diode 400V 1A SOD-123
Abstract: 10uF CAPACITOR 1210 PACKAGE GRM39Y5V104Z25V RO4003 600F0R GRM42-6Y5V106Z25V cap 0805 RF capacitor
Contextual Info: TC3741 REV0_20070111 9.5 – 10.5 GHz 2W Single Bias MMIC FEATURES PHOTO ENLARGEMENT ! P-1 dB: 33 dBm ! Small Signal Gain: 11 dB ! Power Added Efficiency: 25 % ! IP3: 42 dBm ! Input/Output 50 Ω Match ! Bias condition: 1100 mA @ 10 V DESCRIPTION The TC3741 is a 2-stage PHEMT Single Bias MMIC power amplifier. It is designed for use in low cost and high
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TC3741
TC3741
1000PF
600F0R7BT
600F1R0BT
GRM39X7R102K50V
GRM39Y5V104Z25V
GRM42-6Y5V106Z25V
GRM31CF5E106ZA01L
OD-123)
diode 400V 1A SOD-123
10uF CAPACITOR 1210 PACKAGE
GRM39Y5V104Z25V
RO4003
600F0R
cap 0805
RF capacitor
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GRM39Y5V104Z25V
Abstract: RO4003
Contextual Info: TC3332 REV2_20070613 3.3 - 4.0 GHz 1W Single Bias MMIC FEATURES PHOTO ENLARGEMENT ! P-1 dB: 30 dBm ! Small Signal Gain: 27 dB ! Power Added Efficiency: 25 % ! IP3: 39 dBm ! Input/Output 50 Ω Match ! Bias condition: 500 mA @ 9 V DESCRIPTION The TC3332 is a 2-stage PHEMT Single Bias MMIC power amplifier. It is designed for use in low cost and
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TC3332
TC3332
1000PF
GRM39X7R102K50V
GRM39Y5V104Z25V
GRM42-6Y5V106Z25V
GRM31CF5E106ZA01L
GRM39Y5V104Z25V
RO4003
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CAP 0805 ATC 600F
Abstract: chip resistor 1206 CW-37 American Technical Ceramics GaAs FET chip GRM39Y5V104Z25V murata cw
Contextual Info: TC2997D REV3_20050418 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs PHOTO ENLARGEMENT FEATURES • 20W Typical Power at 2.45 GHz • 10dB Typical Linear Power Gain at 2.45 GHz • High Linearity: IP3 = 52 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 %
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TC2997D
TC2997D
GRM39COG0R75C50V
GRM39COG2RC50V
GRM39COG1R2C50V
GRM39X7R102K50V
GRM39Y5V104Z25V
GRM42-6Y5V106Z25V
GRM31CF5E106ZA01L)
250WVDC)
CAP 0805 ATC 600F
chip resistor 1206
CW-37
American Technical Ceramics
GaAs FET chip
GRM39Y5V104Z25V
murata cw
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TC2996D
Abstract: GaAs FET chip GRM39Y5V104Z25V
Contextual Info: TC2996D REV2_20070503 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 12 W Typical Power at 2.45 GHz • 11 dB Typical Linear Power Gain at 2.45 GHz PHOTO ENLARGEMENT • High Linearity: IP3 = 50 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 %
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TC2996D
TC2996D
GRM39COG0R7C50V
GRM39COG1R5C50V
1000PF
GRM39X7R102K50V
GRM39Y5V104Z25V
GRM42-6Y5V106Z25V
GRM31CF5E106ZA01L)
GRM39COG2R5C50V
GaAs FET chip
GRM39Y5V104Z25V
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ATC 600F
Abstract: RO4003 GRM39Y5V104Z25V TC3943 10GHZ GAAS
Contextual Info: TC3943 REV2_20070503 0.5W Single-Bias and Prematched GaAs Power PHEMTs using SMT package FEATURES PHOTO ENLARGEMENT • Prematched for 5~10 GHz • 0.5W Typical Output Power at 5~10GHz • 7dB Typical Linear Power Gain at 10GHz • High Linearity: IP3 = 37 dBm Typical at 5~10GHz
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TC3943
10GHz
TC3943
27dBm
10GHz.
TC3943_
ATC 600F
RO4003
GRM39Y5V104Z25V
10GHZ GAAS
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D1 diode
Abstract: diode 400V 1A SOD-123 GRM39Y5V104Z25V RO4003 TC3541 cap 1210 Murata WiFi
Contextual Info: TC3541 REV0_20060921 5.2 – 5.9 GHz 2W Single Bias MMIC FEATURES PHOTO ENLARGEMENT ! P-1 dB: 33 dBm ! Small Signal Gain: 20 dB ! Power Added Efficiency: 25 % ! IP3: 42 dBm ! Input/Output 50 Ω Match ! Bias condition: 1000 mA @ 9 V DESCRIPTION The TC3541 is a 2-stage PHEMT Single Bias MMIC power amplifier. It is designed for use in low cost and high
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Original
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TC3541
TC3541
APPLICATITC3541
1000PF
OD-123)
GRM39X7R102K50V
GRM39Y5V104Z25V
GRM42-6Y5V106Z25V
GRM31CF5E106ZA01L
D1 diode
diode 400V 1A SOD-123
GRM39Y5V104Z25V
RO4003
cap 1210
Murata WiFi
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