GLASS DIODEN SMD Search Results

ma21a

Contextual Info: BAV19 . BAV21 BAV19 . BAV21 Superfast Switching Si-Planar Diodes Superschnelle Si-Planar-Dioden Version 2012-05-16 Max. power dissipation Max. Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 1.9 50.200 V Glass case

equivalent bav20

Abstract: BAV100 BAV102 BAV18 BAV19 BAV20 BAV21
Contextual Info: BAV18 . BAV21 BAV18 . BAV21 Superfast Switching Si-Planar Diodes Superschnelle Si-Planar-Dioden Version 2011-10-17 Max. power dissipation Max. Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 1.9 50.200 V Glass case

J BAV21

Abstract: BAV100 BAV102 BAV18 BAV19 BAV20 BAV21
Contextual Info: BAV18 . BAV21 BAV18 . BAV21 Superfast Switching Si-Planar Diodes Superschnelle Si-Planar-Dioden Version 2005-08-15 Max. power dissipation Max. Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 1.9 50.200 V Glass case

equivalent bav20

Abstract: BAV19 equivalent
Contextual Info: BAV19 . BAV21 BAV19 . BAV21 Superfast Switching Si-Planar Diodes Superschnelle Si-Planar-Dioden Version 2012-07-03 Max. power dissipation Max. Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung 100.200 V Glass case Glasgehäuse

Contextual Info: BAV18 . BAV21 BAV18 . BAV21 Ultrafast Switching Si-Planar Diodes Ultraschnelle Si-Planar-Dioden Version 2005-08-15 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 1.9 50.200 V Glass case Glasgehäuse 3.9

SMD Dioden

Abstract: LL101A LL101C SD101A SD101B SD101C SMD Schottky Dioden
Contextual Info: SD101A . SD101C SD101A . SD101C Schottky Barrier Diodes Schottky-Barrier Dioden Version 2006-04-27 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 40.60 V Glass case Glasgehäuse 3.9 62.5 Ø 1.9 15 mA DO-35

SD103A

Contextual Info: SD103A . SD103C SD103A . SD103C Schottky Barrier Diodes Schottky-Barrier Dioden Version 2012-07-03 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 20.40 V ±0.4 Glass case Glasgehäuse 3.9 ±3 Ø 1.9±0.1 62.5

glass dioden smd

Contextual Info: SD101B . SD101C SD101B . SD101C Schottky Barrier Diodes Schottky-Barrier Dioden Version 2012-07-03 Nominal current Nennstrom 15 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 3.9 62.5 Glass case Glasgehäuse ~ DO-35 ~ SOD-27 Weight approx.

Contextual Info: SD103A . SD103C SD103A . SD103C Schottky Barrier Diodes Schottky-Barrier Dioden Version 2012-05-10 Nominal current Nennstrom 3.9 62.5 Ø 1.9 0.2 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20.40 V Glass case Glasgehäuse DO-35

SOD-27

Abstract: LL101A LL101C SD101A SD101B SD101C
Contextual Info: SD101A . SD101C SD101A . SD101C Si-Schottky-Barrier Diodes Si-Schottky-Barrier Dioden Version 2006-04-27 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 40.60 V Glass case Glasgehäuse 3.9 62.5 Ø 1.9 15 mA

SOD-27

Abstract: LL103A LL103C SD103A SD103B SD103C
Contextual Info: SD103A . SD103C SD103A . SD103C Si-Schottky-Barrier Diodes Si-Schottky-Barrier Dioden Version 2008-04-17 Nominal current Nennstrom 3.9 62.5 Ø 1.9 0.2 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20.40 V Glass case Glasgehäuse

LL101B

Abstract: LL101C SD101B SD101C SMD Schottky Dioden
Contextual Info: SD101B . SD101C SD101B . SD101C Schottky Barrier Diodes Schottky-Barrier Dioden Version 2010-12-06 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 40.50 V Glass case Glasgehäuse 3.9 62.5 Ø 1.9 15 mA DO-35

Contextual Info: SD101B . SD101C SD101B . SD101C Schottky Barrier Diodes Schottky-Barrier Dioden Version 2010-12-06 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 1.9 40.50 V Glass case Glasgehäuse 3.9 62.5 15 mA DO-35

SOD-27

Abstract: LL103A LL103C SD103A SD103B SD103C
Contextual Info: SD103A . SD103C SD103A . SD103C Schottky Barrier Diodes Schottky-Barrier Dioden Version 2008-04-17 Nominal current Nennstrom 3.9 62.5 Ø 1.9 0.2 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20.40 V Glass case Glasgehäuse DO-35

Diode 4148 MINIMELF

Contextual Info: LL 4148, LL 4150, LL 4151, LL 4448, Si-Allzweck-Dioden für die Oberflächenmontage Surface Mount Small Signal Si-Diodes 150 niA Nominal current Nennstrom 50. 100 V Repetitive peak reverse voltage Periodische Spitzensperrspannung SOD-80 Glass case MiniMELF

ZPD4.3

Abstract: ZPD12 equivalent
Contextual Info: ZPD2.7 . ZPD75 500 mW ZPD2.7 . ZPD75 (500 mW) Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden Version 2012-05-10 Maximum power dissipation Maximale Verlustleistung 3.9 62.5 Ø 1.9 500 mW Nominal Z-voltage Nominale Z-Spannung 2.7.75 V Glass case

Zener

Abstract: ZPD18 ZPD5.6 equivalent ZPD8.2 ZMM75 ZPD10 ZPD11 ZPD12 ZPD13 ZPD15
Contextual Info: ZPD2.7 . ZPD75 500 mW ZPD2.7 . ZPD75 (500 mW) Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden Version 2010-12-02 Maximum power dissipation Maximale Verlustleistung 3.9 62.5 Ø 1.9 500 mW Nominal Z-voltage Nominale Z-Spannung 2.7.75 V Glass case

smd ag zener

Abstract: ma 156 zener diode zpd 6 ZPD 6,6 ZPD5,1 ZMM75 ZPD10 ZPD11 ZPD12 ZPD13
Contextual Info: ZPD1 . ZPD75 500 mW ZPD1 . ZPD75 (500 mW) Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden Version 2008-09-05 3.9 62.5 Ø 1.9 Maximum power dissipation Maximale Verlustleistung 500 mW Nominal Z-voltage Nominale Z-Spannung 1.75 V Glass case

smd glass dioden

Contextual Info: ZMM 1.ZMM 51 500 mW Silizium-Z-Dioden für die Oberflächenmontage Surface mount Silicon-Z-Diodes Nominal breakdown voltage Nenn-Arbeitsspannung 0.75.51 V Tolerance o f zener voltage Toleranz der Arbeitsspannung ±5% Glass case MiniMELF Glasgehäuse MiniMELF

Zener ZPD

Abstract: zpd diode zener diode zpd 6 diode u2 a05 zpd 6.2 zener zpd1-zpd51 MW1 SMD diode MINImelf zener diode smd ZPD47 Zener ZPD 3.3
Contextual Info: ZPD 1.ZPD 51 500 mW Silizium-Z-Dioden Silicon-Z-Diodes 0.75.51 V Nominal breakdown voltage Nenn-Arbeitsspannung ±5% Tolerance of zener voltage Toleranz der Arbeitsspannung ECU mox. h j - . , . n ax . ÇvO - K 0.56 DO-35 Glass case Glasgehäuse 0.13 g

Contextual Info: IN 4148, IN 4150, IN 4151, IN 4448, Small Signal Si-Diodes Si-Allzwech-Dioden Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung .ÇsO Ct V J 5 0 . ,100 V H Hrgl9 j £ 150 mA nox, Cvo EM Glass case Glasgehäuse DO-35

Diode BAV 19

Contextual Info: BAV 18.BA V 21 Si-Allzweck-Dioden Small Signal Si-Diodes 200 mA Nominal current Nennstrom 50.200 V Repetitive peak reverse voltage Periodische Spitzensperrspannung ecu ar ffÛX. 01.9 5£ 'f; nax. Svo - h“ 0.56 £ftJ Dimensions / Maße in mm DO-35 Glass case

marking SH SOT23

Abstract: smd marking 619 BB505B smd marking bb marking 12 SOD123 SOD-123 BB801 BB409 BA 811 SIEMENS marking
Contextual Info: SIEMENS AKTIEN 6E SEL LSCHAF 47E D 0235bDS OOebBST T « S I E G NF-Dioden / AF Diodes PIN Diodes Glass Package Type Max. ratine3s 1/r h mA V Marking Fig. nX 50 150 < 50 0.55 1 < 40 100 < 1 DO-35 DHD - 2 20 o 0.92 0.28 1 1 < 0.7 22 100 100 < 1 < 1.1 SOD-123

Contextual Info: DAF 811 A /K . DAF 814 A/K Fast Switching Diode Arrays Schnelle Dioden Sätze Nominal power dissipation Verlustleistung 1-1 1.2 W Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Glasgehäuse 100.400 V 24 x 3 x 5.1 [mm] Weight approx.