H XP 35 Search Results

A1DK

Contextual Info: Device Bright Red H Orange (E) Am ber (A) Yellow (Y) Green (G) Package Xp = 695 nm Xp = 6 35 nm Xp = 6 10 nm Xp = 590 nm Xp = 570 nm Outline Lamp P/N Lamp P/N Lamp P/N Lamp P/N Lamp P/N C S L -H 6 3 0 5 H 5 C SL -H 6 3 0 5 E 5 C S L -H 6 3 0 5 A 5 C S L -H 6 3 0 5 Y 5

LL20

Abstract: A1GK
Contextual Info: * Iv unit = mcd @ I f - 10 m A. All the lens are colored diffused. C S L -W 1 1 4 X 4 is water clear. Device Bright Red H Red (R) Orange IE) Am ber (A) Yellow <Y) Green (G) Device Package X p = 6 9 5 nm Xp = 6 55 nm Xp = 6 35 nm Xp = 6 1 0 nm Xp = 5 9 0 nm

CSD-524H

Abstract: 514G-1 514a1 CSD-524E
Contextual Info: Package Outline X o S. « IO s 2 Polarity Device Super-bright Red R1/ Orange IE / Yellow (Y)/Super Green (G)/ Device Red (D) Bright Red (H) Amber (A) Bright Yellow CT) Bright Green (F) Package \p = 660 nm Xp = 655/695 nm Xp = 635/610 nm Xp = 590/585 nm CSD 5425R-21

Contextual Info: LEDTRONICS, INC THE FUTURE OF L IG H T Lum inaire Photometric Report Polar Candela Distribution Filename: LED48T8SM-276-XP W-001WF Manufacturer LEDTRONICS Luminaire FROSTED LENS, 18,6 W, 120VAC Luminaire Cat LED48T8SM-276-XP W-001WF Lamp . LUMEN RATING: 1288.7Lms.

CSK-655SH

Abstract: CSK848E
Contextual Info: LED Clock/Frequency Display Package Outline - I 9 iD <2 i5‘ ~ ar mm inch Drive M ode Polarity Device 7.7 Duplex SuperBright Red (H) Device Orange (E) Green (G) Bright Red(D) Package Xp = 6 9 5 nm \p = 6 6 0 nm \p = 6 3 5 nm Xp = 570 nm CSK-355H-1 2 CSK-355D-1 2

CL-200YG

Abstract: CL-200 citiled CL-200 IR CL-200r citiled CL-200R CL-200G
Contextual Info: •Features ■ $ » 1 .8 o th mounting available; namely, upright and right-angle mounting 2. Mono-color type 2. 3 .51-ïï5^;Îi3:3.e{L xP.4 W)xp.4(H)mm 3. Dim ensions:3.2(L)x2.4(W )x2,4(H)mm, being a standard size n ^ rT o CHIP LEDs CITILED 4. The package provides a reflector area around

Am386

Contextual Info: 34 AM S/UN 1x10GE XP ASSP Telecom Standard Product Data Sheet Released 10 Ma y ,2 00 5 02 :2 4: PM3393 Tu es da y, S/UNI 1x10GE XP Data Sheet Do wn lo a de d by sa tis h d of ag er rt on SATURN® User Network Interface For 10 Gigabit Ethernet LAN PHY with XAUI

ADC0820 application note

Abstract: 20pin 4bit adc Flash-ADC ADC0820 ADC0820BNED ADC0820BNEN ADC0820BSAD ADC0820BSAN ADC0820BSEF ADC0820CNED
Contextual Info: PHILIPS INTERNATIONAL 5&E ]> • 711DB2LJ QQS111S LIT H P H I N Philips Semlconductors-Signetics Linear Products Product specification 8-Bit, high-speed, xP-compatible A/D converter with track/hold function Anrnfwn AUUUWU PIN CONFIGURATION DESCRIPTION FEATURES

LN68

Contextual Info: Panasonic Infrared Light Emitting Diodes LN68 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 5 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 950 nm (typ.)

Contextual Info: Panasonic Infrared Light Emitting Diodes LN68 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 5 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 950 nm (typ.)

AMD Athlon 64 X2

Abstract: amd athlon 27648 AMD xp datasheet AM2 athlon AMD 700 chipset amd am2 pin diagram AMD am2 socket AMD Athlon 64 AMD K6 AMD Athlon 64 X2 thermal
Contextual Info: Preliminary Information AMD Athlon XP Processor Model 8 Data Sheet TM Publication # 25175 Rev. H Issue Date: March 2003 Preliminary Information 2001–2003 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced

LN69

Contextual Info: Panasonic Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 3.5 m W /sr min. • Light emitting spectrum suited for silicon photodetectors : XP = 940 nm (typ.)

TRansistor A 940

Abstract: NJL5125D NJL1110B NJL1104B NJL1112B NJL1120B NJL1120F NJL1121F NJL5126D NJL112IB
Contextual Info: OPTOELECTRONIC DEVICES & MODULES LIGHT EMITTING DIODE TYPE NJL1104B NJL1110B NJL1112B NJL1120B NJL1121B NJL1122B NJL1120F NJL1121F DESCRIPTION PD [mW] 150 150 225 170 170 170 170 170 GaAs Infrared LED GaAlAs Infrared LED wmmW&mmmm IF H I VR m Xp [nm] 100 100

transistor NEC D 587

Abstract: de 535
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA800T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 800T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAW INGS

11w cfl circuit

Abstract: HE8807SG HL1521A HL1521AC HL1521FG HL8312E LTH 1550 01 Hitachi Scans-001 44BA
Contextual Info: H I T A C H I / O P tOELECTRONICS 5 ME D • 44 Tbi2 D 5 G1 2 1 3 5 23 ^ ■ HITM InGaAsP LD H L 1 5 2 1 A /A C /F G 'T 'H t-c Description The HL1521A/AC/FG are 1.55 (im band laser diodes. Features • • Absolute Maximum Ratings (Tc = 25°C) Long wavelength output: Xp = 1530 - 1570 nm

CU4R

Abstract: UCVC ccb software
Contextual Info: PMC-Sierra, Inc. ,V VX  W U XP EH 1 FW R HQ 2 RF XP H '    EH U 30 &     8VHU•V 0DQXDO Preliminary 3U RS UL HW DU \ DQ G FR Q R EL W V IL GH QW LD OW   & 6 7 UD II LF LH UU D ,Q F  70 30 $ DQ G IR U HQ W RP HU V· UL VH  YH U HU QD

NJL5126D

Abstract: NJL5125D NJL1110B NJL1112B NJL1120B NJL1120F NJL1121F NJL1122B NJL112IB NJL6103B
Contextual Info: OPTOELECTRONIC DEVICES & MODULES LIGHT EMITTING DIODE TYPE •:MA33MÊt«te«* w m m m m m IF PD VR Xp [mW] H [nm] 150 100 6 940 DESCRIPTION NJL1104B NJL1110B NJL1112B NJL1120B NJL112IB NJL1122B NJL1120F NJL1121F GaAs Infrared LED 150 225 170 170 170 170

ELD323R

Abstract: ELD-323R ELS-1720 ELS1723P ELS 1720p D305HWB S1001HWA S1006IDR 1723R els-1720y
Contextual Info: E4 D EVERLIGHT ELE CTRONICS LED DIGIT DISPLAYS Type No. and Remark Display Size New Modal No. Chip ' Material Emitted - Color C.C. or C .K Xp nm (* ) 1.0 inch Single Digit n £ = Jn H ELS-1723B GaAsP Red S1001HWA * ELS-1723P GaP Bright Red S1M1GWA • ELS-1723G

Contextual Info: T -1 3/4 In G a A lP U ltra B rig h t LED TLOH 156P Product Features - • InGaAlP Technology • J-V/* 5 mm Package • High Intensity Orange Light (Xp = 612 nm) Emission • Water Clear Lens M A XIM UM RATINGS (Ta = 2 5 X ) C H A R AC TER ISTIC Forward Current

OED-PCC-9P5

Abstract: 9P5A photo conductive cells vw t4
Contextual Info: photo resistive/conductive cells OED-PCC-9P5-2 Package AC V Style Max T4.2 Ceramic 100 10 AC(Y) % ty !e * 'H oc' T4.2 Ceramic 100 Package Style Max T4.2 Ceramic Maiffcur* ftaMMMtoftlte ment XP (nm) io Lux (Volts) Response Min Max 100 550 tKsmuf* ment •kP (raa)

g1962-01

Abstract: u1116 G1126-02 G1120 hamamatsu PIN TO5 3x1015
Contextual Info: !• * 5 9 HAMAMATSU HE CORP D HSHItiGT DGGHHTB S tàmsââiÊÈàùÊim *m *h GaAsP Photodiodes Effective Sensitive Area mm Package Type No. (mm> (Ta = 25°C) Peak Radiant Spectral Wavelength Sensitivity Response atXp Xp (nm) (nm) (A/W) Short Circuit Shunt

Contextual Info: 122= 231 T ' 1 In G a A lP U ltra B rig h t LED High Perform ance Ultra Bright LEDs TLPGA262 # 3 -8 ± 0 .2 # 3 -2 ± 0 .2 Product Features - rFsl • InGaAlP Technology • T-1 3 mm Package CM -H io tô • High Intensity Green Light (Xp = 562 nm) Emission

sf p101

Abstract: ci 565 333VGT P101 HRC-3 000GD 494VGT 333HRD2/H
Contextual Info: EVERLIGHT ELECTRONICS 3QE D m The Super 3M1S703 0Æ R L1G H T C O M M ITTED T O H I-Q U ALITY 0D0QDfl4 T WÊ 3 0 <T-1 Round Type LEDs Lens Water Clear Tinted Transparent Tinted Diffused Iv mcd) 20 mA Wave Length Vf(V) 20 mA Min. Typ. Xp(nm) Typ. 300 180

Contextual Info: T -1 3A In G a A lP U ltra B rig h t LED Ultra Bright LEDs High Perform ance TLOUI8OP Product Features • InGaAlP Technology • T-1V« 5 mm Package • High Intensity Orange Light (Xp = 612 nm) Emission • Water Clear Lens • Narrow Radiation Pattern