GS8321Z36 Search Results

Contextual Info: GS8321Z18/32/36E-250/225/200/166/150/133 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features • User-configurable Pipeline and Flow Through mode • NBT No Bus Turn Around functionality allows zero wait

Contextual Info: GS8321Z18/32/36E-250/225/200/166/150/133 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and

GS8321Z18AD-200V

Abstract: 8321ZXXA_V
Contextual Info: GS8321Z18/32/36AD-xxxV 333 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O 36Mb Pipelined and Flow Through Synchronous NBT SRAM 165-Bump BGA Commercial Temp Industrial Temp Features • User-configurable Pipeline and Flow Through mode • NBT No Bus Turn Around functionality allows zero wait

Contextual Info: GS8321Z18/32/36E-250/225/200/166/150/133 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features • User-configurable Pipeline and Flow Through mode • NBT No Bus Turn Around functionality allows zero wait

Contextual Info: Preliminary GS8321Z18/32/36AD-400/375/333/250/200/150 400 MHz–150 MHz 1.8 V, 2.5 V, or 3.3 V VDD 1.8 V, 2.5 V, or 3.3 V I/O 36Mb Pipelined and Flow Through Synchronous NBT SRAM 165-Bump BGA Commercial Temp Industrial Temp Features Because it is a synchronous device, address, data inputs, and

Contextual Info: GS8321Z18/32/36AD-400/375/333/250/200/150 400 MHz–150 MHz 1.8 V, 2.5 V, or 3.3 V VDD 1.8 V, 2.5 V, or 3.3 V I/O 36Mb Pipelined and Flow Through Synchronous NBT SRAM 165-Bump BGA Commercial Temp Industrial Temp Features Because it is a synchronous device, address, data inputs, and

Contextual Info: GS8321Z18/32/36E-250/225/200/166/150/133 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 1.8 V, 2.5 V, or 3.3 V VDD 1.8 V, 2.5 V, or 3.3 V I/O Because it is a synchronous device, address, data inputs, and

Contextual Info: Preliminary GS8321Z18/32/36AD-400/375/333/250/200/150 400 MHz–150 MHz 1.8 V, 2.5 V, or 3.3 V VDD 1.8 V, 2.5 V, or 3.3 V I/O 36Mb Pipelined and Flow Through Synchronous NBT SRAM 165-Bump BGA Commercial Temp Industrial Temp Features Because it is a synchronous device, address, data inputs, and

PQ-32/CXA1571M/N

Contextual Info: GS8321Z18/32/36E-xxxV 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the

K7A803609B-PC25

Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
Contextual Info: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15

IS61LF51232-8

Abstract: IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E 167ML IS61NLP25636A-200TQL IS61QDB22M36 IS61LPS51236-150B IS61LV5128L-12T
Contextual Info: ISSI * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor # - Connect pin 14 FT pin to Vss IS61DDB22M36-167M3 IS61DDB22M36-167M3L IS61DDB22M36-167ML IS61DDB22M36-200M IS61DDB22M36-200M3 IS61DDB22M36-200M3L IS61DDB22M36-200ML

Contextual Info: GS8321Z18/32/36AD-xxxV 333 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O 36Mb Pipelined and Flow Through Synchronous NBT SRAM 165-Bump BGA Commercial Temp Industrial Temp Features • User-configurable Pipeline and Flow Through mode • NBT No Bus Turn Around functionality allows zero wait

Contextual Info: GS8321Z18/32/36E-250/225/200/166/150/133 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and

Contextual Info: GS8321Z18/32/36AD-400/375/333/250/200/150 400 MHz–150 MHz 2.5 V, or 3.3 V VDD 2.5 V, or 3.3 V I/O 36Mb Pipelined and Flow Through Synchronous NBT SRAM 165-Bump BGA Commercial Temp Industrial Temp Features Because it is a synchronous device, address, data inputs, and

Contextual Info: GS8321Z18/32/36E-250/225/200/166/150/133 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 1.8 V, 2.5 V, or 3.3 V VDD 1.8 V, 2.5 V, or 3.3 V I/O Because it is a synchronous device, address, data inputs, and

Contextual Info: Preliminary GS8321Z18/32/36AD-xxxV 333 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O 36Mb Pipelined and Flow Through Synchronous NBT SRAM 165-Bump BGA Commercial Temp Industrial Temp Features • User-configurable Pipeline and Flow Through mode • NBT No Bus Turn Around functionality allows zero wait

GS8321Z18E-250I

Abstract: GS8321Z18E-133 GS8321Z18E-150 GS8321Z18E-166 GS8321Z18E-200 GS8321Z18E-225 GS8321Z18E-250 GS8321Z32E-250
Contextual Info: GS8321Z18/32/36E-250/225/200/166/150/133 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and

GS8321Z18E-225

Abstract: GS8321Z18E-250 GS8321Z18E-166 GS8321Z18E-200
Contextual Info: GS8321Z18/32/36E-250/225/200/166/150/133 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features • User-configurable Pipeline and Flow Through mode • NBT No Bus Turn Around functionality allows zero wait

GS8321Z36AD-400

Contextual Info: GS8321Z18/32/36AD-400/375/333/250/200/150 400 MHz–150 MHz 2.5 V, or 3.3 V VDD 2.5 V, or 3.3 V I/O 36Mb Pipelined and Flow Through Synchronous NBT SRAM 165-Bump BGA Commercial Temp Industrial Temp Features Because it is a synchronous device, address, data inputs, and

Contextual Info: GS8321Z18/32/36E-xxxV 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the

GS8321Z18E-133

Abstract: GS8321Z18E-150 GS8321Z18E-166 GS8321Z18E-200 GS8321Z18E-225 GS8321Z18E-250 GS8321Z32E-250
Contextual Info: GS8321Z18/32/36E-250/225/200/166/150/133 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and

Contextual Info: GS8321Z18/32/36E-xxxV 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the

GS8321Z18E-133

Abstract: GS8321Z18E-150 GS8321Z18E-166 GS8321Z18E-200 GS8321Z18E-225 GS8321Z18E-250 GS8321Z32E-250
Contextual Info: GS8321Z18/32/36E-250/225/200/166/150/133 165-Bump FP-BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 1.8 V, 2.5 V, or 3.3 V VDD 1.8 V, 2.5 V, or 3.3 V I/O Because it is a synchronous device, address, data inputs, and

CY7C1338-100AXC

Abstract: gvt7164d32q-6 CY7C1049BV33-12VXC CY7C1363C-133AC CY7C1021DV33-12ZXC CY7C1460AV25-200AXC CY7C1338G-100AC CY7C1041V33-12ZXC CY7C1460V33-200AXC CY7C1021DV33-10ZXC
Contextual Info: CYPRESS / GALVANTECH # - Connect pin 14 FT pin to Vss CY7C1019BV33-15VC GS71108AJ-12 & - Does not support 1.8V I/O CY7C1019BV33-15VXC GS71108AGJ-12 * - Tie down extra four I/Os with resistor CY7C1019BV33-15ZC GS71108ATP-12 CY7C1019BV33-15ZXC GS71108AGP-12