H XP 35 Search Results

CSD-524H

Abstract: 514G-1 514a1 CSD-524E
Contextual Info: Package Outline X o S. « IO s 2 Polarity Device Super-bright Red R1/ Orange IE / Yellow (Y)/Super Green (G)/ Device Red (D) Bright Red (H) Amber (A) Bright Yellow CT) Bright Green (F) Package \p = 660 nm Xp = 655/695 nm Xp = 635/610 nm Xp = 590/585 nm CSD 5425R-21

CL-200YG

Abstract: CL-200 citiled CL-200 IR CL-200r citiled CL-200R CL-200G
Contextual Info: •Features ■ $ » 1 .8 o th mounting available; namely, upright and right-angle mounting 2. Mono-color type 2. 3 .51-ïï5^;Îi3:3.e{L xP.4 W)xp.4(H)mm 3. Dim ensions:3.2(L)x2.4(W )x2,4(H)mm, being a standard size n ^ rT o CHIP LEDs CITILED 4. The package provides a reflector area around

Am386

Contextual Info: 34 AM S/UN 1x10GE XP ASSP Telecom Standard Product Data Sheet Released 10 Ma y ,2 00 5 02 :2 4: PM3393 Tu es da y, S/UNI 1x10GE XP Data Sheet Do wn lo a de d by sa tis h d of ag er rt on SATURN® User Network Interface For 10 Gigabit Ethernet LAN PHY with XAUI

ADC0820 application note

Abstract: 20pin 4bit adc Flash-ADC ADC0820 ADC0820BNED ADC0820BNEN ADC0820BSAD ADC0820BSAN ADC0820BSEF ADC0820CNED
Contextual Info: PHILIPS INTERNATIONAL 5&E ]> • 711DB2LJ QQS111S LIT H P H I N Philips Semlconductors-Signetics Linear Products Product specification 8-Bit, high-speed, xP-compatible A/D converter with track/hold function Anrnfwn AUUUWU PIN CONFIGURATION DESCRIPTION FEATURES

LN68

Contextual Info: Panasonic Infrared Light Emitting Diodes LN68 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 5 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 950 nm (typ.)

AMD Athlon 64 X2

Abstract: amd athlon 27648 AMD xp datasheet AM2 athlon AMD 700 chipset amd am2 pin diagram AMD am2 socket AMD Athlon 64 AMD K6 AMD Athlon 64 X2 thermal
Contextual Info: Preliminary Information AMD Athlon XP Processor Model 8 Data Sheet TM Publication # 25175 Rev. H Issue Date: March 2003 Preliminary Information 2001–2003 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced

LN69

Contextual Info: Panasonic Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 3.5 m W /sr min. • Light emitting spectrum suited for silicon photodetectors : XP = 940 nm (typ.)

transistor NEC D 587

Abstract: de 535
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA800T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 800T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAW INGS

transistor NEC D 587

Abstract: LS 1691 BM UPA802T l 9143 NEC D 587
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 802T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAWINGS

CU4R

Abstract: UCVC ccb software
Contextual Info: PMC-Sierra, Inc. ,V VX  W U XP EH 1 FW R HQ 2 RF XP H '    EH U 30 &     8VHU•V 0DQXDO Preliminary 3U RS UL HW DU \ DQ G FR Q R EL W V IL GH QW LD OW   & 6 7 UD II LF LH UU D ,Q F  70 30 $ DQ G IR U HQ W RP HU V· UL VH  YH U HU QD

NJL5126D

Abstract: NJL5125D NJL1110B NJL1112B NJL1120B NJL1120F NJL1121F NJL1122B NJL112IB NJL6103B
Contextual Info: OPTOELECTRONIC DEVICES & MODULES LIGHT EMITTING DIODE TYPE •:MA33MÊt«te«* w m m m m m IF PD VR Xp [mW] H [nm] 150 100 6 940 DESCRIPTION NJL1104B NJL1110B NJL1112B NJL1120B NJL112IB NJL1122B NJL1120F NJL1121F GaAs Infrared LED 150 225 170 170 170 170

Contextual Info: T -1 3/4 In G a A lP U ltra B rig h t LED TLOH 156P Product Features - • InGaAlP Technology • J-V/* 5 mm Package • High Intensity Orange Light (Xp = 612 nm) Emission • Water Clear Lens M A XIM UM RATINGS (Ta = 2 5 X ) C H A R AC TER ISTIC Forward Current

OED-PCC-9P5

Abstract: 9P5A photo conductive cells vw t4
Contextual Info: photo resistive/conductive cells OED-PCC-9P5-2 Package AC V Style Max T4.2 Ceramic 100 10 AC(Y) % ty !e * 'H oc' T4.2 Ceramic 100 Package Style Max T4.2 Ceramic Maiffcur* ftaMMMtoftlte ment XP (nm) io Lux (Volts) Response Min Max 100 550 tKsmuf* ment •kP (raa)

g1962-01

Abstract: u1116 G1126-02 G1120 hamamatsu PIN TO5 3x1015
Contextual Info: !• * 5 9 HAMAMATSU HE CORP D HSHItiGT DGGHHTB S tàmsââiÊÈàùÊim *m *h GaAsP Photodiodes Effective Sensitive Area mm Package Type No. (mm> (Ta = 25°C) Peak Radiant Spectral Wavelength Sensitivity Response atXp Xp (nm) (nm) (A/W) Short Circuit Shunt

Contextual Info: T -1 3A In G a A lP U ltra B rig h t LED Ultra Bright LEDs High Perform ance TLOUI8OP Product Features • InGaAlP Technology • T-1V« 5 mm Package • High Intensity Orange Light (Xp = 612 nm) Emission • Water Clear Lens • Narrow Radiation Pattern

Contextual Info: I RED 2-C h ip U ltra B rig h t LED Ultra High Bright L E D s P e rfo rm a n c e TLRA256 Product Features • GaAIAs Technology • T1 V* 5 mm Package • Two Chip Device • High intensity Red Light (Xp = 660 nm) Emission • Water Clear Lens • Wide Radiation Pattern (2fl’/ 2 = 90°)

VEB M ik ro e le k tro n ik

Abstract: Scans-048 selen VOLKSEIGENER AUSSENHANDELSBETRIEB DER D E U TS C H E N D E M O K R A T IS C H E N R E P U B L IK 2501C 10C10 schaltungen
Contextual Info: E xp o rt-In fo rm a tio n d u rc h : E X P O R T " I i P O R T VOLKSEIGENER AUSSENHANDELSBETRIEB DER D E U TS C H E N D E M O K R A T IS C H E N R E P U B L IK - DDR 102 BERLIN-ALEX ANDERPLATZ HAUS DER ELEKTROINDUSTRIE m VEB G LE IC H R IC H T E R W E R K G R O S S R Ä S C H E N

est 7502 b data sheet

Contextual Info: P E H I1 0 IM 1 D B M IV i n Dt t e : s. i 991 82495XP CACHE CONTROLLER/ 82490XP CACHE RAM • Two-Way, Set Associative, Secondary Cache for i860 XP Microprocessor MESI Cache Consistency Protocol ■ 50 MHz “No Glue” Interface with CPU Maintains Consistency with Primary

Contextual Info: T-1 In G a A lP U ltr a B rig h t LED 03.810.2 Product Features • InGaAlP Technology • T-1 3 mm Package • Red Light (Xp = 636 nm) Emission • Water Clear Lens • Wide Radiation Pattern • Excellent Low Current Light Output M AXIM UM RATINGS (Ta = 25 C)

Contextual Info: •yello w T-1V4 In G a A lP U ltr a B rig h t LED TLYE156AP Product Features • InGaAlP Technology • T -l’/i 5 mm Package • Yellow Light (Xp = 590 nm) Emission • Water Clear Lens M A XIM UM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT

P201d-7r

Abstract: cds cell P1195 P1202-12 P1202-16 P380-7R P467-7R P722-10R P722-7R 10lux
Contextual Info: Plastic-coated Types 7R, 10R Types Absolute Maximum Ratings Applied V o ltag e a t 2 5 °C Allowable Power Dissipation at 25°C C h ara c te ristic s * 5 (at 2 5 °C ) (Vdc) (mW) <°C) Peak Response Wavelength Xp Typ. (nm) P201D-7R 200 100 - 3 0 to + 6 0

Rubycon CE W

Abstract: Rubycon CE rubycon mxp Rubycon CE w series CE RUBYCON MXP A 100 49 10 RUBYCON M 194 Rubycon "CE W" Rubycon CE 1000 hours
Contextual Info: RUBYCON AMERICA INC GöE D | 7^005^0 DD0D4fit'0 | c a p a c ito rs f r - 0 5 ' H '° 3 REB L 8 8 —05 M XP LARGE CAN TYPE ALUMINUM ELECTROLYTIC CAPACITORS • MXP SERIES [Long Life! 2 0 0 0 hours a t 1 05°C ] Jlzt&SHnOp. CV 4ÖÜ 'fj- O O jifd , S £ f i.@ + I0 5 H

Contextual Info: YELLOW T-1 In G a A lP U ltra B rig h t LED Ultra Bright LEDs High Perfo rm ance TLYU262 Product Features • InGaAlP Technology • T-1 3 mm Package • Yellow Light (Xp = 590 nm) Emission • Water Clear Lens • Excellent Low Current Light Output M A XIM UM RATINGS (Ta = 25°C)

Contextual Info: T-1 In G a A lP U ltra B rig h t LED Ultra Bright L E D s High Perform ance TLSU160 0 3.8±0.2 Product Features • InGaAlP Technology • T-1 3 mm Package • Red Light (Xp = 636 nm) Emission • Water Clear Lens • Narrow Radiation Pattern • Excellent Low Current Light Output