GTO SWITCHING CIRCUIT Search Results

Contextual Info: INTRODUCTION Toshiba is one of the world leader in high power semiconductors, today. Since 1972, we have been making great efforts on developing and producing high power GTOs. The first production type of high power GTO was 600V/200A. Since then, the ratings and characteristics of GTO, such as switching perform­

DWEP

Abstract: stud type diodes
Contextual Info: Diodes Diodes for High Switching Frequencies Diodes for General Purpose Applications Fast Recovery Epitaxial Diodes FRED Rectifier Diodes Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free­

Contextual Info: Diodes Diodes for High Switching Frequencies Diodes for General Purpose Applications Fast Recovery Epitaxial Diodes FRED Rectifier Diodes Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free­

diode avalanche DSA 42

Contextual Info: Diodes Diodes for High Switching Frequencies Diodes for General Purpose Applications Fast Recovery Epitaxial HiPerFRED; FRED Rectifier Diodes Diodes Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free­

high power fast recovery diodes

Contextual Info: Diodes Diodes for High Switching Frequencies Diodes for General Pur­ pose Applications Fast Recovery Epitaxial Diodes FRED Rectifier Diodes Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free­

54ACTQ02

Abstract: E20A J14A
Contextual Info: 54ACTQ02 Quad 2-Input NOR Gate General Description The ’ACTQ02 contains four, 2-input NOR gates. The ’ACTQ utilize NSC Quiet Series technology to guarantee quiet output switching and improved dynamic threshold performance. FACT Quiet Series features GTO ® output

SCR GTO

Abstract: CD43 50HP powerex pow-r-blok
Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 SCR/GTO/Diode POW-R-BLOK Modules Ratings and Characteristics 1.6 Power Dissipation The power generated in an SCR consists of the following components: 1. Turn-on switching

SCR GTO

Abstract: CD43 SCR process powerex pow-r-blok
Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 SCR/GTO/Diode POW-R-BLOK Modules Ratings and Characteristics 1.6 Power Dissipation The power generated in an SCR consists of the following components: 1. Turn-on switching

CD43

Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 SCR/GTO/Diode POW-R-BLOK Modules Ratings and Characteristics 1.6 Power Dissipation The power generated in an SCR consists of the following components: 1. Turn-on switching

Contextual Info: Semiconductor 54ACTQ02 Quad 2-Input NOR Gate General Description The ’ACTQ02 contains four, 2-input NOR gates. The ’ACTQ utilize NSC Quiet Series technology to guaran­ tee quiet output switching and improved dynamic threshold performance. FACT Quiet Series features GTO® output

MGT01000

Abstract: CS thyristor cs 3-04 7623A MGT01200 pearson 411 1N6292 221A-04 SG diodes high speed low power thyristor Gate Turn-Off Thyristors
Contextual Info: MOTOROLA SC DIODES/OPTO k3b?2S5 0001103 =| • 25E D r - a s w f Gate Turn-Off Thyristors The GTO is a family of asym metric gate turn-off thyristors designed primarily for dc power switching applications such as motor drives, switching power supplies, inverters, or wherever a need exists for high surge current capabilities and fast

CF400

Contextual Info: C T SGS-THOMSON ^ 7#. B Y T 3 0 P -1 0 0 0 M O »IILI gTO K !l[]@ § FAST R ECO VER Y RECTIFIER DIODE • VERY HIGH REVERSE VOLTAGE CAPABILITY ■ VERY LOW REVERSE RECOVERY TIME Cathode connected to case ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING

high voltage avalanche diode

Contextual Info: Diodes Diodes for High Switching Frequencies Diodes for General Pur­ pose Applications Fast Recovery Epitaxial Diodes HiPerFRED; FRED Rectifier Diodes Power sw itches (IGBT, M O SFET, BJT, GTO) for applications in electronics are only as good as th e ir associated fre e ­

Contextual Info: March 1993 74ACTQ00 Quiet Series Quad 2-Input NAND Gate General Description Features The ACTQOO contains four 2-input NAND gates and utilizes NSC Quiet Series technology to guarantee quiet output switching and improve dynamic threshold performance. FACT Quiet Series features GTO™ output control and

Contextual Info: January 2005 54ACTQ32 Quiet Series Quad 2-Input OR Gate General Description The ’ACTQ32 contains four, 2-input OR gates and utilizes NSC Quiet Series technology to guarantee quiet output switching and improved dynamic threshold performance. FACT Quiet Series features GTO™ output control and

ABB Semiconductors

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 490 8.5 1.4 0.52 1100 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 05D2501 Doc. No. 5SYA1112-03 Sep. 01 • Patented free-floating silicon technology • Low switching losses • Optimized for use as snubber diode in GTO converters

74ACTQ08

Abstract: 74ACTQ08PC 74ACTQ08SC 74ACTQ08SJ M14A M14D MS-001 N14A
Contextual Info: Revised November 1999 74ACTQ08 Quiet Series Quad 2-Input AND Gate General Description Features The ACTQ08 contains four, 2-input AND gates and utilizes Fairchild Quiet Series technology to guarantee quiet output switching and improved dynamic threshold performance. FACT Quiet Series features GTO output control

Contextual Info: SGS-THOMSON L7900 SERIES « M [lLi(gTO K S NEGATIVE VOLTAGE REGULATORS For complete specification refer to " Linear & Switching Voltage Regulators Appi. Manual ( Order Code AMLISVOREST/1 ) • OUTPUT CURRENT UP TO 1,5A ■ OUTPUT VOLTAG E S O F - 5 ;- 5 .2 ;- 6 ;- 8 ;- 1 2 ;

ACTQ04

Abstract: 54ACTQ04 E20A J14A
Contextual Info: 54ACTQ04 Quiet Series Hex Inverter General Description The ’ACTQ04 contains six inverters and utilizes NSC Quiet Series technology to guarantee quiet output switching and improved dynamic threshold performance. FACT Quiet Series features GTO™ output control and undershoot corrector in addition to a split ground bus for superior ACMOS performance.

DS01088

Abstract: ACTQ00 74ACT08MTC 74ACT08PC 74ACT08SC 74ACTQ00 M14A MTC14 N14A
Contextual Info: General Description Features The ACTQ00 contains four 2-input NAND gates and utilizes NSC Quiet Series technology to guarantee quiet output switching and improve dynamic threshold performance. FACT Quiet Series features GTO™ output control and undershoot corrector in addition to a split ground bus for superior ACMOS performance.

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 490 8.5 1.4 0.52 1100 V A kA V Fast Recovery Diode 5SDF 05D2501 mΩ V Doc. No. 5SYA 1112-03 Aug. 2000 • Patented free-floating silicon technology • Low switching losses • Optimized for use as snubber diode in GTO converters

74ACTQ02

Abstract: 74ACTQ02PC 74ACTQ02SC 74ACTQ02SJ M14A M14D N14A
Contextual Info: 74ACTQ02 Quad 2-Input NOR Gate General Description Features The ACTQ02 contains four, 2-input NOR gates. The ACTQ utilize FSC Quiet Series technology to guarantee quiet output switching and improved dynamic threshold performance. FACT Quiet Series features GTO™ output control and undershoot corrector in addition to a split ground bus

ACTQ04

Abstract: 54ACTQ04FMQB
Contextual Info: 54ACTQ04 Quiet Series Hex Inverter General Description The ’ACTQ04 contains six inverters and utilizes NSC Quiet Series technology to guarantee quiet output switching and improved dynamic threshold performance. FACT Quiet Series features GTO™ output control and undershoot corrector in addition to a split ground bus for superior ACMOS performance.

KA 490

Abstract: 85103 DIODE
Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 490 8.5x103 1.4 0.52 1100 V A A V mΩ Ω V Fast Recovery Diode 5SDF 05D2501 Doc. No. 5SYA1112-03 Jan. 03 • Patented free-floating silicon technology • Low switching losses • Optimized for use as snubber diode in GTO