GS 9510 Search Results

IRF3710SPBF

Abstract: AN-994 IRF3710 IRF3710L IRF3710LPBF IRF3710S
Contextual Info: PD - 95108A IRF3710SPbF IRF3710LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A

Contextual Info: PD - 95108A IRF3710SPbF IRF3710LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A

IRF3710SPBF

Abstract: AN-994 IRF3710 IRF3710L IRL3103L IRF3710LPBF IRF3710S
Contextual Info: PD - 95108 IRF3710SPbF IRF3710LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A

2N6759

Abstract: JANTX 2n
Contextual Info: POWER MOSFET TRANSISTORS , JTX JTXV» 400 Volt, 1.0 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES • Fast Switching

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Logic level FET FEATURES PHP65N06LT, PHB65N06LT SYMBOL • ’Tr enc h’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics

Contextual Info: PD - 95100 IRF530NSPbF IRF530NLPbF Æ HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 100V RDS on = 90m"

IRF3710SPBF

Abstract: TP1100 IRF3710LPBF IRF3710S
Contextual Info: PD - 95108 IRF3710SPbF IRF3710LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A

IRF3710SPBF

Abstract: IRF3710 IRF3710L AN-994 IRL3103L IRF3710LPBF IRF3710S
Contextual Info: PD - 95108 IRF3710SPbF IRF3710LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A

AN-994

Abstract: IRF1010N IRF1010NL IRL3103L 43a 504 pcb mounted
Contextual Info: PD - 95103 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010NSPbF IRF1010NLPbF l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ

IRF530N applications

Abstract: AN-994 IRF530N IRF530NL IRL3103L 4.5v to 100v input regulator
Contextual Info: PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 100V RDS on = 90mΩ

AN-994

Abstract: IRF530N IRF530NL IRL3103L
Contextual Info: PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 100V RDS on = 90mΩ

2N6761

Abstract: UNITRODE TRANSISTORS SA-A
Contextual Info: POWER MOSFET TRANSISTORS AJTX JTXV 500 Volt, 1.5 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES • Fast Switching

Contextual Info: PD - 95103 l IRF1010NSPbF IRF1010NLPbF l HEXFETÆ Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description D VDSS = 55V RDS on = 11m!

marking code 43a

Abstract: 43A MARKING CODE AN-994 IRF1010N IRF1010NL IRL3103L 43a 504
Contextual Info: PD - 95103 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010NSPbF IRF1010NLPbF l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ

2N6764 JANTX

Abstract: 2N6763 2n6764
Contextual Info: POWER MOSFET TRANSISTORS , JTX JTXV¡¡Jgg 100 Volt, 0.055 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES • Fast Switching

ufnd123

Abstract: UFND120
Contextual Info: POWER MOSFET TRANSISTORS UFND120 100 Volt, 0.3 Ohm N-Channel FEATURES • For Automatic Insertion • Compact, End Stackable • Fast Switching • Low Drive Current • Easily Paralleled • No Second Breakdown • Excellent Temperature Stability DESCRIPTION

2N6758

Abstract: 6757
Contextual Info: UNITRODE CORP 9347963 t UNITRODE CORP ~~~ 92D POWER MOSFET TRANSISTORS 2 0 0 V o lt, 0 .4 o o i c mt , s 1 04 96 D j ; j t x , j t x v 2N6758 T - ' b l - i i O h m N -C h a n n e l " DESCRIPTION The Unltrode power MOSFET design utilizes the most advanced technology available.

2N6756 JAN

Abstract: 2N6755
Contextual Info: POWER MOSFET TRANSISTORS , ,TX JTXVIñl?!! J, JTX, JTXV 2N6756 100 Volt, 0.18 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.

Contextual Info: POWER MOSFET TRANSISTORS 4 0 0 Volt, 1.8 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability UFN322 UFN323 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.

2N6770

Contextual Info: T2 UNITRODE CORP 9347963 UNITRODE 0G1D5E0 4 ï ~ CORP 92D 10520 POWER MOSFET TRANSISTORS 2N6769 J, JTX, JTXV 2N6770 500 Volt, 0.4 Ohm N-Channel FEA TU RES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature Stability

2N6756

Abstract: 2N6755
Contextual Info: UNITRODE CORP TS 9347963 UNITRODE CORP '' P O W E R M O S F E Î DE § ^ 3 4 7 ^ 3 920 T R A N S I S T O R S 10492 00104^2 0 T , JTX, JTXV ¡ ¡ ¡ g * 100 Volt, 0.18 Ohm N-Channel DESCRIPTION The Unitrode power M OSFET design utilizes the most advanced technology available.

Contextual Info: UNITRO.DE corp 9347963 U N ïT r ÔDE CORP 92D 10500 D /-3 ?-// POWER MOSFET TRANSISTORS , JTX,JTXVg « 400 Volt, 1.0 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability

2N6767

Contextual Info: POWERMOSFET- TRANSISTORS , JTX JTXV¡¡Jgg 400 Volt, 0.3 Ohm N-Channel FEATURES DESCRIPTION • • • • • • The U nitrode power MOSFET design u tilizes th e m ost advanced technology available. This e fficie n t design achieves a very low Rosiom and a high transconductance.

UFNZ40

Contextual Info: UFNZ40 UFNZ42 POWER MOSFET TRANSISTORS 50 Volt, 0.028 Ohm N-Channel FEATURES DESCRIPTION • • • • C o m p a c t Plastic Package Fast S w itc h in g L o w D rive C urrent Ease o f Paralleling These lo w v o lta g e p o w e r M O S FETS have been designed fo r o p tim u m p e rfo rm a n c e in lo w