GHM PF Search Results
GHM PF Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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KZQ 55 - 12
Abstract: OZEN 915 lek 100K0 402-3K HOK-4 Pb NK 90Z 1fbg N/KZQ+55-12
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CN-IC-03-0120@ KZQ 55 - 12 OZEN 915 lek 100K0 402-3K HOK-4 Pb NK 90Z 1fbg N/KZQ+55-12 | |
GHM1540
Abstract: GHM3045 Iec384-14 GHM3145 GHM2145 223k x7r 50 cd 471k capacitor GHM1040 GHM1545 iec384
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C16E-3. C16E3 DC250V-3 15kV/AC250V C16E-3 GHM1000 GHM1500 AC250V GHM2000 GHM1540 GHM3045 Iec384-14 GHM3145 GHM2145 223k x7r 50 cd 471k capacitor GHM1040 GHM1545 iec384 | |
GHM3045
Abstract: GHM1540 GHM1530 GHM1545 GHM1030 GHM1535 GHM1040 GHM1500 GHM3145 GHM1000
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C16-4webPDF C16J4 DC250V-3 15kV/AC250V C16-4 GHM1000 GHM1500 GHM2000 GHM3000 GHM3045 GHM1540 GHM1530 GHM1545 GHM1030 GHM1535 GHM1040 GHM1500 GHM3145 GHM1000 | |
lf375
Abstract: 5SBA DT26 QT27 NMTC GHM 5 MH 3600 ZG 20XE-A
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T48vF48ff 44nnn3Ylkfea CN-C-03-0350K lf375 5SBA DT26 QT27 NMTC GHM 5 MH 3600 ZG 20XE-A | |
Contextual Info: SKM 800GA176D .0 2 RE Q8? * 5 + %41(/:-+( +;(0-=-(D Absolute Maximum Ratings Symbol Conditions IGBT 789, .S 2 RE Q8 B8 .S 2 PEH Q8 B8XY Trench IGBT Modules SKM 800GA176D 4;+0 PFHH 7 UVH C .0 2 UH Q8 EWH C PRHH C [ RH 7 PH ^+ .0 2 RE Q8 @VH C .0 2 UH Q8 ``H |
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800GA176D | |
VGM1-10
Abstract: GHM 25
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DS3510 250mA DS3510 VGM1-10 GHM 25 | |
GHM PFContextual Info: Rev 0; 2/08 I2C Gamma and VCOM Buffer with EEPROM Features The DS3510 is a programmable gamma and VCOM voltage generator which supports both real-time updating as well as multibyte storage of gamma/VCOM data in onchip EEPROM memory. An independent 8-bit DAC, two |
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DS3510 250mA DS3510 GHM PF | |
GM8-GM14
Abstract: Diode GHM eeprom 1011 GM1-GM14 88h-8Fh
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DS3514 10-bit 250mA DS3514 GM8-GM14 Diode GHM eeprom 1011 GM1-GM14 88h-8Fh | |
Contextual Info: Rev 1; 10/08 I2C Gamma and VCOM Buffer with EEPROM The DS3514 is a programmable gamma and VCOM voltage generator that supports both real-time updating as well as multibyte storage of gamma/VCOM data in onchip EEPROM memory. An independent 10-bit DAC, two 10-bit data registers, and four words of EEPROM memory are provided for each individually addressable |
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DS3514 10-bit 250mA DS3514 | |
DS3510Contextual Info: Rev 0; 2/08 I2C Gamma and VCOM Buffer with EEPROM Features ♦ 8-Bit Gamma Buffers, 10 Channels ♦ 8-Bit VCOM Buffer, 1 Channel ♦ 4 EEPROM Bytes per Channel ♦ Low-Power 400µA/ch Gamma Buffers ♦ I2C-Compatible Serial Interface ♦ Flexible Control from I2C or Pins |
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48-Pin DS3510T+ DS3510T DS3510 DS3510 | |
3135 ad hex nv
Abstract: AD 1X VGM1-10 DS3510
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DS3510 250mA inter10 DS3510 3135 ad hex nv AD 1X VGM1-10 | |
Contextual Info: R P 2 5 2 4,7h. P T C : , 7 '/./ C OPERATING UHM2 +/ - 5 X RANGE¡-55 GTGRAGG RANGE : - 6 5 THERMAL TIME DI5 I P AT I □ N POWER TG TG 125 150 C G N C T A NT :t ,0 CGN5 T A NT ! 2 , 5 RATIN G 125W G 25 C C CEC, MAX n W/ G MI N C , DERATE TG o 125 PFCICTANCP |
OCR Scan |
RP25C 125WG25 NAMEM512472U PIGI55 GTG12-472U | |
kbs 3ABContextual Info: ?=<10 B@C@9HIF< ?@>? EDK<F A9H:?@C> F<A9L =PM[\YPZ _ _ _ _ _ _ _ _ _ |BE> -Hiu{lnoplr pkw LPBM<ABG@ <:I:;BEBMR +:FI EH:= NI MH pkkk6 ,HMHK EH:= NI MH p~/ ,:Qi BGKNLA <NKK>GM nkkwjmFL zB>E><MKB< LMK>G@MAu FHK> MA:G oD5 d;>MP>>G <HBE :G= <HGM:<MLe ,:GN:E LPBM<A ?NG<MBHG :O:BE:;E> |
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3120F
Abstract: kob my hkf k
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8BAF68F 3120F kob my hkf k | |
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gde 103
Abstract: gde marking 307 GDE TRANSZORB gem gfx 77 marking GHS ggk 75 GHR TVS GGR 55 GFR 310
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188CA DO-214AB 50mVp-p gde 103 gde marking 307 GDE TRANSZORB gem gfx 77 marking GHS ggk 75 GHR TVS GGR 55 GFR 310 | |
gde 103
Abstract: diode marking GDE on semiconductor GGZ 47 gfx 5ca marking code GGt gfx transient marking code BFK marking ghm SMCJ 5.0A SMCJ GFR
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170CA 10/1000s E315008 gde 103 diode marking GDE on semiconductor GGZ 47 gfx 5ca marking code GGt gfx transient marking code BFK marking ghm SMCJ 5.0A SMCJ GFR | |
GHR TVS
Abstract: gde 103 marking ghm gfx 77 marking GHS bFK 96 smcj5.0a GDE GENERAL SEMICONDUCTOR MARKING bfm GGV 85 A
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188CA DO-214AB 50mVp-p GHR TVS gde 103 marking ghm gfx 77 marking GHS bFK 96 smcj5.0a GDE GENERAL SEMICONDUCTOR MARKING bfm GGV 85 A | |
u835Contextual Info: PTC : , 77/ G RÊ25C I 50 0 □HM0: + /-17. □ P E P A T I NG P A N C E ¡ -55 TC 125 C CTCRAGE P A N G E : - b 5 TG 150 C THERMAL T I M E CG N 0: T A GT : t, 0 0 EC, MA X D I C I P A T I □G GGGC T A GT i 2 , 5 n W/ C MI G FEWER P A T I GG 5WG25G , DERATE TE 1G5 |
OCR Scan |
5WG35C L-R-23648/9 MIC-R-GE64GXG u835 | |
Contextual Info: R Ê 2 5 C I 12 0 □ H M 2 + / - 1 0 X PTC ! .7 y./ c O P E R A T I N G R A N G E ¡-55 TG 125 G 2 T G E A G G R A N G E ! - 5 5 TG 150 C T H E R M A L T I M E L G N 2 T A N T >10 2 EC, MAX H I2 2 1 F A T I G N C G N 2 T A N T :2 ,5 n W / 2 M I N F E W E R F A T I N G 0 b £ W @ £ 5 C ,D E P A T E TG 125 |
OCR Scan |
RANGEi-55 01R1R QTG10-121G | |
GFM, TVS
Abstract: transzorb marking code GEM marking code bdu marking code BFK 94 tr/gfx 77
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188CA DO-214AB 50mVp-p GFM, TVS transzorb marking code GEM marking code bdu marking code BFK 94 tr/gfx 77 | |
SMCJ7.5 CA
Abstract: gde 103
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188CA DO-214AB 50mVp-p SMCJ7.5 CA gde 103 | |
transzorb marking code GEM
Abstract: general semiconductor marking code GFX ghg 712 marking code GDD gde 103 ghg 122 307 GDE
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188CA DO-214AB 50mVp-p transzorb marking code GEM general semiconductor marking code GFX ghg 712 marking code GDD gde 103 ghg 122 307 GDE | |
gfu 65Contextual Info: SMCJ5.0 thru 188CA Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 188V Peak Pulse Power 1500W DO-214AB SMC J-Bend Cathode Band d e d n nge e t x E e Ra g a t l Vo Mounting Pad Layout 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) |
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188CA DO-214AB 50mVp-p gfu 65 | |
bel 188 transistor
Abstract: GHR TVS diode marking GDE on semiconductor transzorb marking code GEM marking code GGt transistor BEL 188 BDW 65 C transistor BFD 162 BFM General Semiconductor TRANSZORB gem
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188CA DO-214AB DO-214AB 50mVp-p 1-May-02 bel 188 transistor GHR TVS diode marking GDE on semiconductor transzorb marking code GEM marking code GGt transistor BEL 188 BDW 65 C transistor BFD 162 BFM General Semiconductor TRANSZORB gem |