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    GT60PR21
    Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Datasheet

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    GT60PR21

    Abstract: On semiconductor power IGBT reliability report failure report IGBT GT60
    Contextual Info: GT60PR21 Discrete IGBTs Silicon N-Channel IGBT GT60PR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


    Original
    GT60PR21 GT60PR21 On semiconductor power IGBT reliability report failure report IGBT GT60 PDF

    Contextual Info: GT60PR21 Discrete IGBTs Silicon N-Channel IGBT GT60PR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


    Original
    GT60PR21 PDF