GSSR 300 Search Results

Contextual Info: NJF6510 N-CHANNEL, J-FET DEPLETION MODE TRANSISTOR Screened in reference to MIL-PRF-19500 DESCRIPTION The NJF6510 is ideal for functioning as a VHF and a small signal amplifier. This part number is also an equivalent to the MX2N3822. Important: For the latest information, visit our website http://www.microsemi.com.

MS2N3821

Contextual Info: NJF6514 and NJF6515 N-Channel, J-FET Depletion Mode Transistor Screened in reference to MIL-PRF-19500 DESCRIPTION The NJF6514 and NJF6515 are ideal for functioning as very high frequency VHF small signal amplifiers. The NJF6514 part number is similar to the MX2N3821. The NJF6515 part number

rbc 630

Abstract: DIN 43650 c DIN 43650 280 490-440 732 384-001 HIRSCHMANN DIN 43650 3 pe 43650C 6 -HIRSCHMANN connector 300 series 933 023-100 HIRSCHMANN DIN 43650
Contextual Info: GDS/GDSN Series Industrial standard/DIN 43650-C Cable socket, self-assembly Product features • for miniature valves, for example electro-magnetic pneumatic valves Variations • contact arrangement according to DIN 43650-C contact distance 8 mm • contact arrangement according

3n214

Abstract: 3n215 3N217
Contextual Info: TYPES 3N 2U THRU 3N217 N-CHANNEL DEPLETION-TYPE INSULATED-GATE FIELD-EFFECT TRANSISTORS B U L L E T I N N O . D L -S 7 3 1 1 9 9 1 . M A R C H 1 9 7 3 DIODE-PROTECTED DEPLETION-TYPE MOS SILICON TRANSISTORS For Low-Power Chopper or Switching Applications •

Contextual Info: m 2N6764 \ \ N-CHANNEL POWER MOSFET DESCRIPTION: The 2N6764 is Designed for General Purpose Amplifier and Switching Circuit Applications. MAXIMUM RATINGS Id 38 A @ Tc = 25 °C 24 A @ T C= 100 °C V ds 100 V PACKAGE STYLE TO -204A E 1.550 - 39.37 — MAX

CHM1273GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CHM1273GP CURRENT 2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small surface mounting type. SC-59

CHM1592GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CHM1592GP CURRENT 500 mAmpere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE

CHM8311JGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM8311JGP CURRENT 7.9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. SO-8

CHM3055ZGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM3055ZGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 4.0 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-73/SOT-223 FEATURE

CHM3055LAPAGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM3055LAPAGP CURRENT 12 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE

CHM4311JGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM4311JGP CURRENT 9.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. SO-8

lateral mosfet audio amplifier

Abstract: OM6009SA OM6011SA OM6109SA OM6110SA OM6111SA OM6112SA
Contextual Info: OM6009SA OM6011SA OM6109SA OM6111SA OM601 OSA QM6012SA OM6110SA OM6112SA POWER MOSFETS IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, Up To 22 Amp, N-Channel MOSFET In Hermetic Metal Package, With Optional Zener Gate Clamp Protection FEATURES • Isolated Hermetic Metal Package

2N3823 equivalent

Abstract: 2N3822 2N3823 2n3821 2N3822 equivalent 2N3823 DATASHEET depletion mode mosfet 100 MHz 2N3822 JAN 2N3821 JAN
Contextual Info: Technical Data 2N3821 JAN, JTX, JTXV 2N3822 JAN, JTX, JTXV 2N3823 JAN, JTX, JTXV MIL-PRF QPL DEVICES POWER MOSFET N CHANNEL DEPLETION MODE Processed per MIL-PRF-19500/375 MAXIMUM RATINGS Parameters / Test Conditions Gate-Source Voltage Drain-Source Voltage

2N3823 equivalent

Abstract: 2N3822 equivalent 2N3822 2N3823 2N3821 2N3823 fet datasheet
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET DEPLETION MODE Equivalent to MIL-PRF-19500/375 DEVICES LEVELS 2N3821 2N3822 2N3823 MQ = JAN Equivalent

CHM4953JGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM4953JGP CURRENT 4.9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. SO-8

CHM8435AJGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM8435AJGP CURRENT 7.9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. SO-8

L014A

Abstract: 00D05 IRFY130
Contextual Info: bOE D • B1331Ô7 DOOOSSG SEMELAB 3ÔT ■ S M L B PLC SEMELAB 'T 'Z °\ -w IRFY130 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS FEATURES • HERMETICT0220 METALOR CERAMIC SURFACE MOUNT PACKAGES • SCREENING OPTIONS AVAILABLE

cfw SOT23

Abstract: Q4006
Contextual Info: F A IR C H IL D SEM ICONDUCTO R J u ly 1 9 9 7 tm ADVANCE INFORMATION FDQ4006N Dual Common Drain N-Channel Enhancement Mode Field El Transistor General Features Description SOIC-14 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

Contextual Info: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP15N05E Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 15 AMPERES RDS(on) - 0.1 OHM

IRFY320

Abstract: LE17
Contextual Info: bOE D • filBBlfi? DQQOSSb fiTfi ■ S f l L B SENELAB PLC ^ T ‘3 ^ - I V SEM ELAB IRFY320 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS r y FEATURES • HERMETIC T 0 2 2 0 METAL OR CERAMIC SURFACE M O U N T PACKAGES

2N6661

Contextual Info: <=Sf.mi- 2oncluctoi -ITTELEPHONE: (201 376-2922 (212) 227-6005 TELEX: 13-8720 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel Enhancement Mode MOSPOWER PRODUCT SUMMARY APPLICATIONS • Switching Regulators Part Number BVDSS Volts rDS(ON) • Converters

CHM4435AJGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM4435AJGP CURRENT 8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. SO-8

3n128

Contextual Info: T Y P E 3N128 N -C H A N N E L IN S U LA T ED -G A T E D E P LE T IO N -T Y P E F IE LD -E FF E C T TR A N S IS TO R B U L L E T IN N O . D L S 7 3 1 2 0 0 6 . M A R C H 1973 DEPLETION-TYPE MOS SILICON TRANSISTOR For Use in VHF Amplifier Applications to 300 MHz

Contextual Info: HbE D b3b?554 DORifiT? 1 « n O T b 1 z3^~0 Í MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA Édbà DMO hum MHM8N20HX, HXV (N-Channel) MHM8P20HX, HXV (P-Channel) Power Field-Effect Transistors Discrete Military Operation N-Channel/F-Channel Enhancement-Mode Complementary