H11B1 V Search Results

H11B1

Abstract: H11B3
Contextual Info: MOTOROLA Order this document by H11B1/D SEMICONDUCTOR TECHNICAL DATA H11B1 * [CTR = 500% Min] GlobalOptoisolator 6-Pin DIP Optoisolators Darlington Output Low Input Current H11B3 [CTR = 100% Min] *Motorola Preferred Device The H11B1 and H11B3 devices consist of a gallium arsenide infrared emitting

H11B1

Abstract: H11B2 H11B3
Contextual Info: H11B1/H11B2/H11B3 Photodarlington Optocoupler FEATURES • CTR Minimum at IF = 1.0 mA H11B1, 500% H11B2, 200% H11B3, 100% • Isolation Test Voltage, 5300 VRMS • Coupling Capacitance, 0.5 pF • Underwriters Lab File #E52744 • V VDE Approval #0884 Available with

optocoupler H11b1

Abstract: H11B1 H11B2 H11B3
Contextual Info: H11B1/H11B2/H11B3 Photodarlington Optocoupler FEATURES • CTR Minimum at IF = 1.0 mA H11B1, 500% H11B2, 200% H11B3, 100% • Isolation Test Voltage, 5300 VRMS • Coupling Capacitance, 0.5 pF • Underwriters Lab File #E52744 • V VDE Approval #0884 Available with

H11B1

Abstract: H11B2 H11B3
Contextual Info: g y, , H11B1/H11B2/H11B3 Photodarlington Optocoupler FEATURES • CTR Minimum at IF = 1.0 mA H11B1, 500% H11B2, 200% H11B3, 100% • Isolation Test Voltage, 5300 VRMS • Coupling Capacitance, 0.5 pF • Underwriters Lab File #E52744 • V VDE Approval #0884 Available with

Contextual Info: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS H11B1 H11B2 H11B3 PACKAGE DIMENSIONS tfi] DESCRIPTION [& The H11B series consists of a gallium arsenide infrared em itting diode, coupled with a silicon photodarlington transistor in a dual in-line package. FEATURES

EL4N33

Abstract: H11BX 4N33 4N32 4n33 schematic 4N31 H11B1 4N29 4N30 E214129
Contextual Info: TIL113 4NXX Series H11BX Series 6 PIN PHOTODARLINGTON PHOTOCOUPLER Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N33 • H11BX series: H11B1, H11B2, H11B3, H11B255 • High isolation voltage between input and output Viso=5000 V rms • Creepage distance >7.62 mm

ST1736

Abstract: optocouplers H11B1
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS H11B1 H11B2 H11B3 PACKAGE DIMENSIONS DESCRIPTION The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-line package. ft ft ft FEATURES

optocouplers 501 IC

Abstract: TIL113 CNX48U
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current

H11BX

Abstract: CNX48U H11B255 optocouplers 501 H11B1 H11B2 H11B3 MOC8080 TIL113
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current

Contextual Info: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current

h11b255

Abstract: CNX48U
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current

optocouplers 501

Abstract: H11BX CNX48U TIL113 H11B1 H11B255 optocouplers 501 IC H11B2 H11B3 MOC8080
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current

E91231

Abstract: H11B H11B1 H11B1X H11B2 H11B2X H11B3 H11B3X
Contextual Info: H11B1X, H11B2X, H11B3X H11B1, H11B2, H11B3 OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT UL recognised, File No. E91231 l 6.4 6.2 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead form : - STD - G form VDE 0884 in SMD approval pending l SETI approved, reg. no.151786-18

E91231

Abstract: H11B H11B1 H11B1X H11B2 H11B2X H11B3 H11B3X
Contextual Info: H11B1X, H11B2X, H11B3X H11B1, H11B2, H11B3 OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT UL recognised, File No. E91231 l 6.4 6.2 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead form : - STD - G form VDE 0884 in SMD approval pending l SETI approved, reg. no.151786-18

optocoupler H11b1

Contextual Info: H11B1, H11B2, H11B3 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, with Base Connection FEATURES • Isolation test voltage: 5300 VRMS A 1 6 B C 2 5 C • Lead Pb -free component NC 3 4 E • Component in accordance to RoHS 2002/95/EC

H11B1

Abstract: H11B1-X007 H11B1-X009 H11B2 H11B2-X009 H11B3 optocoupler H11b1
Contextual Info: H11B1, H11B2, H11B3 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, with Base Connection FEATURES • Isolation test voltage: 5300 VRMS A 1 6 B C 2 5 C • Lead Pb -free component NC 3 4 E • Component in accordance to RoHS 2002/95/EC

H11B1

Abstract: H11B2 VDE0160 VDE0832 VDE0833
Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA H11B1 H11B2 H11B3 6-Pin DIP O ptoisolators Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applica­

Contextual Info: H11B1/H11B2/H11B3 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, With Base Connection FEATURES • Isolation test voltage: 5300 VRMS • Coupling capacitance, 0.5 pF • Lead Pb -free component A 1 6 B C 2 5 C NC 3 4 E • Component in accordance to RoHS 2002/95/EC

Contextual Info: csxa PHOTODARUNGTON OPTOCOUPLERS s m E u m s iic s H11B1 H11B2 H11B3 The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-fine package High current transfer ratio H1181 -500% mtn.

Contextual Info: H11B1/H11B2/H11B3 Photodarlington Optocoupler FEATURES • CTR Minimum at Ip = 1.0 mA H11 B1, 500% H11 B2, 200% H 1 1 B 3 ,100% • Isolation Test Voltage, 5300 V RMS D im ensions in inches mm pin one ID lai 121 Î .248 (6.30) .256 (6.50) • Coupling Capacitance, 0.5 pF

Contextual Info: H11B1 H11B2 H11B3 O P T O C O U P L E R S Optically coupled isolators consisting o f an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. Features • Very high output/input DC current transfer ratio • Isolation voltage o f 2 kV RMS and 2.82 kV DC

PS2004B

Abstract: PS2004 4N29 4N30 4N32 4N33 4N38 FCD850 FCD855 FCD860
Contextual Info: — fiumu LE D -D arlin g to n Transistor with Base Connection LED- 2" — U > h > • 7 * h • è uj $1 PS2004B PS2014 MFCD850 4N29 4N30 4N31 4N32 4N33 4N38 FCD850 FCD855 FCD860 FCD865 H11B1 H11B2 MCA230 MCA231 # i i -6 jF 50 i 'J 'J # JED E C 80 60 80

FF 030 PK

Abstract: led ir Darlington pair IC schematic 4n33 schematic H11B1 H11G1 H11G2 H11G3 H24B1 H24B3
Contextual Info: ISOCOM COMPONENTS Photo Darlington With Base Lead Part N u m b er Fea tu res Iso la tio n V o lta g e VDC C u rren t T ra n s fe r R a tio M in % H11B1 M C A255 IS662 Ir = lO fiA M a x (V ) (D ark) VcE(Sat) M ax (v) V ce = 1 0 V ( lc = ( lc = 1000 1m A )

Contextual Info: H11B1/H11B2/H11B3 SIEMENS FEATURES * CTR M in im u m at l F = 1 m A H 1 1 B 1 ,500% H11 B 2 ,2 0 0 % PHOTODARLINGTON OPTOCOUPLER Package Dimensions in Inches mm I?1 Ù ] f?l Anode [ E .248(6.30) 256 (6.50) J D Base i Cathode (~2 _ J H 1 1 B 3 ,100%, * W ith s ta n d T e s t V o lta g e , 7500 V o lt