GS SH 2 12 D Search Results

74LS148P

Abstract: pin diagram priority encoder 74ls148 74LS148 TC74HC148AF TC74HC148AP
Contextual Info: TOSHIBA TC74HC148AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC148AP, TC74HC148AF 8 - TO - 3 LINE PRIORITY ENCODER The TC74HC148A is a high speed CMOS 8 - to - 3 LINE ENCODER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

MARKING AJ5

Contextual Info: TO SH IBA TPC8204 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-M OSII TPC8204 LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS SOP-8. □ □ □ □ I • Low Drain-Source ON Resistance

DIODE ED 34

Contextual Info: TO SHIBA 2SK2350 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2350 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0 .3

IRFP260

Abstract: t2j diode CD 1517 PD97 L708
Contextual Info: PD-9.755 International frëRj Rectifier IRFP260 HEXFET P o w e r M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V oss - 200V

irfd123

Abstract: 2501a IRFD120R IRFD121R IRFD122R IRFD123R IRF012
Contextual Info: Rugged Pow er M O S F E T s_ File Number 2036 IRFD120R, IRFD121R, IRFD122R, IRFD123R Avalanche Energy Rated N-Channel Power MOSFETs 1.3A and 1.1A, 60V-100V ros on = 0.300 and 0.400 N -C H A N N E L E N H A N C E M E N T M O D E Features:

IRF624

Abstract: RG-185 9472
Contextual Info: PD-9.472B International S Rectifier IRF624 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 250V R DS on = 1 - 1 ^ lD = 4.4A Description Third Generation HEXFETs from International Rectifier provide the designer

2SK3068

Abstract: mini tv 48 u1j
Contextual Info: T O S H IB A 2SK3068 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK3068 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U ST R IA L A PPLIC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE TO-220FL

Contextual Info: TO SH IBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ380 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ± 0.3 . 03.2 ± 0.2

IRF820

Abstract: top 258 pn
Contextual Info: PD-9.3240 International S Rectifier IRF820 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 500V ^DS on = lD = 2.5A Description DATA SH EETS Third Generation HEXFETs from International Rectifier provide the designer

Contextual Info: TO SH IB A TPD7000F TOSHIBA INTELLIGENT PO W ER DEVICE SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TPD7000F 4-CHANNEL LOW-SIDE PO W ER MOS FET DRIVER TPD7000F is a power MOS FET driver for low-side switching. This 4-channel driver with a built-in circuit is

USSR DIODE

Abstract: IRF730
Contextual Info: PD-9.308K International r]Rectifier IRF730 HEXFET® Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 400V ^ D S o n = 1 lD = 5 .5A Description D ATA

2SK1746

Contextual Info: T O SH IB A ^□^7250 GGE334b 57T TO SH IBA FIELD EFFECT TRANSISTOR 2SK1746 SILICON N CHANNEL M OS TYPE tt- M O S II 2 S K 1 746 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. U n it in mm TO-220FL DC-DC CONVERTER AND M OTOR DRIVE APPLICATIONS. • Low D rain-Source ON R esistance

CD 1517

Abstract: IRFP9240
Contextual Info: PD-9.481C International S Rectifier IRFP9240 HEXFET P o w e r M O S F E T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Description

2SK2824

Contextual Info: TOSHIBA 2SK2824 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2824 FOR PORTABLE EQUIPMENT Unit in mm HIGH SPEED SWITCH APPLICATIONS 2.1 ± 0.1 ANALOG SWITCH APPLICATIONS 1.25 ± 0.1 3 1 • High Input Impedance • 1.5V Gate Drive • Low Gate Threshold Voltage

transistor 1211

Abstract: transistor Sh 550
Contextual Info: TOSHIBA 2SK2889 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2889 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • • • •

*k2952

Abstract: 2SK2952
Contextual Info: TOSHIBA 2SK2952 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2952 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR APPLICATIONS • Low Drain-Source ON Resistance e d s (o n )= °-4 îî

Contextual Info: ÜÛ55452 ÜGlS2Sb 32e! • INR International fc Rectifier IRFIBE20G HEXFET® Power MOSFET • • • • • p d -9.853 b5E D INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating

e1218

Contextual Info: U S ilic o n ix SÌ9942DY A M e m b e r o f th e T e m ic G ro u p Dual Enhancement-Mode MOSFETs N- and P-Channel Product Summary VDS <v) N-Channel r DS(on) (Q ) 0.125 20 P-Channel -2 0 @ VGs = 10 V Id (A) ±3.0 0.250 @ VGS = 4.5 V ±2.0 0.200 @ V GS= - 1 0 V

RG-910

Abstract: IRFI840 aj 312 CD 1517 IRFI840G
Contextual Info: International S Rectifier PD-9.642A IRFI840G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V DSS = 5 0 0 V ^DS on = 0 -8 5 Q l D = 4 .6 A

2-10P1B

Abstract: 2SK2608
Contextual Info: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance : Rd S (ON)“ 3.730 (Typ.)

SI9952

Abstract: EMIC SI9952DY
Contextual Info: SÌ9952DY 17Siliconix A M ember o f th e T emic G roup Dual Enhancement-Mode MOSFETs N- and P-Channel Product Summary Vds (V) N-Channel (Q ) 25 P-Channel Id (A) r D S(on) -2 5 0.10 @ VGS = 10 V ±3.5 0.15 @ V GS = 4.5 V ±2.0 0.25 @ V GS = - 1 0 V ±2.3

IRFPC50

Contextual Info: PD-9.656A International SS Rectifier IRFPC50 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 6 0 0 V ^D S on - 0 . 6 0 Q

sn8414

Abstract: 54LS148 SN 74147 SN84147 SN74147 IC TTL 7408 free BCD 7408 BCD 8421 N54148 IC 74147 application note
Contextual Info: TTL uei TYPES SN84147, SNS4148, SN54LS147, SN54LS148, SN74147, SN74148 TIM98e7KSN74iS147. SN74LS148 MSI 10-LINE-TO-4-LINE AND 8-U N E -T 0-3-U (IE PRIORITY ENCODERS B U L L E T IN N O . O L -S 7 7 1 1 7 2 7 , O C T O B E B 1 9 7 6 — R E V IS E D A U G U S T 1 9 7 7

Contextual Info: NOTES: 1. MATERIALS AND FINISHES: BODY - BRASS, NICKEL PLATING CONTACT - BRASS,SILVER PLATING INSULATOR - PTFE ELECTRICAL: A. IMPEDANCE: 50 OHM B. FREQUENCY RANGE: DC 0 - 4 GHz C. DIELECTRIC WITHSTANDING VOLTAGE: 1500 VRMS, MIN. MECHANICAL: A. DURABILITY: