GTO 100A 500V Search Results

GTO thyristor 4500V 4000A

Abstract: FAST SWITCHING THYRISTOR ST GTO thyristor driver 10A fast Gate Turn-off Thyristor GTO thyristor GTO gate drive unit mitsubishi fast thyristor 200A gate control circuits GTO 4.5kv MITSUBISHI GATE TURN-OFF THYRISTOR gto gto Gate Drive circuit
Contextual Info: IEEE Industry Applications Society Annual Meeting St. Louis, Missouri, October 12-16, 1998 A NEW GATE COMMUTATED TURN-OFF THYRISTOR AND COMPANION DIODE FOR HIGH POWER APPLICATIONS John F. Donlon*, Eric R. Motto*, M. Yamamoto*, Takahiko Iida* *Powerex, Incorporated, Youngwood, PA 15697 USA

DGT304SE13

Abstract: GTO 100A 750V DGT304SE DS460 GTO 750V 100A AN4506
Contextual Info: DGT304SE13 DGT304SE Gate Turn-off Thyristor Replaces January 2000 version, DS4609-4.0 DS4609-4.1 February 2002 APPLICATIONS KEY PARAMETERS 700A ITCM VDRM 1300V IT AV 250A dVD/dt 500V/µs diT/dt 500A/µs • Variable speed A.C. motor drive inverters (VSD-AC)

Contextual Info: DGT305RE DGT305RE Reverse Blocking Gate Turn-off Thyristor DS5519-2.0 February 2002 FEATURES KEY PARAMETERS ITCM 700A VDRM 1800V High Reliability In Service IT AV 240A • High Voltage Capability dVD/dt 500V/µs ■ Fault Protection Without Fuses diT/dt 500A/µs

UFN450

Abstract: UFN451 UFN453 GTO 100A 500V
Contextual Info: UNITRODE CORP TS 9347963 UN I T R O D E DE^I T 3 4 7 citi3 □ □ l ü b cm 7 CORP 92D |~ D 10690 POWER MOSFET TRANSISTORS UFN450 UFN451 UFN452 UFN453 500 Volt, 0.4 Ohm N-Channel T ' 3^/3 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling

Contextual Info: UniFETTM FDL100N50F N-Channel MOSFET,FRFET 500V, 100A, 0.055Ω Features Description • RDS on = 0.043Ω ( Typ.)@ VGS = 10V, ID = 50A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDL100N50F

Abstract: FDL100N50 fdl100n
Contextual Info: UniFETTM FDL100N50F N-Channel MOSFET,FRFET 500V, 100A, 0.055Ω Features Description • RDS on = 0.043Ω ( Typ.)@ VGS = 10V, ID = 50A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDH15N50

Abstract: GTO 100A 500V
Contextual Info: FDH15N50 / FDP15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt

marking 27A DIODE

Abstract: FDH27N50 GTO 100A 500V
Contextual Info: FDH27N50 27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Qg results in Simple Drive Requirement • PFC Boost • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness

IRFP450A

Abstract: diode 400V 4A Power MOSFET 50V 10A diode MARKING A1 125 diode N-channel 500V mosfet
Contextual Info: IRFP450A 14A, 500V, 0.40 Ohm, N-Channel SMPS Power MOSFET Applications Features • Switch Mode Power Supplies SMPS • Low Gate Charge Requirement • Uninterruptable Power Supply • Improved Gate, Ruggedness • High Speed Power Switching Qg results Avalanche

FDH27N50

Contextual Info: FDH27N50 27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness

FDH44N50

Contextual Info: FDH44N50 44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness

diode 8a 400v

Abstract: IRF840A 125 diode diode MARKING A1 Marking 8A n-channel 250V power mosfet n-Channel mosfet 400v Package Marking 8A SWITCH-MODE
Contextual Info: IRF840A 8A, 500V, 0.850 Ohm, N-Channel SMPS Power MOSFET Applications Features • Switch Mode Power Supplies SMPS • Low Gate Charge Requirement • Uninterruptable Power Supply • Improved Gate, Ruggedness • High Speed Power Switching Qg results Avalanche

FDH44N50

Contextual Info: FDH44N50 44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness

irfp460a

Abstract: irfp460a equivalent MOSFET IRFP460A
Contextual Info: IRFP460A 20A, 500V, 0.22 Ohm, N-Channel SMPS Power MOSFET Applications Features • Switch Mode Power Supplies SMPS • Low Gate Charge Requirement • Uninterruptable Power Supply • Improved Gate, Ruggedness • High Speed Power Switching Qg results Avalanche

Contextual Info: FDH44N50 44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness

Contextual Info: FDH44N50 44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET Applications Features • Low Gate Charge Requirement Qg results in Simple Drive • Uninterruptable Power Supply • Improved Avalanche and Dynamic dv/dt Ruggedness • High Speed Power Switching • Improved rDS ON

Application of irf840

Abstract: TRANSISTOR mosfet IRF840 datasheet irf840 mosfet diode 400V 4A irf840 equivalent power supply IRF840 APPLICATION IRF840 MOSFET irf840 power supply transistor irf840 IRF840 and its equivalent
Contextual Info: IRF840 Data Sheet January 2002 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Features • 8A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFW/I820A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V

IRF820A

Contextual Info: $GYDQFHG 3RZHU 026 7 IRF820A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V

FDB15N50

Abstract: fdb fairchild FDH15N50 FDP15N50
Contextual Info: FDH15N50 / FDP15N50 / FDB15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt

IRF820S

Abstract: diode Rl 257
Contextual Info: $GYDQFHG 3RZHU 026 7 IRF820S FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V

TRANSISTOR mosfet IRF840

Abstract: IRF840 application note Switching Application of irf840
Contextual Info: IRF840 Data Sheet Title F84 bt A, 0V, 50 m, 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFR/U420A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.3 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V

FDB15N50

Abstract: FDH15N50 FDP15N50
Contextual Info: FDH15N50 / FDP15N50 / FDB15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt