H R C M F 3B Search Results

FND LT 542

Abstract: RBL 43 P 530 SE TMPZ84C00 pins of FND LT 542 dsasl
Contextual Info: HARD DISK CONTROLLER TC8561F TENTATIVE Hard Disk Controller 1. GENERAL DESCRIPTION T h e T C 8 5 6 1 F H D C is a h i g h efficiency 108 73 h a rd disk c o n tro lle r w ith a b u ilt-in disk c o n tro lle r , s y s te m i n te r f a c e , b u f f e r m e m o r y

Contextual Info: H D 404618/H D404616 / H D 404614/H D4074618 Description — 5 u s fo s c = 800 kH z T his m ic ro co m p u te r u n it w as d esig n ed w ith the p o w e r f u l a n d e f f i c i e n t a r c h ite c tu r e o f th e H M C S 400 fam ily. T he M C U incorporates a highp r e c is io n d u a l- to n e m u ltif r e q u e n c y (D T M F )

HMCS42

Abstract: HD38702
Contextual Info: HMCS42 HD38702 T h e H M C S 4 2 is t h e P M O S 4 - b it s in g le c h ip m ic r o c o m p u t e r w h ic h c o n ta i n s R O M , R A M a n d I /O o n s in g le c h ip . T h e H M C S 4 2 is d e s ig n e d to p e r f o r m e ff ic ie n t c o n tr o l le r f u n c t i o n a s

microchip pic 14f

Abstract: pic spwm PIC12F688 2F688 hp 2211 PIC16F688 AN893 PIC16F PIC12F684 16f684 PIC16F684F
Contextual Info: £ K U. ffl 21« I m PIC* Flash v -i ï p a > h P — 7 M i c r o c h ip ^ 't f > P I C F l a s h v ^ ^ n = l > tf>PIC® F l a s h V > r ^ P = i > h P - 7 v'-'T ^ P ? 'V 7 t t '> k f > PIC® V-r ? □ □ y h P - 7 T , & m M l&<DJ'irJ-% 'X<D JLy'<Tt V h*S/XxAfcflRO A t l T * * - &

ac165

Contextual Info: TC74ACT157P/F/FW, TC74ACT158P/F/FN TC74ACT157P/F/FN QUAD 2 -C H A N N E L M U L T IP L E X E R TC74ACT168P/F/FN QUAD 2 -C H A N N E L M U L T IP L E X E R IN V E R T IN G T h e TC 74A C T 157 a n d th e TC 74A C T 158 a r e a d v a n c e d high sp e e d C M O S Q U A D 2 -C H A N N E L M U L T I P L E X E R 'S

l289

Contextual Info: TC74HC157AP/AF/AFN TC74HC158AP/AF/AFN T C 7 4 H C 15 7A P / A F/ A F N T C 7 4 H C 15 8A P / A F/ A F N QUAD 2 - C H A N N E L QUAD 2 -C H A N N E L MULTIPLEXER M U L T I P L E X E R S VERTING T h e TC74HC157A a n d TC74HC158A a r e h igh speed CM OS 2 - C H A N N E L M U L T I P L E X E R S f a b r i c a t e d with

MC6800 pin diagram

Abstract: MC6800 MC68B00P M6800 programming manual MC6800 addressing modes list all the INSTRUCTION SET motorola mc6800 SSC 9500 MC6800 manual MC6800P MC68B00
Contextual Info: MOTOROLA S E M IC O N D U C TO R TECHNICAL DATA MC6800 8-Bit Microprocessing Unit MPU T h e M C 6 8 0 0 is a m o n o lit h ic 8 - b it m ic r o p r o c e s s o r f o r m in g th e c e n tr a l c o n t r o l f u n c tio n f o r M o to r o la 's M 6 8 0 0 F a m ily . C o m p a tib le w ith T T L , th e M C 6 8 0 0 , as w it h a ll M 6 8 0 0 s y s te m p a rts , r e q u ir e s o n ly o n e

2249A

Abstract: flat screen tv circuit diagram XF MR 50hz trans mc2249a
Contextual Info: F A I R C H I L D s e m ic o n d u c t o r w w w .fa ir c h ild s e m i.c o m tm TMC2302 Image Manipulation Sequencer 40 M H z Features Applications • Asynchronous loading o f control parameters • Rapid 25ns per pixel rotation, warping, panning, and

ac161

Abstract: TC74AC158
Contextual Info: TC74AC157P/F/FN, TC74AC158P/F/FN P/F/FN QUAD 2-C H A N N EL M U L T IP L X E R P/F/FN QUAD 2-C H A N N EL M U L T IP L X E R IN V E R T IN G Ti The TC74AC1S7 and the TC74AC158 are advanced high speed CMOS QUAD 2-C H A N N EL M U L T IPL EX E R ’S fabricated with silicon gate and d o u b le -lay er m etal

sf 118 d

Abstract: tj-2 94v 1da marking IR 5MM LED SFT11G SFT18G
Contextual Info: E SFT11G - SFT18G TAIWAN SEM ICONDUC 1.0 AMP. Glass Passivated Super Fast Rectifiers tà RoHS IS A CO M PLIANCE -0 - 1 .0 l2 c 4 1 MM. Features f- H ig h B f f i c i a n c y . lo v / V F <• 4-f- H Ig h c u r re n t c?,p a b III ly H ig h r e lia b ilit y

2242B

Abstract: DXU working
Contextual Info: P A I R C H I I - D s e m ic o n d u c t o r w w w .fa ir c h ild s e m i.c o m tm TMC2302A Image Manipulation Sequencer 40 M H z • A synchronous loading o f control param eters • R apid 25ns per pixel rotation, w arping, panning, and scaling o f im ages

information applikation

Abstract: U2716C35 U214D30 U2732 V40511D K573P "information applikation" U2732C35 U555C 2732A INTEL
Contextual Info: m o G ^ ^ e le l^ t e n o r iîl-i Information Applikation i m f l k F a i ° o l B l H t 3 n a r Information Applikation HEFT =41 MOS-Speicher 3 - E PROM v o b h a lb le it o r w r f c f r a n k f u r c / o d a r im v b ko m b in at m jkro a W tt r onMi KAMMER DER TECHNIK

B3P34

Abstract: 5L8041-XXXSP ST GU 5L80
Contextual Info: M IT S U B IS H I M IC RO CO M PUTERS M 3 7 4 1 6 M 2 -X X X S P /F P PRELIMINARY N o tirp - T h is i.s no t a fin a l s p ^ c if.ra tic n . S 'im f param étre r lim its are su h ie c t to change. S IN G L E -C H IP 8 -B IT CM O S M IC R O C O M P U T E R

Contextual Info: TC74AC157P/F/FN TC74AC158P/F/F N QUAD 2 -C H A N N E L QUAD 2 -C H A N N E L MULTIPLEXER M U LTIPLEXER INVERTIN G T h e TC74AC157 a n d t h e TC74A C158 a r e a d v a n c e d h i g h sp e e d C M O S Q U A D 2 - C H A N N E L M U L T I P L E X E R ’S

54HC02

Abstract: I3003 54HC266 lqs4
Contextual Info: MIL-M-38510/É51A 15 May 1987 Superseding M I L - M - 38510/651 31 M a r c h 1986 MILITARY SPECIFICATION M I C R O C I R C U I T S , DI GITAL, HIGH SPEED, CMOS, NOR GATES, M O N O L I T H I C SILIC ON , P O S I T I V E LO GIC T h i s s p e c i f i c a t i o n is a p p r o v e d f o r u s e by all D e p a r t ­

INS8070

Abstract: DP8350 INS8072 2708 eprom 8A102 TAD 6109 INS8060 INS807X INS8080 JNS807X
Contextual Info: O c to b e r 1 98 0 INS8070-Series Microprocessor Family General Description Features T h e IN S 8 0 7 0 -S e rie s o f m ic r o p r o c e s s o r s h e r e in a fte r re fe rre d to as th e 7 0 -S e rie s F a m ily is In te n d e d f o r use in s y s te m s r e q u ir in g th e e c o n o m y o f a s in g le c h ip , th e

k3882

Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Contextual Info: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d

Contextual Info: MOflyjlflTOPHbm TPMOfl TRIODE T e H e p a T o p H b iii M O f ly r m T o p H b iii T p n o ,q T M - 3 B n p e f l Ha3H aneH ,q r m p a 6 o ib i b H e n c K a > K e H H o ro y c u n e H n a HM3 K 0 M a c T 0 T H b ix c x e iw a x fM-3E The TM-3B triode is used in low-frequency no distor­

Contextual Info: b E M R fia a G G is n s b it h n it m Mi t s u b i s h i m i c r o c o m p u t e r s M 3 7 7 0 2 M 2 -X X X F P , M 3 7 7 0 2 M 2 A X X X F P M 3 7 7 0 2 M 2 B X X X F P .M 3 7 7 0 2 S 1 F P M 3 7 7 0 2 S 1 A F P .M 3 7 7 0 2 S 1 B F P SIN G LE-C H IP 16-BIT CM OS M ICRO COM PUTER

pj 87 diode

Abstract: ICF CP 1005 pj 57 diode marking c260 UZ113 2SC3012 54HC30 si 13003 SR 13003 SR 13003 b
Contextual Info: MIL-M-38510/650A 22 M a y 19 87 SUPERSEDING M I L - M -38510/650 2 5 A u g u s t 1985 r s MILITARY SPECIFICATION M I C R O C I R C U I T S , D I G I T A L , H I G H S P E E D , C M OS , NAND GATES MONOLITHIC SILICON, POSITIVE LOGIC T h i s s p e c i f i c a t i o n is a p p r o v e d f o r u s e by all D e p a r t ­

Contextual Info: M IT S U B IS H I M ICROCOMPUTERS M 3 7 7 0 2 M 2 A X X X F P ,M 3 7 7 0 2 M 2 B X X X F P M 377 02S 1A F P ,M 3 7 70 2 S 1 B F P M37702S1FP are respectively S IN G L E -C H IP 1 6-B IT C M O S M IC R O C O M P U T E R and"M37702S1A7F°P2M2AXXXFP M37702M2BXXXFP, M37702S1BFP

irfip448

Contextual Info: In t e r n a tio n a l IiorI R e c t i f ie r • 4055452 001534^ 3bG m i m p°-9-750 I R F I P 448 H EXFET Power M O SFET • • • • • • • INTERNATION AL R E C T I F I E R Isolated Package DC Package lsolation= 4.0KVDC AC Package lsolation= 2.0KVRMS ©

Contextual Info: T O SH IBA TMP47C232A/432A CM O S 4-BIT M ICRO CO N TRO LLER TMP47C232AN, TMP47C432AN T h e 4 7 C 2 3 2 A / 4 3 2 A a r e t h e h ig h s p e e d a n d h ig h p e r f o r m a n c e 4 - b it s in g le c h ip m ic r o c o m p u t e r s b a s e d o n t h e T LC S-4 7 C M O S s e rie s w i t h D/A c o n v e r t e r P u ls e w i d t h m o d u l a t i o n o u t p u t a n d A u t o f r e q u e n c y c o n t r o l s ig n a l

diode e5f

Abstract: 2SK827 TL08 T108 Scans-0088188
Contextual Info: M O S Field E ffe c t P o w e r T r a n s is t o r MOS FET n m 2 S K 827 ü , m m fi& < , N x f t i w i , x > A > >r •/ f - > x / n > r h a m M O S > , is js m x ^ F E T v ^ > > r * T O , : mm) 0 3 .2 ± 0 .2 D C -D C a 15.7 MAX. 4 . 7 M AX. Z 1.5