GSSR 300 Search Results

Contextual Info: m 2N6764 \ \ N-CHANNEL POWER MOSFET DESCRIPTION: The 2N6764 is Designed for General Purpose Amplifier and Switching Circuit Applications. MAXIMUM RATINGS Id 38 A @ Tc = 25 °C 24 A @ T C= 100 °C V ds 100 V PACKAGE STYLE TO -204A E 1.550 - 39.37 — MAX

CHM1273GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CHM1273GP CURRENT 2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small surface mounting type. SC-59

CHM3055LAPAGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM3055LAPAGP CURRENT 12 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE

Contextual Info: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP15N05E Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 15 AMPERES RDS(on) - 0.1 OHM

IRFY320

Abstract: LE17
Contextual Info: bOE D • filBBlfi? DQQOSSb fiTfi ■ S f l L B SENELAB PLC ^ T ‘3 ^ - I V SEM ELAB IRFY320 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS r y FEATURES • HERMETIC T 0 2 2 0 METAL OR CERAMIC SURFACE M O U N T PACKAGES

audio Amp. mosfet 1000 watt

Abstract: OM8P20A QM803 OM7P50A
Contextual Info: OMNI REL .CÖRP IME 0 I 1,70^073 00005^2 T I OM7P50A OM8P2QA POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-254 PACKAGE T ^ wêssêsiêu 200V/500V, UpTo 8, Amp*, P-Channel MOSFET v- -‘ A - - -* ^ ~ v'J} J, FEATURES Isolated Hermetic Metal Package P-Channel Fast Switching, Low Drive Current

Contextual Info: 3 7E SEMELAB LTD 0133107 D QQQQSm Q E G3 1 1987 SEMELAB • x fc BUZ 20 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm u _ 10.3 iu . J wi 13~*1 —* max. .I m 0X- -*]3.6K+|3.6|* m 4.5ma« 5.9 min. , i 15.8 max. L.}.,- APPLICATIONS • DC/DC CONVERTERS

Contextual Info: u , L/ nc. ^s.mi-Conducto'i TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP12N08L MTP12N10L Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS

2N7002 MARKING

Abstract: 2N7002 MARKING 702 2N7002
Contextual Info: WEITRON 2N7002 Small Signal MOSFET N-Channel 3 DRAIN P b Lead Pb -Free 3 1 2 1 GATE SOT-23 2 SOURCE Maximum Ratings (TA=25°C Unless Otherwise Specified) Rating Symbol Value Unit Drain Source Voltage VDSS 60 V Drain Gate Voltage(RGS = 1.0MΩ) VDGR 60 V Drain Current

Contextual Info: zSzmL-donductoi ZPioaucti, Line. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX; (973) 376-8960 MTP2N80 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS M*MN'. -I*-! •H B h- 1 ±

NDB4060L

Abstract: NDP4060L
Contextual Info: & Na t i o n a I Semiconductor” A p ril 1996 NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode • 15A, 60V. RDS 0NI = O .m @ VGS = 5V power field effect transistors are produced using

bu 517

Abstract: NDS352P
Contextual Info: March 1996 N ational Semiconductor" NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS

Contextual Info: 37E D SENELAB LTD Ö1331Ö? 0 0 0 0 2 7 3 T-39-11 SEMELAB ¡qoo £ 0 / >S//¿ g BUZ 74 MOS POWER MECHANICAL DATA N-Channel Enhancement M ode Dimensions in mm _10.3_ mux. A .5 m o x 1.3 -W 3.6H- J L . 2. 8 5.9 TÏ mi n. APPLICATIONS 5.1 15.8 X mÌQ ax. L J .J

P6030L

Abstract: 52A zener
Contextual Info: g ^ IR Ç H I^ M IC D N D U C T Q R June1996 tm NDP6030L / NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

NDT410EL

Contextual Info: & June 1996 National Semi conduct or " NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

Contextual Info: May 1998 F A IR C H IL D iM IC D N D U C T O R ! FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high

Contextual Info: F /\IR G H II_ D N ovem ber 1997 MlC O N D U C T O R FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell

125OC

Abstract: 2N7002
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR VOLTAGE 60 Volts CURRENT 115 mAmp PACKAGE SOT-23 DESCRIPTION • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS

MOSFET IRF 570

Contextual Info: February 1996 FAIRCHILD IM IC D N D U C T D R tm NDS9948 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

fdb fairchild

Abstract: Z2150 fdb7030l FDP7030L
Contextual Info: | |_ | | N ovem ber 1997 S E M IC O N D U C T O R m FDP7030L / FDB7030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T h ese N -C hannel logic level en hance m en t m ode pow er field effe ct transistors are produce d using Fairchild's proprietary,

Contextual Info: F A I R C H M arch 1998 I L D M IC O N D U C TO R tm FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperS0T -3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

NDB7060

Abstract: NDP7060
Contextual Info: Na t io n a l Semiconductor" June 1996 NDP7060/ NDB7060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m ode p o w e r field effect tran sisto rs are produced using National's pro p rie ta ry, high cell density, DMOS technology.

Contextual Info: February 1996 N NDS9405 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Chgnnel enhancement mode power field effect • -4.3A, -20V. RD8 ON| = 0.10Q @ VGS-10V transistors are produced using National's proprietary, high cell

t2955

Contextual Info: September 1996 FAIRCHILD S E M IC O N D U C T O R -M NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very