GPS05559 Search Results

Contextual Info: D a t a S h e e t , R e v . 2 . 1 , A p r i l 2 00 8 B G A 4 16 RF Cascode Amplifier S m a l l S i g n a l D i s c r et e s Edition 2008-04-21 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2008. All Rights Reserved.

Contextual Info: GaAs FET CFY 30 Data Sheet • Low noise Fmin = 1.4 dB @ 4 GHz • High gain (11.5 dB typ. @ 4 GHz) • For oscillators up to 12 GHz • For amplifiers up to 6 GHz • Ion implanted planar structure • Chip all gold metallization • Chip nitride passivation

ZERO Bias diode

Abstract: 04W06 bat17
Contextual Info: SIEMENS BAT 63-099R Silicon Schottky Diodes * Zero bias diode array for mixer and detectors up to GHz frequencies • Crossover ring quad Type Marking BAT 63-099F3SN Ordering Code Pin Configuration Package Q62702-A1105 1= A SO T-143 2=C Maximum Ratings Parameter

smd TRANSISTOR code marking 013

Abstract: TRANSISTOR SMD MARKING CODE 207 marking code C3 SMD Transistor NF marking TRANSISTOR SMD c4 MMIC SOT 143 marking CODE 77 GPS05559 Q68000-A8370 P-SOT143-4-1 smd marking code vd P-SOT-143-4-1
Contextual Info: GaAs MMIC CGY 50 Data Sheet • Single-stage monolithic microwave IC MMIC-amplifier • Cascadable 50 Ω gain block • Application range: 100 MHz to 3 GHz • IP3 30 dBm typ. @ 1.8 GHz • Gain 8.5 dB typ. @ 1.8 GHz • Low noise figure: 3.0 dB typ @ 1.8 GHz

ujt 2646

Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
Contextual Info: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!

MARKING A2

Abstract: smd transistor cfy GPS05559 Q62703-F97 MARKING code GM SOT 323 CFY30 P-SOT143-4-1 cfy transistor
Contextual Info: GaAs FET CFY 30 Data Sheet • • • • • • • Low noise Fmin = 1.4 dB @ 4 GHz High gain (11.5 dB typ. @ 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion implanted planar structure Chip all gold metallization Chip nitride passivation

MARKING SOT-143 C5

Abstract: Q68000-A8370 marking code C5 SMD ic inductor 1 mH MMIC SOT 143 marking CODE 77 transistor smd marking code c3
Contextual Info: GaAs MMIC CGY 50 Data Sheet • Single-stage monolithic microwave IC MMIC-amplifier • Cascadable 50 Ω gain block • Application range: 100 MHz to 3 GHz • IP3 30 dBm typ. @ 1.8 GHz • Gain 8.5 dB typ. @ 1.8 GHz • Low noise figure: 3.0 dB typ @ 1.8 GHz

transistor smd cf

Abstract: CF 309 smd transistor marking cf g1 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 352 EHT07318
Contextual Info: GaAs FET CF 739 Data Sheet • • N-channel dual-gate GaAs MESFET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,

transistor smd CF rs

Abstract: transistor smd marking mx smd marking CF marking K gaas fet gaas fet marking B FET GAAS marking a MARKING CF smd marking cf rl MMIC marking CODE cf RF smd code SOT143 Package
Contextual Info: GaAs MMIC CF 750 Data Sheet • • • • • • Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz For mixer and amplifier applications, i.e LNA- and buffer stages in handheld equipment Low power consumption, 2 mA operating current typ. Operating voltage range: 3 to 6 V

smd transistor marking cf

Abstract: transistor smd CF F 739 DC cf739 Q62702-F1215 F1215 CF 309 CF MARKING CODE gaas fet marking a MARKING CF
Contextual Info: GaAs FET CF 739 Data Sheet • • N-channel dual-gate GaAs MESFET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,

Contextual Info: D a t a s h e e t , B G A 4 1 6 , J u ly 2 0 0 5 BGA 416 R F C a s c o d e A m p l i f ie r MMIC Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2005-07-26 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München

marking C1s

Abstract: BGA416 GPS05559 C1s TOP MARKING INFINEON marking C1S
Contextual Info: D a t a S h e e t , R e v . 2 . 1 , A p r i l 2 00 8 B G A 4 16 RF Cascode Amplifier S m a l l S i g n a l D i s c r et e s Edition 2008-04-21 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2008. All Rights Reserved.

GaAs FET cfy 14

Abstract: marking code s22 GPS05559 Q62703-F97 MARKING code GM SOT 323 SMD Transistor Marking Code 71 SOT 23 smd transistor cfy P-SOT-143-4-1 GaAs FET cfy 19
Contextual Info: GaAs FET CFY 30 Data Sheet • Low noise Fmin = 1.4 dB @ 4 GHz • High gain (11.5 dB typ. @ 4 GHz) • For oscillators up to 12 GHz • For amplifiers up to 6 GHz • Ion implanted planar structure • Chip all gold metallization • Chip nitride passivation

transistor smd CF rs

Abstract: transistor smd marking mx transistor smd cf CF 750
Contextual Info: GaAs MMIC CF 750 Data Sheet • • • • • • Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz For mixer and amplifier applications, i.e LNA- and buffer stages in handheld equipment Low power consumption, 2 mA operating current typ. Operating voltage range: 3 to 6 V

transistor smd CF rs

Abstract: transistor smd marking mx smd marking cf rl smd transistor marking MX smd marking CF GPS05559 P-SOT-143-4-1 marking code cf Q62702-F1391 m 147 smd transistor
Contextual Info: GaAs MMIC CF 750 Data Sheet • • • • • • Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz For mixer and amplifier applications, i.e LNA- and buffer stages in handheld equipment Low power consumption, 2 mA operating current typ. Operating voltage range: 3 to 6 V