GK TRANSISTOR 72 Search Results

GK transistor 42

Abstract: transistor FET cd 332 m
Contextual Info: Mechanical Outlines MT-42 TO -18 02.0 1 2 3 Transistor O FET TO-39 ! CD Lead Code r *>4.74 S D G TO-72 04.74 08.26 ses 1 K Lead Code Unit : m m inch , T o lerance : +/- 0 .3 m m (0.012inch), N o scale 3-31 2 3 GK GA 4 A J B E C CASE G E B C CASE DH S D G

br101

Contextual Info: N AMER PHILIPS/DISCRETE b^E » b b S B 'O l ;_ QDE7621 234 APX BR101 l SILIC O N C O N T R O L L E D SW IT C H The BR101 is a planar p-n-p-n switch in a TO -72 metal envelope, intended for time base circuits and other television applications. It is also suitable as trigger device for thyristors. It is an integrated p-n-p/

4302NG

Abstract: Magnus BMR ericsson
Contextual Info: Limited Internal Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also subject responsible if other EAB/FC/P Maria Rosendahl Approved PKB 4302NG EAB/FC/P Maria PI Rosendahl 1 (1) (4) No. Checked MICHORG 001 1/1301 52-EN/LZT - BMR 659

s41 hall sensor

Abstract: Russian diode Transistor ML614S IC6001 FP99
Contextual Info: ORDER NO. DSC0703019CE B26 Digital Camera DMC-TZ3P DMC-TZ3PC DMC-TZ3PL DMC-TZ3EB DMC-TZ3EE DMC-TZ3EF DMC-TZ3EG DMC-TZ3EGM DMC-TZ3GC DMC-TZ3GD DMC-TZ3GK DMC-TZ3GN DMC-TZ3GT DMC-TZ3SG DMC-TZ2P DMC-TZ2PC DMC-TZ2PL DMC-TZ2EB DMC-TZ2EE DMC-TZ2EF DMC-TZ2EG DMC-TZ2EGM

distance measure ultrasonic transducer

Abstract: ceag ghg PBT GK 20 gl ultrasonic sensor Stahl 9303 ultrasonics circuits diagram 7 segment display 5011 K1207 ghg 44 ceag GK 74 transistor
Contextual Info: Level and Pressure Product Information Ultrasonics 1 5,00 m 2 5,00 m 1 2 3 4 VEGASON Contents Contents 1 Product description 1.1 2 Function and application 2.1 2.2 2.3 3 Meas. range . 52

Ericsson GM 12

Abstract: Ericsson GM 22 4302NG Ericsson reference manual GK transistor ericsson BMR 610 45 Ericsson AIR ericsson BMR 610 TP1 Thermal protection P1 TRANSISTOR
Contextual Info: Limited Internal Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also subject responsible if other EAB/FC/P Maria Rosendahl Approved PKB 4302NG EAB/FC/P Maria PI Rosendahl 1 (1) (4) No. Checked MICHORG 001 1/1301 52-EN/LZT - BMR 659

PMB4220

Abstract: pmb4420 PMB 4420 Siemens pmb 4420 transistor smd marking gk 5-PIN MARKING PAX PMB4819 smd diode marking KC L50Q 4819
Contextual Info: tM I fl s ?l s s if 3 No. SI IC PMB4819 CODE NO. ^ 7| fl- S s| g Siemens LTD. Seoul 726,Yeoksam-dong,Kangnam-gu Seoul.C.P.O Box 3001,Korea Tel: 5277-700 Fax: 5277-779 SIEMENS ICs for Communications Power Amplifier for DECT Application PMB 4819 Version 1.0

Contextual Info: TISP61CAP3 PROGRAMMABLE OVERVOLTAGE PROTECTOR C o p y rig h t 1997, Power Innovations Limited, UK SEPTEM BER 1994 - REVISED SEPTEM BER 1997 PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION • Programmable Voltage Triggered SCR with high Holding Current • Transistor Buffered Inputs for Low

MG50N2YS9

Abstract: P channel 50A IGBT
Contextual Info: GTR MODULE_ SILICON N CHANNEL IGBT MG50N2YS9 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf=l.Oys Max. trr=0.5ys(Max.) . Low Saturation Voltage: VcE(sat)=5.0V(Max.) . Enhancement-Mode

IGBT in TO92 Package

Abstract: OM6510SC OM6511SC
Contextual Info: OM 651OSC OM6511SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 500 Volt, 20 And 30 Amp, N-Channel IGBT With a Soft Recovery Diode In A Hermetic Metal Package F EA TU R E S Isolated Hermetic Metal P ackage High Input Impedance Low On-Voltage

TRANSISTOR GK 66 smd

Abstract: TRANSISTOR GKD smd 12v ballast ic HC4P5509B AN549 AN9607 HC-5509B TRANSFORMER ERL 35 GKD transistor
Contextual Info: HC-5509B Data Sheet July 1998 File Number 2799.6 ITU CO/Loop Carrier SLIC Features The HC-5509B telephone Subscriber Line Interface Circuit integrates most of the BORSCHT functions on a monolithic IC. The device is manufactured in a Dielectric Isolation DI

SWITCHING TRANSFORMER ERL 39

Abstract: GK transistor 72 tip22 HC1-5509A1-5 HC1-5509A1-9 HC3-5509A1-5 HC3-5509A1-9 HC4P5509A1-5 HC4P5509A1-9 HC-5509A1
Contextual Info: S E M I C O N D U C T O R NS EW RN 0 O F D 06 NDE 9A1R3 E M 55 OM REC See HC T O N IG DES HC-5509A1 PRELIMINARY May 1997 SLIC Subscriber Line Interface Circuit Features Description • DI Monolithic High Voltage Process • Compatible with Worldwide PBX and CO Performance

HALL EFFECT 21E

Abstract: GK 101 V6 LSYAC4L 412SX21-t MS-24523-22 MS24523-23 LS2A4L "Rocker Switch" 4SX1-T 611-0026
Contextual Info: 120 | SWITCHES Limit Switches The LS Series fits into places too small for most fully adjustable limit switches. The side rotary models can be adjusted for clockwise and/or counter-clockwise operation. The SZL-VL Series miniature models are designed for applications

Contextual Info: MICROCOUPLERS FOR HYBRID CIRCUITS m M C 0 2 2, M C 0 3 5, M C 074 n OPTOELECTRONIC PRODUCTS DIVISION FEATURES gk . • Variety of output circuits • Small size saves real estate • Guaranteed performance over full military tem­ perature range • Large thick film gold bonding pads

HC5503PRC

Abstract: HC5503PRCB HC5503PRCM HC-5504
Contextual Info: HC5503PRC Data Sheet December 1999 Low Cost SLIC For Large Telecom Switches • Wide Operating Battery Range -40V to -58V • Single Additional +5V Supply • 30mA Short Loop Current Limit • Ring Relay Driver • Switch Hook and Ring Trip Detect • Low On-Hook Power Consumption

HC-5502S

Abstract: AN549 AN9607 HC4P5509A1R3060 HC5509A1R3060
Contextual Info: S E M I C O N D U C T O R HC5509A1R3060 SLIC Subscriber Line Interface Circuit June 1997 Features Description • DI Monolithic High Voltage Process • High Temperature Alarm Output The HC4P5509A1R3060 telephone Subscriber Line Interface Circuit integrates most of the BORSCHT functions

GK transistor 72

Contextual Info: HC-5509B HARRIS S E M I C O N D U C T O R SLIC Subscriber Line Interface Circuit Ju n e 1 9 9 7 Features Description • Dl Monolithic High Voltage Process T h e H C -5 5 0 9 B tele p h o n e S u b s c rib e r Line Interface Circuit integrates m ost of the B O R S C H T functions on a m onolithic

IC AL 6001

Abstract: HC4P5509B-9
Contextual Info: HC-5509B HARRIS S E M I C O N D U C T O R ITU CO/Loop Carrier SLIC July 1998 Features Description • Dl Monolithic High Voltage Process The HC-5509B telephone Subscriber Line Interface Circuit integrates most of the BORSCHT functions on a monolithic IC. The device is manufactured in a Dielectric Isolation Dl

HC LS IC

Abstract: HC-5509B3999-003 HC9P5509B3999-003 2wire 4wire
Contextual Info: HC-5509B3999-003 TM SLIC Subscriber Line Interface Circuit March 1996 tle 9B 9 IC er r- Features Description • DI Monolithic High Voltage Process • Compatible with Worldwide PBX and CO Performance Requirements • Controlled Supply of Battery Feed Current with Programmable Current Limit

AN549

Abstract: AN9607 HC-5509B HC9P5509B-5 TRANSISTOR GKD smd
Contextual Info: CT O D U EM E N T R P TE AC O LE EPL OBS NDE D R 0 E 512 O MM HC5 RECData Sheet HC-5509B August 2003 FN2799.8 ITU CO/Loop Carrier SLIC Features The HC-5509B telephone Subscriber Line Interface Circuit integrates most of the BORSCHT functions on a monolithic

TCA940N

Contextual Info: SGS-THOMSON ^ 7 # . ^]D gK(Q iLi(gir^(Q)^D(gi TDA1908 8W AUDIO AMPLIFIER The TDA1908 is a m onolithic integrated circuit in 12 lead quad in-line plastic package intended for low frequency power applications. The mounting is compatible w ith the old types TBA800, TBA810S, TCA830S and TCA940N.

n0501

Contextual Info: Data Sheet N0501S R07DS0725EJ0100 Rev.1.00 Mar 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0501R. VCEO = 50 V IC DC = 1.0 A Miniature package SOT-23F (2SD1615: Package variation of 3pPoMM) PRODUCT LINEUP Part Number

TRANSISTOR REPLACEMENT GUIDE d882

Abstract: transistor D1876 TRANSISTOR D412 7403-09FR d1876 transistor SIL-PAD 2000 density transistors D1876 SIL-PAD 3223 Sil Pad A2000 0.015 TR-NWT-000930
Contextual Info: Thermally Conductive Interface Materials for Cooling Electronic Assemblies Sil-Pad S E L E C T I O N G U I D E All statements, technical information and recommendations herein are based on tests we believe to be reliable, and THE FOLLOWING IS MADE IN LIEU OF ALL WARRANTIES,

Contextual Info: HC-5509B HARRIS S E M I C O N D U C T O R SLIC Subscriber Line Interface Circuit J a n u a ry 1 9 9 7 Features Description • Dl Monolithic High Voltage Process T h e H C -5 5 0 9 B tele p h o n e S u b s c rib e r Line Interface Circuit • Compatible with Worldwide PBX and CO Performance