H-BRIDGE P N MOS Search Results

Contextual Info: HARRIS H S E M I C O N D U C T O R P 2 1 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver October 1995 Description Features • I Drives N-Channel MOSFET Half Bridge The H IP 2100 is a high frequency, 100V Half Bridge N-Channel M O S F E T driver IC, available in 8 lead plastic

4707 N Channel MOSFETs

Abstract: MSK3014
Contextual Info: M.S.KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3014 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: P and N Channel MOSFETs for Ease of Drive 100 Volt, 10 Amp Full H-Bridge Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity

Contextual Info: AMG-PI004 H-Bridge/Full Bridge Array of P and N channel MOSFETs 1. Functional Description of the AMG-PI004 The AMG-PI004 is built by utilizing one of the latest state-of-the-art trench technologies to achieve ultra low resistance RDS on for the power MOSFETs. The complementary H-bridge

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ;t P D 16814 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The ¿¡PD16814GS is a monolithic dual H bridge driver circuit employing a power MOS FET for its driver stage. By complementing the P channel and N channel of the output stage, the circuit current is substantially improved as

Contextual Info: National July 1996 Semiconductor" NDS8858H Complementary MOSFET Half Bridge General Description Features T hese C o m p le m e n ta ry MOSFET h a lf b rid g e devices are p ro d u ce d u sin g N a tio n a l's p ro p rie ta ry , h ig h cell d e n s ity , D M O S te c h n o lo g y . T h is ve ry

4707 N Channel MOSFETs

Abstract: P channel MOSFET 10A schematic drive motor 10A with transistor P channel MOSFET MSK3014 transistor servo drive S 170 MOSFET TRANSISTOR 10 amp H-bridge Mosfet stepper STEPPER MOTOR DRIVE 6 AMP all high power mosfet transistor drive motor 10A with transistor
Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3014 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: P and N Channel MOSFETs for Ease of Drive 100 Volt, 10 Amp Full H-Bridge Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity

Contextual Info: V IS H A Y - S i4 5 0 0 D Y New Product Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY V d s (V) N-Channel 20 P-Channel Id (A) r D S (o n )

Contextual Info: f l l H A R R IS H S E M I C O N D U C T O R 4 8 1 80V/2.5A Peak, High Frequency Full Bridge FET Driver March 1995 Description Features • I P Independently Drives 4 N-Channel FET in Half Bridge o r Full Bridge Configurations T h e HIP4081 is a high frequency, medium voltage Full Bridge NChannel FET driver IC, available in 20 lead plastic S O IC and DIP

C10535E

Abstract: h bridge
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16813 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16813 is a monolithic dual H bridge driver circuit which uses power MOS FETs in its driver stage. By complementing the P channel and N channel of the output stage, the circuit current has been substantially inproved

TRANSISTOR h2f

Abstract: C10535E RH2F
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16814 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16814GS is a monolithic dual H bridge driver circuit employing a power MOS FET for its driver stage. By complementing the P channel and N channel of the output stage, the circuit current is substantially improved as

50P03L

Abstract: 4278G Q67060-S6160 7960B BTS7960B
Contextual Info: Preliminary Product Brief BTS 7960B High Current PN Half Bridge N o v a l i t h I C TM T H E B T S 7 9 6 0 B is a fully integrated high current half bridge for motor drive applications. It is part of the NovalithIC TM family containing one p-channel highside MOSFET and one n-channel lowside

Contextual Info: Temic s,„eu_ Si9978DW Configurable H-Bridge Driver Features • H -B ridgc o r D ual H alf-B ridge O p eratio n • 20- to 40-V Supply • Static dc O p eratio n • • • C ross-C onduction P rotected C urrent Limit U ndervoltage Lockout

Contextual Info: SÌ9986 VISHAY ▼ Vishay Siliconix Buffered H-Bridge FEA TU R ES A P P L IC A T IO N S • • • • • • • • • • • • • 1.0-A H-Bridge 200-kHz Switching Rate Shoot-Through Limited TTL Compatible Inputs 3.8- to 13.2-V Operating Range Surface Mount Packaging

d16803

Abstract: S1145 S11452
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿ ¿ P D 1 6 8 3 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The /¿PD16803 is a m onolithic dual H bridge driver circuit which uses N-channelpower MOS FETs By em ploying the pow er MOS FETs for the output stage, this driver circuit has a substantially

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT jUPD16813 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The ¿¡PD16813 is a m onolithic dual H bridge driver circuit w hich uses power MOS FETs in its driver stage. By com plem enting the P channel and N channel of the output stage, the circuit current has been substantially inproved

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿ ¿ P D 16818 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The ¿¿PD16818 is a monolithic dual H bridge driver IC which uses N-channel power MOS FETs in its output stage. By employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage and

Si9959

Abstract: SI9910 AN90 siliconix
Contextual Info: SA Member S ioflthei cT o nGroupi x AN90-5 emic Low-Voltage Motor Drive Designs Using N-Channel Dual MOSFETs in Surface-Mount Packages Jim H am den Two basic M O SFET configurations are used in low-voltage m otor drives — the n-channel half-bridge and the p- and n-channel com plem entary half-bridge. T he

7930B

Abstract: HLGF1019 Thermal Shut Down Functioned MOSFET 50P03L P-TO-263-7 BTS 7930B BTS7930B P-TO263-7 H bridge current sense 4311 mosfet transistor
Contextual Info: Data Sheet, Rev. 2.0, June 2006 BTS 7930B H ig h C u r r e n t P N H a lf B r i d g e N o v a l it h I C TM 30 A, 10 mΩ + 18 mΩ typ. Automotive Power N e v e r s t o p t h i n k i n g . High Current PN Half Bridge BTS 7930B Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

BTS7960B

Abstract: SR 4216 D TRANSISTOR SWITCHING SR 4216 D TRANSISTOR 50P03L HLGF1019 Q67060-S6160 half bridge bts 7960 NovalithIC transistor SR 51 leadframe to-220-7
Contextual Info: Preliminary Data Sheet, V1.0, November 2004 BTS 7960 H ig h C u r r e n t P N H a lf B r i d g e N o v a l it h I C TM 43 A, 7 mΩ + 9 mΩ Automotive Power N e v e r s t o p t h i n k i n g . High Current PN Half Bridge BTS 7960 Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD1 6 8 1 4 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The /¿PD16814GS is a m onolithic dual H bridge driver circuit em ploying a power MOS FET for its driver stage. By com plem enting the P channel and N channel of the output stage, the circuit current is substantially im proved as

SI9988

Abstract: Si9988DQ-T1 A065a
Contextual Info: Si9988 Vishay Siliconix Buffered H-Bridge FEATURES D D D D D D D APPLICATIONS 0.65-A H-Bridge 200-kHz Switching Rate Shoot-Through Limited TTL Compatible Inputs 3.8- to 13.2-V Operating Range Surface Mount Packaging Total rDS on for N- and P-Channel: 1.8 W @ VDD = 4.5 V and TA = 85_C

NDS8852H

Abstract: Complementary MOSFET Half Bridge
Contextual Info: P A I R C H February 1996 I I - D iM I C D N D U C T Q R tm NDS8852H Complementary MOSFET Half Bridge Features General Description These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

Complementary MOSFET Half Bridge

Contextual Info: P A I R C H M arch 1996 I I - D iM IC D N D U C TQ R tm NDS8839H Complementary MOSFET Half Bridge Features General Description These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

Contextual Info: A dvanced IMAT5011 500V 30A P o w er T e c h n o l o g y INTELLIGENT HALF BRIDGE POWER MOSFET MODULE PRODUCT DESCRIPTION The IMAT5011 is an isolated power MOSFET module with 2 switches connected in a half bridge configura­ tion, with associated drivers, protections and isolation circuits.