726-BGA622H6820
Abstract: marking BXs SOT343 lna Germanium power
Contextual Info: D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8 B G A 6 22 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-04-14 Published by Infineon Technologies AG,
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BGA614
Abstract: GPS05605 T056
Contextual Info: Data sheet, BGA614, Nov. 2003 BGA 614 Silicon Germanium B r o a d b a n d M M I C A m p li f i e r MMIC S ec ur e M obile S o l u ti o n s Silico n Discre te s N e v e r s t o p t h i n k i n g . Edition 2003-11-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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BFP420 application notes
Abstract: BFP420 BGB420 bgb420 application note GPS05605 GMA marking RF NPN power transistor 2.5GHz
Contextual Info: BGB420, Nov. 2000 BGB 420 Active Biased Transistor MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2000-11-28 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2000.
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bgb420d-81541bfp420gps05605+4bfp420 application notesbgb420 application notegma markingrf npn power transistor 2.5ghz
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CHIP T502 S
Abstract: JS 08321 BR 8050 CHIP T502 P BFP420 BGB420 GPS05605 T502 RF Transistor s-parameter s-parameter RF POWER TRANSISTOR NPN
Contextual Info: BGB420, Aug. 2001 BGB 420 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2001
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bgb420d-81541bfp420gps05605+7chip t502 sjs 08321br 8050chip t502 pt502rf transistor s-parameters-parameter rf power transistor npn
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INFINEON marking amplifier
Abstract: Germanium Power Diodes Infineon Technologies transistor 4 ghz BGA612 GPS05605 JESD22-A114 Germanium power
Contextual Info: D a t a S h e e t , R e v . 2 . 1 , A p r i l 2 00 8 B G A 6 12 S i l i c on G e r m a n i u m B r o a d b a n d M M IC A m pl i f i e r S m a l l S i g n a l D i s c r et e s Edition 2008-04-24 Published by Infineon Technologies AG, 81726 München, Germany
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Contextual Info: Data Sheet, Rev. 2.1, Sept. 2011 BGA616 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!
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transistor SMD MARKING CODE 772
Abstract: smd Transistor 1117 marking code 933 SMD Transistor SMD CODE MARKING 1046 SMD MARKING CODE WG sot-343 transistor smd code 404
Contextual Info: P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz F = 0.55 dB; GA = 15.7 dB @ 3 V; 10 mA; f = 1.8 GHz • Suitable for PCS CDMA and UMTS applications • Low cost miniature package P-SOT343-4-1
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p-sot343-4-1q62702-g0116rn/50gps05605+6transistor smd marking code 772smd transistor 1117marking code 933 smd transistorsmd code marking 1046smd marking code wg sot-343transistor smd code 404
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T0-56
Contextual Info: P r e l i m in a r y d a t a s h e e t , B G A 6 1 4 , N o v . 2 0 0 1 BGA 614 Silicon Germanium B r o a d b a n d M M I C A m p li f i e r MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-11-14 Published by Infineon Technologies AG,
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GPS05605
Abstract: BGA622 Germanium power
Contextual Info: D a t a S he et , R e v . 2 . 1 , J u l y 2 00 7 B G A 6 22 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2007-07-06 Published by Infineon Technologies AG, 81726 München, Germany
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T056
Abstract: bga616 GPS05605 Germanium power
Contextual Info: P r e l i m i n a ry d a t a s h e e t , B G A 6 1 6 , J u ly 2 0 0 1 BGA 616 Silicon Germanium B r o a d b a n d M M I C A m p li f i e r MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-07-13 Published by Infineon Technologies AG,
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transistor s11 s12 s21 s22
Abstract: SMD MARKING CODE WG sot-343 smd marking 1331 sot 6943-3 SMD TRANSISTOR 701 325 diode din 4147 GPS05605 marking code s22 smd marking s22 cfh marking
Contextual Info: P-HEMT CFH 800 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz • Suitable for PCS CDMA and UMTS applications F = 0.52 dB; GA = 15.2 dB @ 3 V; 20 mA; f = 1.8 GHz • Low cost miniature package P-SOT343-4-1
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p-sot343-4-1rn/50gps05605transistor s11 s12 s21 s22+8smd marking code wg sot-343smd marking 1331 sot6943-3smd transistor 701 325diode din 4147marking code s22smd marking s22cfh marking
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BGA612
Abstract: GPS05605
Contextual Info: P r e l i m i n a ry d a t a s h e e t , B G A 6 1 2 , J u ly 2 0 0 1 BGA 612 Silicon Germanium B r o a d b a n d M M I C A m p li f i e r MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-07-16 Published by Infineon Technologies AG,
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INFINEON package PART MARKING
Abstract: Germanium power
Contextual Info: Data Sheet, Dec. 2002 BGA 622 Silicon Germanium W id e Ba n d L o w N o i s e A m p l i f ie r W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2002-12-18 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany
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ujt 2646
Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
Contextual Info: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!
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d-8154114-077sq62702-d1353q62702-g172+11q62702-g173ujt 2646transistor j 5804label infineon barcodemsc 1697msc 1697 ic pin diagramrohde und schwarz active antenna he 011cd 6283 audiosmd transistor v75log tx2 0909ic data book free download
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Contextual Info: D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8 B G A 6 22 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-04-14 Published by Infineon Technologies AG,
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A01 MMIC
Contextual Info: Data Sheet, Rev. 2.1, Sept. 2011 BGA614 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!
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BGA614
Abstract: GPS05605
Contextual Info: P r e l i m in a r y d a t a s h e e t , B G A 6 1 4 , Ma y 2 0 0 2 BGA 614 Silicon Germanium B r o a d b a n d M M I C A m p li f i e r MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2002-05-27 Published by Infineon Technologies AG,
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GPS05605
Abstract: MMIC marking code R Germanium power
Contextual Info: P r e l i m in a r y d a t a s h e e t , B G A 6 2 2 , S e p t . 2 0 0 1 BGA 622 Silicon Germanium W id e Ba n d L o w N o i s e A m p l i f ie r MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-09-25 Published by Infineon Technologies AG,
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Germanium power
Contextual Info: P r e l i m i n a ry d a t a s h e e t , B G A 6 1 4 , J u ly 2 0 0 1 BGA 614 Silicon Germanium B r o a d b a n d M M I C A m p li f i e r MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-07-16 Published by Infineon Technologies AG,
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INFINEON package PART MARKING
Abstract: BGA622
Contextual Info: Preliminary data sheet, BGA622, Aug. 2002 BGA622 Silicon Germanium Wide Band Low Noise Amplifier MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-08-08 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München
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RF POWER TRANSISTOR NPN 3GHz
Abstract: NPN marking MCs 1741 transistor equivalent table BGB540-Chip BFP540 spice
Contextual Info: P r e l i m in a r y d a t a s h e e t , B G B 5 4 0 , A u g . 2 0 0 1 BGB 540 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-16 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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IN5048
Abstract: Germanium Power Devices BGA614 Germanium Amplifier
Contextual Info: Data Sheet, Rev. 2.1, Sept. 2011 BGA614 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!
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BFP540
Abstract: Transistor BFP540 BGB540 GPS05605 T0559
Contextual Info: P r e l i m in a r y d a t a s h e e t , B G B 5 4 0 , D e c . 2 0 0 0 y BGB 540 li m in ar Active Biased Transistor P re MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2000-12-04 Published by Infineon Technologies AG,
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T056
Abstract: BGA614 GPS05605 Germanium power
Contextual Info: P r e l i m in a r y d a t a s h e e t , B G A 6 1 4 , A u g . 2 0 0 1 BGA 614 Silicon Germanium B r o a d b a n d M M I C A m p li f i e r MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-02 Published by Infineon Technologies AG,
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