GS 05 24 GD 1 Search Results

GY 123

Abstract: SY 170 gd 241 c gd241c funkamateur sy 166 sy 164 VSF203 VSF200 SF 127
Contextual Info: Preisliste für Halbleiterbauelemente gültig ab 18. November 1969 Type EVP alt M ark EVP neu M ark Germanium- und Silizium-Gleichrichter GY 099 GY 100 GY 101 GY 102 GY 103 GY 104 GY 105 GY 109 GY 110 GY 111 GY 112 GY 113 GY 114 GY 115 GY 120 GY 121 GY 122

gs 05 24 gd 2

Contextual Info: Tem ic SÌ9933DY Siliconix Dual P-Channel Enhancement-Mode MOSFET Product Summary VD S V -2 0 r DS(on) (£2) I d (A) 0 .1 1 @ V G S = - 4 .5 V ± 3 .4 0.15 @ V GS = - 3 . 0 V ± 2 .9 0.19 @ V GS = - 2 .7 V ± 2 .6 S2 o SO-8 [T jG [T ~T~1 D j s2 [jT 6 1 D2

P3596

Abstract: s35d
Contextual Info: Temic Siliconix P-Channel Enhancement-Mode MOSFET SÌ9435DY Product Summary V d s V -3 0 rDS(on) (£2) 0.055 @ V GS = -1 0 V 0.07 @ VGS = - 6 V 0.105 @ VGS = -4 .5 V I d (A) ±5.1 ±4.6 ±3.6 S O -8 ~~6~~1 D rr LITTLE FOOT ZD D r t : g U T~1 D r [XI s [T

Contextual Info: T e m ic SMD15N06 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (Q ) 60 0.10 lDa (A) 15 D Q DPAK (T O -252) D •<-¿3 n°n G S Ô s Top View N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

SD215

Contextual Info: High-Speed Analog N-Channel DMOS FETs calcxrt CORPORATION \J S D 2 1 1 /S D 2 1 3 /S D 2 1 5 FEATURES DESCRIPTION High Input to Output Isolation . 120dB Low On R esistan ce. 30 Ohm

irf9321

Abstract: IRF9321PBF IRF9321TRPBF
Contextual Info: PD - 95960 IRF9321PbF HEXFET Power MOSFET VDS -30 RDS on max V 7.2 mΩ 11.2 mΩ Qg (typical) 34 nC ID -15 A (@VGS = -10V) RDS(on) max (@VGS = -4.5V) (@TA = 25°C) 6   ' 6   ' 6   ' *   ' SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application

irf5210s

Contextual Info: PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L

IRHYS63234CM

Abstract: IRHYS67234CM
Contextual Info: PD-97193 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67234CM 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67234CM 100K Rads (Si) 0.22Ω ID 12A IRHYS63234CM 300K Rads (Si) 12A 0.22Ω International Rectifier’s R6 TM technology provides

AN-994

Abstract: IRF540NL IRL540N IRL540NL IRL540NS
Contextual Info: PD -91535 IRL540NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL540NS l Low-profile through-hole (IRL540NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS = 100V RDS(on) = 0.044Ω G

AN-994

Abstract: IRL2703 IRL2703S
Contextual Info: PD - 9.1360 IRL2703S PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 0.04Ω G ID = 24A S Description

sd5101n

Abstract: sd5200 SD5100N SDS101 Universal Semiconductor SD5200N
Contextual Info: SD5100, SD5101, SD5200 Universal Semiconductor N-C hannel E nhancem ent M ode Quad D-Mos F E T A nalog S w itch D riv e r A rra y s O rdering Inform ation Description 14-Pin Plastic DIP 16-Pln Plastic DIP Gold-Backed Chips in Waffle Pack Common Source 30V , s o n

AN-994

Abstract: IRL2703 IRL2703S
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1360 IRL2703S PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V

AN-994

Abstract: IRL2703 IRL2703S
Contextual Info: PD - 9.1360 IRL2703S PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 0.04Ω G ID = 24A S Description

IRF6611

Abstract: IRF6611TR1
Contextual Info: PD - 96978E IRF6611 DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified l l l l l l l l l RoHS compliant containing no lead or bromide  VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 30V max ±20V max 2.0mΩ@ 10V 2.6mΩ@ 4.5V Dual Sided Cooling Compatible 

Contextual Info: PD - 96978 IRF6611 DirectFET Power MOSFET Typical values unless otherwise specified Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching above 1MHz Ideal for CPU Core DC-DC Converters

2N760

Abstract: 2n7608 4.5V to 100v input regulator
Contextual Info: PD-97062B 2N7608T2 IRHLF77110 100V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE TO-39 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHLF77110 100K Rads (Si) 0.32Ω IRHLF73110 300K Rads (Si) 0.32Ω ID 6.0A 6.0A T0-39

IRL540N

Contextual Info: PD - 91495A IRL540N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.044Ω G ID = 36A S Description Fifth Generation HEXFETs from International Rectifier

to 206af

Abstract: to-206af sd210 206af SD214 rings To206AF
Contextual Info: 3bE D TELEDYNE COMPONENTS ÔIlTbQS 00077^0 S BITSC 'T-lÇ-lÇ WTELEDYNE COMPONENTS SD210 SD211 SD212 SD213 SD214 SD215 N-CHANNEL ENHANCEMENT-MODE DMOS FET SWITCHES FEATURES ABSOLUTE MAXIMUM RATINGS • ■ ■ V ds High Input to Output Isolation—120dB typical

1530A

Abstract: f1010e IRF 10A 55V irf 9246 I840G IRF9Z34N IRFI9Z34N IRF MOSFET 10A P irf power mosfet Equivalent IRF 44
Contextual Info: PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.10Ω G ID = -14A

1530A

Abstract: IRF9Z34N IRF high current p-channel irf 9246 IRFI9Z34N I840G MOSFET IRF 630 F1010E
Contextual Info: PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.10Ω G ID = -14A

Contextual Info: PD - 96977 IRF6636 DirectFET Power MOSFET Typical values unless otherwise specified Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible 20V max ±20V max 3.2mΩ@ 10V 4.6mΩ@ 4.5V Ultra Low Package Inductance Qg tot Qgd Qgs2

IRF5210

Abstract: IRF5210S 1405B
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1405B IRF5210S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated

Contextual Info: PD - 96977C IRF6636 DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified l l l l l l l l l RoHS compliant containing no lead or bromide  VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 20V max ±20V max 3.2mΩ@ 10V 4.6mΩ@ 4.5V Dual Sided Cooling Compatible 

IRF6635

Abstract: IRF6635TR1
Contextual Info: PD - 96981F IRF6635 DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified l l l l l l l l l RoHs compliant containing no lead or bromide  VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 30V max ±20V max 1.3mΩ@ 10V 1.8mΩ@ 4.5V Dual Sided Cooling Compatible 