GTO ANALOG DEVICE Search Results

HCF4066BE

Abstract: DD 127 D transistor transistor abe 310
Contextual Info: f Z T ^7# S G S -T H O M S O N IMD gl lllI(gTO@M(5S HCC/HCF4066B QUAD BILATERAL SWITCH FOR TRANSMISSION OR MULTIPLEXING OF ANALOG OR DIGITAL SIGNALS . 15V DIGITAL OR ± 7.5V PEAK-TO-PEAK SWITCHING . 80Q TYPICAL ON RESISTANCE FOR 15V OPERATION . SWITCH ON RESISTANCE MATCHED TO

circuit diagram of home automation using dtmf

Abstract: LTS542R lts542 HL74HCTLS02 lts542R pin diagram KT3170 home automation using dtmf ks58006 LTS542R DATASHEET GTO analog device
Contextual Info: LOW POWER DTMF RECEIVER S5T3170 INTRODUCTION 18−DIP−300A The S5T3170 is a complete Dual Tone Multiple Frequency DTMF receiver that is fabricated by low power CMOS and the SwitchedCapacitor Filter technology. This LSI consists of band split filters, which separates counting section which verifies the frequency and

lts542R

Abstract: circuit diagram of home automation using dtmf lts542 HL74HCTLS02 ks58006 home automation using dtmf lts542R pin diagram KT3170 count GTO LTS542R DATASHEET
Contextual Info: LOW POWER DTMF RECEIVER S5T3170 INTRODUCTION 18−DIP−300A The S5T3170 is a complete Dual Tone Multiple Frequency DTMF receiver that is fabricated by low power CMOS and the SwitchedCapacitor Filter technology. This LSI consists of band split filters, which separates counting

lts542

Abstract: kt3170 lts542R circuit diagram of home automation using dtmf HL74HCTLS02 KS58006 lts542R pin diagram home automation using dtmf DTMF Receiver tone control circuit
Contextual Info: KT3170 LOW POWER DTMF RECEIVER INTRODUCTION 18-DIP-300A The KT3170 is a complete Dual Tone Multiple Frequency DTMF receiver that is fabricated by low power CMOS and the Switched-Capacitor Filter technology. This LSI consists of band split filters, which seperates

3528 20pin

Abstract: AD9688 AD9688BQ AD9688TE AM6688 20pin 4bit adc 175-200MHZ ladder logic analog devices
Contextual Info: High Speed 4-Bit Monolithic ADC ANALOG DEVICES □ AD9688 FEA TURES 200MSPS Encode Rate 7-Bit Differential Linearity Bipolar Input Range Wide Input Range —2.7V to +3.0V AD9688 F U N C T IO N A L B LO CK D IAGRAM APPLICATIONS Digital Radio Electronic Warfare ECM, ECCM, ESM

Contextual Info: ANALOG Fast, Complete Sampling 12-Bit A/D Converter DEVICES_ with Microprocessor Interface □ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ AD678 1.1 Scope. This specification covers the detail requirements for a 12-bit resolution A/D converter with complete

Contextual Info: MT9044 @ M ITEL T1/E1/0C3 System Synchronizer S E M IC O N D U C T O R Prelim inary Inform ation Features DS5058_ISSUE 1_ December 1998 S electable 1,544M Hz, 2.048M H z or 8kHz input reference signals • Provides C 1 .5, C2, C3, C4, C6, C8, C16, and

KT3170

Abstract: Samsung tv remote control circuit diagram circuit diagram of home automation using dtmf home automation using dtmf
Contextual Info: KT3170 CMOS INTEGRATED CIRCUIT LOW POWER DTMF RECEIVER The KT3170 is a complete Dual Tone Multiple Frequency DTMF receiver that is fabricated by low power CMOS and the Switched-Capacitor Filter technology. This LSI consists of band sp lit filters, which separates

CBIC-U

Abstract: SCR GTO 100 amp 1000 volt GTO IGBT DRIVER Analog Devices IGBT PNP
Contextual Info: A T & T MELEC I C 25E D • 005002b 0002575 2 ■ AT&T’S CUSTOM DESIGN CAPABILITIES: BCDMOS AND CBIC Q Using our latest technologies, custom designed integrated circuits can be created to meet the criteria of your most complex applications. As opposed to off-the-shelf devices, AT&T custom circuits offer several inherent advantages,

home automation using mobile dtmf

Abstract: KT3170 home automation using dtmf circuit diagram of home automation using dtmf
Contextual Info: KT3170 LOW POWER DTMF RECEIVER INTRODUCTION 18-CXP-300A The KT3170 is a complete Dual Tone MutUple Frequency DTMF receiver that is fabricated by low power CMOS and the Switched-Capacitor Filter technology. This LSI consists of band split Alters, which separates

DS5058

Contextual Info: @ MT9044 M ITEL T1/E1/0C3 System Synchronizer Prelim inary Inform ation S E M IC O N D U C T O R Features DS5058_ ISSUE 1_ D ecem ber 1998 S electable 1,544M Hz, 2.048M H z or 8kHz input reference signals • Ordering Information

p1087

Contextual Info: P1087 P1087 P-Channel Switch • This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 88. TO-92 D S G Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VDG

reverse-conducting thyristor

Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
Contextual Info: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate

hall 04E

Abstract: dar PLUS transformer shaded pole motor TROUBLESHOOTING GUIDE PD GTO gate drive unit mitsubishi 630F660 lug ucm m4 semiconductors cross index DMS 800 cabinet mitsubishi dc motor crane GTO gate drive unit westcode
Contextual Info: aUEH-BRADLEÏ B„He«n1352C-5.3SV*«em M anual Installation a n d M a in t e n a a c e »»B » iatkilri8Bi fes'#* M M m ^^ !!!!#^ Important User Information Because of the variety of uses for this equipment and because of the

mpf102 equivalent

Abstract: MPF102 MPF102 Transistor MPF102 circuit application
Contextual Info: MPF102 TO-92 G SD N-Channel RF Amplifier This device is designed for electronic switching Applications such as low ON resistance analog switching. Sourced from Process 50. Absolute Maximum Ratings * TA=25 degree C unless otherwise noted Symbol Parameter Value

Contextual Info: BF246B N-Channel Switch BF246B N-Channel Switch • This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. • Sourced from process 51. • See J111 for characteristics. TO-92 DGS 1. Drain 2. Gate 3. Source

Contextual Info: 74VHC4066 Quad Analog Switch tm Features General Description • Typical switch enable time: 15ns These devices are digitally controlled analog switches utilizing advanced silicon-gate CMOS technology. These switches have low “ON” resistance and low “OFF” leakages. They are bidirectional switches, thus any analog

MMBFJ270

Abstract: I8 SOT23 process 88
Contextual Info: MMBFJ270 MMBFJ270 P-Channel Switch • This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 88. G S SOT-23 D Mark: 61S 1. Drain 2. Gate 3. Source Absolute Maximum Ratings* Ta=25°C unless otherwise noted

BF246B

Abstract: J111
Contextual Info: BF246B N-Channel Switch BF246B N-Channel Switch • This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. • Sourced from process 51. • See J111 for characteristics. TO-92 DGS 1. Drain 2. Gate 3. Source

Contextual Info: MMBFJ270 MMBFJ270 P-Channel Switch G • This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 88. S SOT-23 D Mark: 61S 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* Ta=25°C unless otherwise noted

BF247A

Contextual Info: BF247A N-Channel Amplifier • • This device is designed primarily forelectronic switching applications such as low on resistance analog switching. Sourced from process 51. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted

J270

Abstract: process 88
Contextual Info: J270 J270 P-Channel Switch • This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 88. TO-92 1 1. Drain 2. Gate 3. Source Absolute Maximum Ratings* Ta=25°C unless otherwise noted

Contextual Info: 74VHC4316 Quad Analog Switch with Level Translator tm Features General Description • Typical switch enable time: 20ns These devices are digitally controlled analog switches implemented in advanced silicon-gate CMOS technology. These switches have low “ON” resistance and low

74HC4066

Abstract: 74VHC 74VHC4066 74VHC4066M 74VHC4066MTC J-STD-020B M14A MTC14 CMOS 4066 application note
Contextual Info: 74VHC4066 Quad Analog Switch Features General Description • Typical switch enable time: 15ns These devices are digitally controlled analog switches utilizing advanced silicon-gate CMOS technology. These switches have low “ON” resistance and low “OFF” leakages. They are bidirectional switches, thus any analog