H25 ABSOLUTE Search Results

Contextual Info: 1,5 SMCJ 160 . 1,5 SMCJ 180CA ,* @ 5 ;   .   Absolute Maximum Ratings Symbol Conditions Surface mount diode Unidirectional and bidirectional Transient Voltage Suppressor diodes Values Units 25 : 5 : 2 * 5 G6: 2 G6:   -   .   

Contextual Info: 1,5 SMCJ 160 . 1,5 SMCJ 180CA ,* @ 5 ;   .   Absolute Maximum Ratings Symbol Conditions Surface mount diode Unidirectional and bidirectional Transient Voltage Suppressor diodes Values Units 25 : 5 : 2 * 5 G6: 2 G6:   -   .   

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: 1,5 SMCJ 6,5 . 1,5 SMCJ 150CA ,* @ 5 ;   .   Absolute Maximum Ratings Symbol Conditions Surface mount diode Unidirectional and bidirectional Transient Voltage Suppressor diodes      !"#$ %  &    '  )  )*)+   

smcj

Abstract: BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
Contextual Info: 1,5 SMCJ 6,5 . 1,5 SMCJ 150CA ,* @ 5 ;   .   Absolute Maximum Ratings Symbol Conditions Surface mount diode Unidirectional and bidirectional Transient Voltage Suppressor diodes Maximum Stand-off voltage: 6,5 . 150 V Features       

Contextual Info: Qe.T.s.c.y cScmL-donduckoi ZPioducti, Unc, TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3390A absolute maximum ratings: (25°C) tunics otherwise ipmraM. Collector lo Emitter Emitter to Base

54418P

Abstract: TRANSISTOR SE 135
Contextual Info: M ITSU B ISH I BIPOLAR DIGITAL ICs M 54418P TAPE SELEC TO R DESCRIPTION The M54418P is a semiconductor integrated circuit consist­ PIN CONFIGURATION TOP VIEW ing of an automatic tape selector capable of switching a re­ BIAS IN PU T- * [ T cording equalizer and a bias voltage control.

cl25C

Abstract: 251C BC858B BC858BW SST6838 SST6839 T116
Contextual Info: Transistors I SST6839 PNP General Purpose Transistor SST6839 • E x te r n a l dim ensions Units : m m •F e a tu r e s 1) B V ceo< — 4 0 V ( lc = — 1m A) SST6839 2 ) Complements the SST6838. 1 .9 + 0 .2 •P a c k a g e , marking, and packaging specifications

JH23

Abstract: LTL42KE6N
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only Features * High luminous intensity output. * Popular T-1 diameter package. * Selected minimum intensities. * Wide viewing angle. * General purpose leads. * Reliable and rugged. Package Dimensions Part No.

Contextual Info: MITSUBISHI RF POWER MODULE M67724 824~849MHz, 7.2V, 1.6W, FM PORTABLE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm © PIN : © P in : RF INPUT @ VCC 1 : 1st. DC SUPPLY @VCC 2 : 2nd. DC SUPPLY @VCC3 : 3rd. DC SUPPLY PO : RF O UTPUT © G N D : FIN

Contextual Info: N J U 7 2 0 2 3-TERMINAL POSITIVE VOLTAGE Seri es P R E L I M I NARY REGULATOR • GENERAL DESCRIPTION The NJU7202 series is a 100mA Output 3-terminaI positive voltage regulator which contains internal accurate voltage reference, error amplifier, control transistor outputvoltage setting resistor and shotdown prevention circuit.

Contextual Info: m 1048 GaAs INFRARED EMITTING DIODE GENERAL DESCRIPTION OUTLINE typ. Unit: nini The NJL1104B is a high efficient infrared emitting diode with a glass lens. FEATURES • Narrow beam angle • High density luminous flux • High speed response APPLICATIONS

48-New

Abstract: transistor t0 92 70V 3 terminal voltage regulator NJU7202 NJU7202L NJU7202U
Contextual Info: N J U 7 2 0 2 3-TERM IN AL POSITIVE VOLTAGE ! GENERAL DESCRIPTION The NJU7202 series is a 100mA Output 3-terminaI positive voltage regulator which contains internal accurate voltage reference, error amplifier, control transistor outputvoltage setting resistor and shotdown prevention circuit.

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

Contextual Info: _ COM’L: -25/33 El MIL: -25 Am29CPL151H-25/33 Advanced Micro Devices CMOS 64-Word Field-Programmable Controller FPC DISTINCTIVE CHARACTERISTICS • Implements complex state machines Up to 33-MHz maximum frequency ■ High-speed, low-power CMOS EPROM

Contextual Info: COM’L: -25/33 il MIL: -25 Am29CPL151H-25/33 Advanced Micro Devices CMOS 64-Word Field-Programmable Controller FPC DISTINCTIVE CHARACTERISTICS • Implements complex state machines Up to 33-MHz maximum frequency ■ High-speed, low-power CMOS EPROM technology

74HCT2G125DP

Abstract: 74HC125 74HC2G125 74HC2G125DC 74HC2G125DP 74HCT125 74HCT2G125 74HCT2G125DC JESD22-A114E VSSOP8
Contextual Info: 74HC2G125; 74HCT2G125 Dual buffer/line driver; 3-state Rev. 04 — 4 July 2008 Product data sheet 1. General description The 74HC2G125; 74HCT2G125 is a high-speed, Si-gate CMOS device. The 74HC2G125; 74HCT2G125 provides two non-inverting buffer/line drivers with 3-state

njm2119

Abstract: HJM2119D NJNI2119
Contextual Info: DUAL SINGLE-SUPPLY OPERATIONAL AMPLIFIER NJNI2119 N JM 2119 is a ultra-low input offset voltage and bias current, low drift and single supply dual operational amplifier. NJM21L9 is suitable for a high accurated instrumental amplifier and sensor amplifier.

S10SC3M

Abstract: S15SC3M S30SC3M d10sc3m S25SC6M S10SC
Contextual Info: ^ -iT T -h RECTIFIER DIODES SHINDENGEM. ELELCTRICJ1FG t B a r r ie r E3 m V rm lo [V ] [A ] m To [•c ] 60 4 113 Type No. D4SC6M ' D10SC3M / 3M R , 4M / 4M R 6M > S10SC3M 3MR ^ *• , 4M -• 4MR„ S10SC3 40 Tj Vf max Pc] —40— H 25 Ifsm Tstg [A ] 60

Contextual Info: HA22012 GaAs MMIC Low N oise Amplifier for Micro Wave Application HITACHI Features • Suitable for low noise amplifier of PHS 1.9 GHz • Low voltage and low current operation (3V, 3mA typ.) • Low noise (1.9 dB typ.) • High power gain (13.5 dB typ.)

HA3-2607-5

Abstract: HA-2607 HA-2627 HA3-2627-5 ha2607 2627-5 ha3 2627-5
Contextual Info: HA2607/2627 Wide Band Operational Amplifier Series FEATURES DESCRIPTION HA-2607 HA-2627 • Wide gain-bandwidth • High slew rate • Wide power bandwidth 12 100 MHz 7 35 V/jLlS 75 600 KHz • High.gain 150KV/V • High input Impedance SOOMil HA-2607/2627 bipolar operational amplifiers are high per­

agbf

Abstract: LT 5351
Contextual Info: Revised Date Classi­ fication tnd. Content enactment Ft# Electric Ca,LtcL Records Applied date Issued date Brawn Checked Approved - MS5F3241 # »4-004-06 3 IM B I 4 O O M B - I 3 0 t. Outline Drawinn Unit : ma 2. Equivalent circuit -OB c o- o Ô G *NUJ (Over Carrent Liai ting Circuit

palce22v10 programming guide

Contextual Info: COM’L MIL PAL22V10-10/15 AmPAL22V10/A PALCE22V1 OH-15/25/Q-25 Advanced Micro Devices 24-pln TTL/CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 10 ns propagation delay and 71 MHz fMAX ■ Low-power EE CMOS versions ■ 10 m acroceils program m able as registered or

RAL22V10

Abstract: PALCE22V100-25 pal22v10
Contextual Info: COM’L MIL Cl PAL22V10-10/15 AmPAL22Vl 0/A PALCE22V10H-15/25/Q-25 Advanced Micro Devices 24-pln TTUCMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 10 ns propagation delay and 71 MHz fM AX ■ Low-power EE CMOS versions ■ 10 m acrocells program m able as registered o r