GS 2030 Search Results

Contextual Info: NOTES: 1. 2. 3. MEASURED AT THE BOTTOM MATERIAL : GLASS REINFORCED POLYESTER UL94-V0 THIS PRODUCT MEETS EUROPEAN UNION DIRECTIVES AND OTHER COUNTRY REGULATIONS AS DESCRIBED IN GS-47-0004 PARTS WITH AND WITHOUT SUFFIX LF TO THE PRODUCT PART NUMBER ARE IDENTICAL IN FORM , FIT AND FUNCTION

Contextual Info: NOTES: 1. 2. 3. MEASURED AT THE BOTTOM MATERIAL : GLASS REINFORCED POLYESTER UL94-V0 THIS PRODUCT MEETS EUROPEAN UNION DIRECTIVES AND OTHER COUNTRY REGULATIONS AS DESCRIBED IN GS-47-0004 PARTS WITH AND WITHOUT SUFFIX LF TO THE PRODUCT PART NUMBER ARE IDENTICAL IN FORM , FIT AND FUNCTION

Contextual Info: NOTES: 1. MEASURED AT THE BOTTOM 2. MATERIAL : PBT 30% GLASSFILLED 3. THE 'LF' PRODUCT MEETS EUROPEAN UNION DIRECTIVES AND OTHER COUNTRY REGULATIONS AS DESCRIBED IN GS-22-008 4. PARTS WITH AND WITHOUT SUFFIX LF TO THE PRODUCT PART NUMBER ARE IDENTICAL IN FORM, FIT AND FUNCTION. LF SUFFIX IS ADDED TO THE

Contextual Info: NOTES: 1. MEASURED AT THE BOTTOM 2. MATERIAL : PBT 30% GLASSFILLED 3. THE 'LF' PRODUCT MEETS EUROPEAN UNION DIRECTIVES AND OTHER COUNTRY REGULATIONS AS DESCRIBED IN GS-22-008 4. PARTS WITH AND WITHOUT SUFFIX LF TO THE PRODUCT PART NUMBER ARE IDENTICAL IN FORM, FIT AND FUNCTION. LF SUFFIX IS ADDED TO THE

Contextual Info: RAYTHEON CO-. MICROWAVE aytneon c o m p a n y peçial M icrow ave Vices Op eration & % - r 'i * : ¿¡g:. R P S 2030 S-Band P o w er FE • High breakdow n voltage • S tability under all DC bias and operating T YPE 01 HER M E TIC A LLY -S EA LED PACKAGE

Contextual Info: TLC5949 www.ti.com SBVS219A – DECEMBER 2012 – REVISED DECEMBER 2012 16-Channel, 12-Bit, ES-PWM, Full Self-Diagnosis LED Driver for 7-Bit Global BC LED Lamp Check for Samples: TLC5949 FEATURES 1 • • 2 • • • • • • • • • • • •

TLC5948

Contextual Info: TLC5948A www.ti.com SBVS192A – MARCH 2012 – REVISED DECEMBER 2012 16-Channel, 16-Bit, ES-PWM, Full Self-Diagnosis LED Driver for 7-Bit DC and 7-Bit Global BC LED Lamp Check for Samples: TLC5948A FEATURES 1 • • 23 • • • • • • • • •

TLC5948A

Abstract: SBVS192 DC05A 75004
Contextual Info: TLC5948A www.ti.com SBVS192 – MARCH 2012 16-Channel, 16-Bit, ES-PWM, Full Self-Diagnosis LED Driver for 7-Bit DC and 7-Bit Global BC LED Lamp Check for Samples: TLC5948A FEATURES 1 • • 23 • • • • • • • • • • • • • • • •

Contextual Info: TLC5949 www.ti.com SBVS219A – DECEMBER 2012 – REVISED DECEMBER 2012 16-Channel, 12-Bit, ES-PWM, Full Self-Diagnosis LED Driver for 7-Bit Global BC LED Lamp Check for Samples: TLC5949 FEATURES 1 • • 2 • • • • • • • • • • • •

GS 3585

Abstract: omap 5948 TLC5949DBQR
Contextual Info: TLC5949 www.ti.com SBVS219A – DECEMBER 2012 – REVISED DECEMBER 2012 16-Channel, 12-Bit, ES-PWM, Full Self-Diagnosis LED Driver for 7-Bit Global BC LED Lamp Check for Samples: TLC5949 FEATURES 1 • • 2 • • • • • • • • • • • •

TLC5948A

Contextual Info: TLC5948A www.ti.com SBVS192 – MARCH 2012 16-Channel, 16-Bit, ES-PWM, Full Self-Diagnosis LED Driver for 7-Bit DC and 7-Bit Global BC LED Lamp Check for Samples: TLC5948A FEATURES 1 • • 23 • • • • • • • • • • • • • • • •

Contextual Info: TLC5948A www.ti.com SBVS192A – MARCH 2012 – REVISED DECEMBER 2012 16-Channel, 16-Bit, ES-PWM, Full Self-Diagnosis LED Driver for 7-Bit DC and 7-Bit Global BC LED Lamp Check for Samples: TLC5948A FEATURES 1 • • 23 • • • • • • • • •

Contextual Info: TLC5948A www.ti.com SBVS192A – MARCH 2012 – REVISED DECEMBER 2012 16-Channel, 16-Bit, ES-PWM, Full Self-Diagnosis LED Driver for 7-Bit DC and 7-Bit Global BC LED Lamp Check for Samples: TLC5948A FEATURES 1 • • 23 • • • • • • • • •

TLC5948PWPR

Abstract: PTW 81
Contextual Info: TLC5948 SBVS173 – SEPTEMBER 2011 www.ti.com 16-Channel, 16-Bit, ES-PWM LED Driver with Full Self-Diagnosis for LED Lamp with 7-Bit DC and 7-Bit Global BC Check for Samples: TLC5948 FEATURES 1 • • 23 • • • • • • • • • • • • •

SSS6N90A

Contextual Info: SSS6N90A A d va n ce d Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology = 2.3 Q ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 3.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 900V

"MOSFET Module"

Abstract: "Battery Chargers" 200 ampere MOSFET datasheet 7272 POWER MODULES 160A QJD0232001 ds 470 53 power mosfet module
Contextual Info: QJD0232001 320 Amperes Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Power MOSFET Module 320 Amperes 250 Volts Error! Not a valid link. Description: Powerex Dual MOSFET Half Bridge Modules with Avalanche Body Diodes

"MOSFET Module"

Abstract: mosfet 400a 200 ampere MOSFET datasheet QJD0180001 "Battery Chargers" 7272 mosfet 800 v power mosfet module 400A mosfet
Contextual Info: QJD0180001 800 Amperes Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual Power MOSFET Module 800 Amperes 100 Volts Error! Not a valid link. Description: Powerex Dual MOS Half Bridge Modules with Avalanche Body Diodes feature low

Contextual Info: Advanced SSP6N90A Power MOSFET FEATURES - 900 V ^ D S o n = 2.3 Q. BVDSS • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V ■ Low RDS(ON) : 1.829 £1 (Typ.) CD

PHC20306

Contextual Info: Philips Semiconductors Objective specification Complementary enhancement mode MOS transistor D u ro n «« PHC20306 PINNING -SOT96-1 S08 FEATURES • Very low on-state resistance • High-speed switching PIN SYMBOL 1 S1 DESCRIPTION t i l ’l l source 1

Contextual Info: Advanced SSH6N90A Power MOSFET FEATURES • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = 2 . 3 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V ■ Low RDS(ON) : 1.829 £1 (Typ.) CD Rugged Gate Oxide Technology

ssh6n90

Abstract: SSH6N90A
Contextual Info: Advanced SSH6N90A Power MOSFET FEATURES - 900 V ^ D S o n = 2 . 3 Q. B V DSS • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 900V ■ Low RDS(ON) : 1.829 £1 (Typ.)

SSS6N90A

Contextual Info: Advanced SSS6N90A P o w e r MOSFET FEATURES BV D S S — • A valan che R ugged T ech n o lo g y 900 V 2.3 Q. ■ R ugged G ate O xide T e ch n o lo g y ^D S o n = ■ Lo w e r Input C a pa citance lD = 3.5 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea

Contextual Info: SSP6N90A A d va n ce d Power MOSFET FEATURES - b v dss 900 V • Avalanche Rugged Technology ^DS on = 2 .3 Q ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 900V ■ Low RDS(ON) : 1.829 i2(Typ.)

MCL T4-1

Contextual Info: RF TRANSFORMERS W 12.5 to 1250 Ω IDEBAND 10 kHz to 1400 MHz SURFACE MOUNT ADT JT/JTX TCM Ω RATIO MODEL NO. A* unl ADT1-1WT* ul ADT1-6T* ull ADT1.5-1* ADT2-1T* T-KK81 FREQUENCY MHz Note D TX INSERTION LOSS R TC 3 dB MHz 2 dB MHz 1 dB MHz Note B C O N