GS SH 2 12 D Search Results

74LS148P

Abstract: pin diagram priority encoder 74ls148 74LS148 TC74HC148AF TC74HC148AP
Contextual Info: TOSHIBA TC74HC148AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC148AP, TC74HC148AF 8 - TO - 3 LINE PRIORITY ENCODER The TC74HC148A is a high speed CMOS 8 - to - 3 LINE ENCODER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

2SK2146

Contextual Info: TOSHIBA 2SK2146 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII .5 2 S K 2 1 46 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U ST R IA L A PPLIC A TIO N S U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

MARKING AJ5

Contextual Info: TO SH IBA TPC8204 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-M OSII TPC8204 LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS SOP-8. □ □ □ □ I • Low Drain-Source ON Resistance

DIODE ED 34

Contextual Info: TO SHIBA 2SK2350 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2350 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0 .3

IRFP260

Abstract: t2j diode CD 1517 PD97 L708
Contextual Info: PD-9.755 International frëRj Rectifier IRFP260 HEXFET P o w e r M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V oss - 200V

CD 1517

Abstract: IRFIBC20G BY I.R 600V IRFIBC20G
Contextual Info: PD-9.850 International S Rectifier IRFIBC20G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist - 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V dss - 600V ^DS on - 4 -4 ^ lD = 1.7A

irfd123

Abstract: 2501a IRFD120R IRFD121R IRFD122R IRFD123R IRF012
Contextual Info: Rugged Pow er M O S F E T s_ File Number 2036 IRFD120R, IRFD121R, IRFD122R, IRFD123R Avalanche Energy Rated N-Channel Power MOSFETs 1.3A and 1.1A, 60V-100V ros on = 0.300 and 0.400 N -C H A N N E L E N H A N C E M E N T M O D E Features:

IRF624

Abstract: RG-185 9472
Contextual Info: PD-9.472B International S Rectifier IRF624 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 250V R DS on = 1 - 1 ^ lD = 4.4A Description Third Generation HEXFETs from International Rectifier provide the designer

2SK3068

Abstract: mini tv 48 u1j
Contextual Info: T O S H IB A 2SK3068 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK3068 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U ST R IA L A PPLIC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE TO-220FL

TOSHIBA TV IC regulator

Contextual Info: TOSHIBA 2SK2842 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2842 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance

Contextual Info: TO SH IBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ380 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ± 0.3 . 03.2 ± 0.2

IRF820

Abstract: top 258 pn
Contextual Info: PD-9.3240 International S Rectifier IRF820 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 500V ^DS on = lD = 2.5A Description DATA SH EETS Third Generation HEXFETs from International Rectifier provide the designer

IRF610

Abstract: power MOSFET IRF610 33a marking
Contextual Info: International S Rectifier P D -9.3261 IRF610 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V R DS on = 1 lD = 3.3A Description DATA SH EETS

Contextual Info: T O S H IB A 2SJ412 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm TO-220FL 4 V Gate Drive

Contextual Info: T O S H IB A 2SJ412 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm TO-220FL 4 V Gate Drive

L67c

Abstract: 2-10P1B 2SK2661
Contextual Info: T O S H IB A 2SK2661 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2661 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance

2SK2350

Contextual Info: TO SH IBA 2SK2350 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2350 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 10 ±0.3

USSR DIODE

Abstract: IRF730
Contextual Info: PD-9.308K International r]Rectifier IRF730 HEXFET® Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 400V ^ D S o n = 1 lD = 5 .5A Description D ATA

2SK2350

Contextual Info: TOSHIBA 2SK2350 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2350 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3

2N6901

Abstract: mosfet 2n6788 2N6802 metal detector WITH IC 555 550D 2N6756 LH0063 QPL-19500
Contextual Info: Standard Power MOSFETs 2N6802 File Number 1905 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 3.5A, 500V r D S o n —"1.50 N-CHANNEL ENHANCEMENT MODE o Features: • m ■ ■ ■ SOA is power-dissipation limited

Contextual Info: International ioR Rectifier M Ö 55452 HEXFET P o w e r M O S F E T IN T E R N A T I O N A L • • • • • IIN R 0 D 1 4 cJbfl S B T PD-9.610A IRFBE20 R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling

2SK1746

Contextual Info: T O SH IB A ^□^7250 GGE334b 57T TO SH IBA FIELD EFFECT TRANSISTOR 2SK1746 SILICON N CHANNEL M OS TYPE tt- M O S II 2 S K 1 746 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. U n it in mm TO-220FL DC-DC CONVERTER AND M OTOR DRIVE APPLICATIONS. • Low D rain-Source ON R esistance

Contextual Info: T O SH IB A 2SK3017 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSHI 2SK3017 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance

transistor Sh 550

Abstract: transistor 2sk 2232
Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2232 DATA SILICON N CHANNEL MOS TYPE L2- 7 T - M O S V (2SK 2232) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE