H BRIDGE 80 A Search Results

Contextual Info: /SO 9001 CERTIFIED BY DESC M S.KE N N ED Y CORP. 80 VOLT 10 AMP MOSFET H-BRIDGE PWM MOTOR DRIVER/AMPLIFIER 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 FEATURES: Low Cost Complete H-Bridge 10 Amp Capability, 80 Volt Maximum Rating Self-contained Smart Lowside/Highside Drive Circuitry

Contextual Info: SKT 80 THYRISTOR BRIDGE,SCR,BRIDGE Stud Thyristor Line Thyristor SKT 80 Features # $%&'% * '%(+, *+-% .)(/ 0,+-# )1-2,+(3& 4/&%+5%5 -(25 678 9:; 3& =>? :@;A;B 61(%&1+()31+, -(+15+&5 *+-% # Typical Applications* # CD '3(3& *31(&3, # # # 1) E%F 0F G3& '+*/)1%- (33,-H

4700uf

Abstract: 0.5W resistor 600VA resistor 650 ohm 9.5v 0.5W
Contextual Info: 10A QUICK BLOW FUSE +80 to +95V I/P +V 0V INPUT O/P -V 4 OHMS TO *NOTE 1 0V 120 OHM 0.5W RESISTOR *NOTE 2 10A QUICK BLOW FUSE - 80 to -95V 10A QUICK BLOW FUSE +V 65V + 15A BRIDGE ON H/SINK 65V T1 T1 = 600VA +65-0, 65-0 C1/C2 = 4700uF 80V ELECTROLYTICS BRIDGE = 25A 400V PIV

Contextual Info: MKI 80-06T6K IGBT Modules H-Bridge IC25 = 89 A VCES = 600 V VCE sat typ. = 1.8 V Trench IGBT Preliminary data Part name (Marking on product) MKI 80-06T6K 10/17/18/23 15 21 16 22 8 11/12 19/20 7 5 1 6 2 3/4/9/24 Features: Application: Package: • Trench IGBT technology

Contextual Info: SK 80 D 12 F SEMITOP 3 Bridge Rectifier SK 80 D 12 F RSPQ RSSQG R=SQ T= U VW B <6477 %0+4)*.%0D R R <X- U VW Y$D ZMWW P[ VW = ZM ? Symbol Conditions Values Units T= TSSQ ^22 X- U VW Y$ X@¥U ZMLY$ <P, ?./H JD X@¥U ML <ZMLDY$ <P, ?./H JD VW *A'H ]W *A'H K <VD

Contextual Info: MKI 80-06T6K IGBT Modules H-Bridge IC25 = 89 A VCES = 600 V VCE sat typ. = 1.8 V Trench IGBT Preliminary data Part name (Marking on product) MKI 80-06T6K 10/17/18/23 15 21 16 22 8 11/12 E72873 19/20 7 5 1 6 2 3/4/9/24 Features: Application: Package: • Trench IGBT technology

Contextual Info: B40FD. .B380FD Fast Switching Si-Bridge Rectifiers Schnelle Si-Brttckengleichrichter Nom inal current N ennstrom 1A Alternating input voltage Eingangswechselspannung G |R 6.0 -“1 h—6.6—i 4 0 . 3 80 V D IL-plastic case D IL-Kunststoffgehäuse - — 8 . 7 10-6

STA434A

Abstract: STA400
Contextual Info: STA434A PNP + NPN Darlington H-bridge External dimensions D Absolute maximum ratings ••• STA400 Ta=25°C Specification Symbol NPN PNP Unit VCBO 80 –60 V VCEO 60 –60 V VEBO 6 –6 V IC 4 –4 A ICP 8 (PW≤10ms, Du≤50%) –8 (PW≤10ms, Du≤50%)

VJ148M

Abstract: J148M J247M vj048m J447M J647 ZOE10 VJ647
Contextual Info: MICRO QUALITY / EBR SEM IC O N D U C TO R . INC. 10 Amp Epoxy Bridge Rectifiers 10 Amps DC Forward Current at T c = 80°C 100 Amps Peak One Half Cycle Surge Current 2000 Volts Minimum Circuit-to-Case Insulation Glass Passivated Silicon Chips LTR. IN C H E S

Contextual Info: KB67B2HKF440/390-40OG1 Thyristors Common-Cathode Half-Controlled Bridge V RRM Max. (V)200 V(DRM) Max. (V)1.4k I(T) Rated Maximum (A)80² @Temp. (øC) (Test Condition)25 I(TSM) Max. (A)1.2k @ t(w) (s) (Test Condition) I(GT) Max. (A)100m V(GT) Max.(V)2.5 I(H) Max. (A) Holding Current150m

siemens ha 8000

Abstract: BSM 214 A siemens igbt BSM 50 gb 100 d 235L C160 siemens igbt BSM 50 gb 120 d
Contextual Info: bGE D • ôS3SbDS 0QM5ÔMÛ Ö37 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF T ’ Z d r C IGBT Module Preliminary Data ft BSM50GB120D BSM50GAL120D = V CE 1200 V / c = 2 x 70 A at T c = 25 C / c = 2 x 50 A at 80 C Tc = • • • • • Power module H alf-bridge/Chopper

Contextual Info: SINGLE-PHASE FULL WAVE BRIDGE 6.0 AMPERES HEAT SINK MOUNTING 3.0 AMPERES FOR P.C. BOARD MOUNTING PP SERIES PRV/leg 50V 100V 200V 400V 600V 800V 1000V Type No. PP 05 PP 10 PP 20 PP 40 PP 60 PP 80 PP100 E L E C T R IC A L C H A R A C T E R IS T I C S PER LEG

Contextual Info: SINGLE-PHASE FULL WAVE BRIDGE 6.0 AMPERES HEAT SINK MOUNTING 3.0 AMPERES FOR P.C. BOARD MOUNTING PP SERIES PRV/leg 50V 100V 200V 400V 600V 800V 1000V Type No. PP 05 PP 10 PP 20 PP 40 PP 60 PP 80 PP100 E L E C T R IC A L C H A R A C T E R IS T IC S PER LEG

B40C-1200

Contextual Info: Bridge Rectifiers V RR\1 v rnls Io T Y P E NO. I fsm I rrm V FM C A SE T, If °C (A ) (H A ) (V ) (A ) 1.0* 25 50 10 1.1 0.8 1.0* 25 50 10 1.1 0.8 80 1.0* 25 50 10 1.1 0.8 300 125 1.0* 25 50 10 1.1 0.8 B250C800W 600 250 1.0* 25 50 10 1.1 0.8 B380C800W 900

Contextual Info: SINGLE-PHASE FULL WAVE BRIDGE 2.0 AMPERES FOR P.C. BOARD MOUNTING 3.0 AMPERES HEAT SINK MOUNTING PV SERIES PRV/leg 50V 100V 200V 400V 600V 800V 1000V Type No. PV 05 PV 10 PV 20 PV 40 PV 60 PV 80 PV100 E L E C T R IC A L C H A R A C TE R IS TIC S PER LEG at T a = 25°C Unless Otherwise Specified

Contextual Info: Three Phase Bridge Standard & Fast Recovery 678, 682, 695 Sc 696 Series Inches Dim . A B C D E F G H J K L M illim e te r .820 MAX. .09 DIA. TYP. .1 6 4 -.1 7 4 DIA. .3 6 5 -3 8 5 1 .8 70-1 .8 80 .7 4 0 -7 6 0 .3 7 0 -3 9 0 .040 TYP. .4 8 6 -,5 0 6 .115—.135

40MT160KPBF

Abstract: 160mt160kpbf
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Modules - Wide Range of Standard and Customizable Packages Power Modules Featured Products Standard Recovery Diode Modules Fast Recovery Diode Modules Schottky Modules Ultrafast Modules Thyristor Modules IGBT Modules

HMC1512

Abstract: anisotropic magnetoresistance HMC1501
Contextual Info: Honeywell SENSOR PRODUCTS Preliminary Linear I Angular I Rotary Displacement Sensors APPLICATIONS Linear Displacement Angular Displacement HMC1501 I HMC1512 Motor Control Valve Position igh resolution, low power MR sensor H Proximity Detection capable of m easuring the angle

C10535E

Abstract: VP15-00-3 PD16818 8JG 36
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16818 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16818 is a monolithic dual H bridge driver IC which uses N-channel power MOS FETs in its output stage. By employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage and

20201

Abstract: 7x7x1 7x7x1.4 30-BRIDGE
Contextual Info: Silicon Power Rectifier Assemblies Plate Heatsink • Complete bridge with heatsinks no assembly required • Available in m any circuit configurations • Rated for convection or forced air cooling • Available with bracket or stud mounting • Designs include: D O -4 , D O -5 ,

Contextual Info: SKT 80 THYRISTOR BRIDGE,SCR,BRIDGE Stud Thyristor Line Thyristor SKT 80 Features                    !"#         Typical Applications*  $%        1 &' '      )

LF1111

Abstract: linear displacement sensor ic
Contextual Info: Honeywel SENSOR PRODUCTS Preliminary Linear / Angular Displacement Sensor APPLICATIONS Linear Displacement Angular Displacement Motor Control Valve Position Proximity Detection Anti-Lock Brake Systems Current Spike Detection H igh resolution, low power MR sensor

Contextual Info: n Z J S G S -T H O M S O N ^ 7 # . TDA7278 !M » [^ [E T M 0 g S HIGH-EFFICIENCY CD ACTUATOR DRIVER PRODUCT PREVIEW WIDE OPERATIVE SUPPLY RANGE (1.6 to 7V LOW VOLTAGE OPERATION CAPABIL­ ITY 4 LOAD DRIVING VOLTAGES PWM REGU­ LATED (STEP DOWN FROM BATTERY)

20-PIN

Abstract: VP15-00-3
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid