip LED 0603 Product Specifications Specification Iv Material Quantity 11.25-45 mcd O @mA/ Ta= 25 ;Tolerance: + 10% 465-480nm λD O @5mA/ Ta= 25 C;Tolerance: + 0.5nm Vf 2.55-3.15V O @5mA/ Ta= 25 C ;Tolerance: + 0.05V Ir < 100 µA @ VR = 5 V

Contextual Info: WT-193NG5-K929 Special Color - InGaN Green Product Specification Specification Iv Material Quantity Q: 72-112.5 mcd R:12.5-180 mcd O @5mA/ Ta= 25 C Tolerance±10% 515-535 nm lambda λD O @5mA/ Ta= 25 C Tolerance:±0.5nm Vf 2.55-3.15 V/0.1V/bin @5mA Tolerance:±0.05V

Contextual Info: WT-193NG5 Special Color - InGaN Green Product Specification Specification Iv Material Quantity Q: 72-112.5 mcd R:12.5-180 mcd O @5mA/ Ta= 25 C Tolerance±10% 515-535 nm lambda λD O @5mA/ Ta= 25 C Tolerance:±0.5nm Vf 2.55-3.15 V/0.1V/bin @5mA Tolerance:±0.05V

Contextual Info: WT-F199BP5-K918 0603 1608 White Product Specification Specification Iv Material Quantity 90~285mcd O @5mA/ Ta= 25 C Tolerance: + 10% lambda(λD) Please refer to page 6 & 7 O @5mA/ Ta= 25 C Vf 2.65-3.15V O @5mA/ Ta= 25 C Tolerance: + 0.05V Ir < 100 µA @ VR = 5 V

Contextual Info: WT-F199BP5 0603 1608 White Product Specification Specification Iv Material Quantity 90~285mcd O @5mA/ Ta= 25 C Tolerance: + 10% lambda(λD) Please refer to page 6 & 7 O @5mA/ Ta= 25 C Vf 2.65-3.15V O @5mA/ Ta= 25 C Tolerance: + 0.05V Ir < 100 µA @ VR = 5 V

Contextual Info: WT-E122BP5 0603 Top Mount Chip LED Product Specifications Specification Iv Material Quantity Q:71.5-112.5 mcd R:112.5-180.0mcd O @5mA/ Ta= 25 ;Tolerance: + 10% λD Refer to page 6 O @5mA/ Ta= 25 C;Tolerance: + 0.1% Vf 2.55-3.15V O @5mA/ Ta= 25 C ;Tolerance: + 0.05V

Contextual Info: WT-122BP5 0603 Top Mount Chip LED Product Specifications Specification Iv Material Quantity Q : 71.5-112.5 mcd R : 112.5-180.0 mcd O @5mA/ Ta= 25 ;Tolerance: + 10% Chromaticity Refer to page 6 Coordinate @5mA/ Ta= 25 C;Tolerance: + 0.1% Vf 2.55-3.15V/0.1V Bin

Contextual Info: HEWLETT-PACKARD/ CMPNTS 3 4 E 3> • 4 4 4 7 S Ô 4 GaDflOl? 7 H H P A Whp% H E W LE TT mL'HM PACKARD T - S i - 15 406 DPI LED Optical Printhead Technical Data HEXP-RT00 Features Applications • High Optical Pow er and Efficiency • Electronically Trimmed

Contextual Info: WT-2G3USD5/NG5 Top Mountable ChipLED Product Specification Specification Iv Material Quantity USD5: 28.5-71.5 mcd NG5: 45-112.5 mcd O @5mA/ Ta= 25 C Tolerance: + 10% lambda λD USD5: 615-635 nm O @5mA/ Ta= 25 C; Tolerance; + 0.5nm NG5:515-540 nm O @5mA/ Ta= 25 C; Tolerance; + 0.1%

Contextual Info: WT-F196NB5 0603 1608 Special Color - InGaN Blue Product Specification Specification Iv Material Quantity M: 18-28.5 mcd N: 28.5-45 mcd O @5mA/ Ta= 25 C Tolerance±10% lambda(λD) B:465-470 nm C: 470-475 nm O @5mA/ Ta= 25 C Tolerance±0.5nm Vf 2.65-3.15V(0.1V/ Bin)

Contextual Info: WT-2G3USD/NG Top Mountable ChipLED Product Specification Specification Iv Material Quantity USD: 45-112.5 mcd NG: 180-320 mcd O @20mA/ Ta= 25 C Tolerance: + 10% USD: 615-635 nm lambda λD O @20mA/ Ta= 25 C; Tolerance; + 0.5nm NG:515-530 nm O @20mA/ Ta= 25 C; Tolerance; + 0.1%

Contextual Info: WT-193BP5 1608 White Product Specification Specification Iv Material Quantity 45-285mcd O @5mA/ Ta= 25 C Tolerance: + 10% Chromaticity Refer to page 6 Coordinates @5mA/ Ta= 25 C O Tolerance: + 0.5nm Vf 2.75-3.25V O @5mA/ Ta= 25 C Tolerance: + 0.05V Ir < 100 µA @ VR = 5 V

Contextual Info: 54ACT11241, 74ACT11241 OCTAL BUFFERS/LINE DRIVERS WITH 3-STATE OUTPUTS SCAS011B - D2957, JULY 1987 - REVISED APRIL 1993 * 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers 54ACT11241 . . . JT PACKAGE 74ACT11241 . . . DB, DW OR NT PACKAGE 1

Contextual Info: DS1589/DS1593 DALLAS SEMICONDUCTOR FEATURES D S 1 5 8 9 /D S 1 5 9 3 Serialized Real Time Clocks PIN ASSIGNMENT Incorporates industry standard DS1287 PC clock plus enhanced features: • 64-bit Silicon serial number • Power control circuitry supports system power on

4N24 opto

Abstract: 3041 OPTO B1056
Contextual Info: MOTOROLA SC {DI ODE S/ OP TO} DE |h3t,72SS GD7747D 3 Order this data sheet by 4N22A/D MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA 4N22,A 4N23,A 4N24,A Hermetic O ptoisolator T h e 4N 22,A , 4 N 2 3 ,A and 4 N 2 4 ,A are J E D E C registered optically co u p led iso la to rs each

ED 78

Contextual Info: SSI 34P570 s ilic o n M k m 2-Channel Floppy Disk Read/Write Device s July, 1990 DESCRIPTION FEATURES The SSI 34P570 is an integrated circuit which performs the functions of generating write signals, amplifying and processing read signals required for a double­

V06T

Abstract: MP7610BS
Contextual Info: MP7610 M Micro Power Systems Octal 14-Bit DAC A rray Digital-to-Ana!og Converter with Output Amplifier and Serial Data/Address iP Control Logic />'• i'jm\ FEATURES ; <*r~ (' siili APPLICATIONS Eight Independent 14-Bit DACs with Output Amplifiers Low Power 320 mW (typ.

Contextual Info: MP7612 T E X A Octal 12-Bit DAC Array D/A Converter with Output Amplifier and Serial Data/Address |iP Control Logic R FEATURES APPLICATIONS • Eight Independent 12-Bit DACs with Output Amplifiers • Low Power 320 mW (typ. • Serial Digital Data and Address Port (3-Wire

26-PIN

Abstract: ZIP20-P-400
Contextual Info: O K I Semiconductor MSM5 1 4410B/BL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WRITE PER BIT DESCRIPTION T he M SM 514410B / B L is a n e w generation d yn am ic R A M organized as 1,048,576-word x 4-bit. T he technology used to fabricate the M SM 5 1 4 4 1 0 B/BL is O K I's C M O S silico n gate process technology.

bPA20

Contextual Info: •HYUNDAI H Y 5 1 V 1 7 1 0 0 A S e r ie s 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17100Ais the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V17100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

0-51CYCLE

Abstract: fct88915
Contextual Info: LOW SKEW PLL-BASED CMOS CLOCK DRIVER IDT54/74FCT88915 55/70/100/133 PRELIMINARY Integrated Device Technology, Inc. FEATURES: • • • • • • • • • • 0.5 MICRON CMOS Technology Input frequency range: 2.5MHz - f2Q Max. spec Max. output frequency: 133MHz

Contextual Info: I Ordering number: EN 3952B~ Monolithic Linear IC Illllllllllllll LA7390N SAiYO VHS-format VCR Video Signal Processor Overview Package Dimensions unit: mm T he L A 7390N is a single-chip video signal processing IC th a t is com patible w ith th ree systems.