GT50JR21 Search Results
GT50JR21 Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy | 
|---|---|---|---|---|---|
| GT50JR21 |   | IGBT, 600 V, 50 A, Built-in Diodes, TO-3P(N) | Datasheet | 
GT50JR21 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| GT50JR21 |   | Japanese - Transistors | Original | 313.65KB | 7 | ||
| GT50JR21 |   | Transistors | Original | 206.14KB | 7 | ||
| GT50JR21(STA1,E,S) |   | PB-F IGBT / TRANSISTOR TO-3PN(OS | Original | 206.68KB | 7 | 
GT50JR21 Price and Stock
| Toshiba America Electronic Components GT50JR21(STA1,E,S)IGBT 600V 50A TO-3P | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | GT50JR21(STA1,E,S) | Tube | 24 | 1 | 
 | Buy Now | |||||
|   | GT50JR21(STA1,E,S) | Tray | 12 Weeks | 25 | 
 | Buy Now | |||||
|   | GT50JR21(STA1,E,S) | 119 | 
 | Buy Now | |||||||
|   | GT50JR21(STA1,E,S) | 196 | 1 | 
 | Buy Now | ||||||
| Toshiba America Electronic Components GT50JR21STA1ESSILICON N-CHANNEL DISCRETE IGBT Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | GT50JR21STA1ES | 150 | 
 | Get Quote | |||||||
| Toshiba America Electronic Components GT50JR21STA1SILICON N-CHANNEL DISCRETE IGBT Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | GT50JR21STA1 | 100 | 
 | Get Quote | |||||||
GT50JR21 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| GT50JR21Contextual Info: GT50JR21 Discrete IGBTs Silicon N-Channel IGBT GT50JR21 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2) | Original | GT50JR21 GT50JR21 | |
| Contextual Info: GT50JR21 Discrete IGBTs Silicon N-Channel IGBT GT50JR21 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2) | Original | GT50JR21 | |
| Contextual Info: GT50JR21 Discrete IGBTs Silicon N-Channel IGBT GT50JR21 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2) | Original | GT50JR21 | |
| Contextual Info: GT50JR21 ディスクリートIGBT シリコンNチャネルIGBT GT50JR21 1. 用途 • 電流共振インバータスイッチング専用 注意:本資料に掲載されている製品を上記以外の用途に使用しないでください。 2. 特長 | Original | GT50JR21 |