GPX09300 Search Results

BSL215C

Abstract: HLG09283 L6327
Contextual Info: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)

TLE4966K

Abstract: TSOP6 AEA03645 HLG09283
Contextual Info: Data Sheet, Rev. 1.0, September 2007 TLE4966K High Precision Hall-Effect Switch with Direction Detection Sensors Edition 2007-09 Published by Infineon Technologies AG 81726 München, Germany 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

SMD MARKING d36

Abstract: BSL802SN HLG09283 JESD22-A114 L6327
Contextual Info: BSL802SN OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 22 mΩ V GS=1.8 V 31 ID 7.5 A • Avalanche rated • Qualified according to AEC Q101

BSL207N

Abstract: HLG09283 JESD22-A114 L6327
Contextual Info: BSL207N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 70 mΩ V GS=2.5 V 110 ID 2.1 A • Avalanche rated • Qualified according to AEC Q101

BCR450

Abstract: BC817SU BCX68 BCX68-25 LM6181 SC74
Contextual Info: D a t a s h e e t , R ev . 2 . 1 , S e p t e m b e r 2 00 7 LED controller IC BCR450 S m a l l S i g n a l D i s c r et e s Edition 2007-09-26 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2007. All Rights Reserved.

BSL214N

Contextual Info: BSL214N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 140 mΩ V GS=2.5 V 250 ID 1.5 A • Avalanche rated • Qualified according to AEC Q101

Contextual Info: BSL806N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 57 mΩ V GS=1.8 V 82 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101

JESD22-C10-HBM

Abstract: A70 SMD
Contextual Info: BSL302SN OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 25 mΩ V GS=4.5 V 38 ID 7.1 A • Avalanche rated • dv /dt rated PG-TSOP-6 • Pb-free lead plating; RoHS compliant

Contextual Info: BSL306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated PG-TSOP6 • Qualified according to AEC Q101

BSL207N

Abstract: D-21A
Contextual Info: BSL207N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 70 mΩ V GS=2.5 V 110 ID 2.1 A • Avalanche rated • Qualified according to AEC Q101

bsl307sp

Contextual Info: BSL307SP Rev 1.5 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode RDS on 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A PG-TSOP-6-1 • Avalanche rated • dv/dt rated 4 3 2 1 5

marking 8d

Abstract: marking 8E 8d4f marking IBW 8D marking MARKING 3B
Contextual Info: 3B=*'/@6 # <?5" # & E $  & 9 -8 8& 53: -8'=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ 9I S  G4? * 6;4AA8? ' 9I"^]#$\Pf S  A;4A68@ 8AF@ B78 S & B: <6 ?8H8?   / D4F87 %+ K ) =I / 0( \" ) =I   / )+( $9 %*&( 6 S  -  CDBF86F87 F=%JIEF%. S + G4?<9<87 466BD7<A: FB    +

BSL215C

Abstract: HLG09283 L6327
Contextual Info: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)

Contextual Info: BSL307SP Rev 1.6 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode RDS on 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A PG-TSOP-6-1 • Avalanche rated • dv/dt rated 4 3 2 1 5

Contextual Info: TLE4966-2K High Precision Hall Switch with two Outputs Datasheet Rev.1.0, 2010-06-28 Sense & Control Edition 2010-06-28 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

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BCR450

Abstract: AN105 infineon 50S INFINEON AECQ100 AN105 BC817SU BCX68 BCX68-25 SC74 asc74
Contextual Info: BCR450 LED Driver IC BCR450 Power LED Driver IC 1 BCR450 Power LED Driver IC Features • Low voltage drop across sense resistor, 0.15 V typical • High output current precision • Operating voltage fro 8 to 27 V • Over voltage protection • Overtemperature current foldback and Thermal shut down

55b7

Abstract: C89T marking BM marking A9
Contextual Info: 3B=* ,@ # <?5" # & E $ & 9 -88& 53: -8 '=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ ;J T  H5@ + 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A 9BGA C89 %+( L ) >J 0 )-( ]" ) >J   0 */( $; T ' C;=7 @9I9@   0 E5G98 %)&- 7 T  I5@5B7<9 E5G98 G>%KJFG%. T , H5@=:=98 577CE8=B; GC 

CH 8i

Contextual Info: 3C=/'-? @Y\R>@Cb ' : .99' 64;.9 >.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ;J U  I6A) 8=6CC: A ' ;J"`_#$^Rh U C=6C8: B : CHB D9: U 0 AHF6 ' D<> 8 A: J: A  1 F6H: 9 *( M ) >J   1 -/ ^" ) >J  1 0* $; *&+ 7 U  J6A6C8=: F6H: 9 U , I6A> ;> : 9 688DF9>

AN105 infineon

Contextual Info: Datasheet, Rev. 3.1, Feb. 2013 LED Driver IC BCR450 Power Management and Multimarket Edition 2013-02-21 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2013. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of

BSL315P

Abstract: JESD22-A114 L6327
Contextual Info: BSL315P OptiMOS -P 2 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode -30 V V GS=10 V 150 mΩ V GS=4.5 V 270 ID • Logic level (4.5V rated) -1.5 • Avalanche rated A PG-TSOP-6 • Qualified according to AEC Q101

BSL314PE

Abstract: JESD22-A114 L6327
Contextual Info: BSL314PE OptiMOS -P 3 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 140 mΩ V GS=-4.5 V 230 ID -1.5 A • ESD protected PG-TSOP-6 • Qualified according AEC Q101

BSL308C

Abstract: HLG09283 L6327
Contextual Info: BSL308C OptiMOS P3 + Optimos™ 2 Small Signal Transistor Product Summary Features P N -30 30 V V GS=±10 V 80 57 mΩ V GS=±4.5 V 130 93 -2.0 2.3 • Complementary P + N channel · Enhancement mode V DS · Logic level 4.5V rated R DS(on),max · Avalanche rated

AEA03645

Abstract: PG-SSO-41 4966B AEA03255 AEP03646 HLG09283 TLE4966H TLE4966L
Contextual Info: Da ta Sh e et , V 1 .1 , Oct o be r 20 0 5 TLE4966H TLE4966L High Precision Hall-Effect Switch with Direction Detection Sen s ors Edition 2005-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG 2005.