GH MOSFET Search Results

a2198

Abstract: 2SK1388 A2-198
Contextual Info: 2SK1388 FUJI POWER M O S-FET N-C HANNEL SILICON POWER MOS-FET F-III SERIES •Outline Drawings ■ leatures • H gh current • Low on-resistance • N d secondary breakdown • Low driving power • H gh forward Transconductance ■Applications • Motor controllers

a2198

Abstract: 2SK1388 A2-198 a2200 1r1h A2199
Contextual Info: 2SK1388 FUJI POWER M O S -FE T N-C H ANNEL SILICON POWER MOS-FET F-III SERIES lOutline Drawings •features 1H gh current 1Low on-resistance ' N d secondary breakdown J •Low driving power 1H gh forward Transconductance c b® ■Applications 12 0.8*“

Contextual Info: PD-97440B GH-SERIES HIGH RELIABILITY, HIGH EFFICIENCY RADIATION HARDENED DC-DC CONVERTER 28V Input, Single Output Description The GH series is a family of low voltage single output DC-DC converters. They are specifically designed in response to the need for low voltage at moderate current

Contextual Info: PD-97440B GH-SERIES HIGH RELIABILITY, HIGH EFFICIENCY RADIATION HARDENED DC-DC CONVERTER 28V Input, Single Output Description The GH series is a family of low voltage single output DC-DC converters. They are specifically designed in response to the need for low voltage at moderate current

GH2803R3S

Abstract: MIL-PRF-883 5962-1021701KXX
Contextual Info: PD-97440C GH-SERIES HIGH RELIABILITY, HIGH EFFICIENCY RADIATION HARDENED DC-DC CONVERTER 28V Input, Single Output Description The GH series is a family of low voltage single output DC-DC converters. They are specifically designed in response to the need for low voltage at moderate current

LTUG

Contextual Info: 2SK2021-01 FUJI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • features Outline Drawings • H gh speed switching • Low on-resistance • No secondary breakdown • Low. driving power • H gh voltage • V, s= +30V Guarantee • Avalanche-proof

Contextual Info: 2SK2254-01L. S FUJI POWER M O S-FET IM-CHANNEL SILICON POWER MOS-FET _ _ Ä - F A P - I I A S E R I E S • Features • Hi gh speed switching • Lbiiv on-resistance • Nc secondary breakdown • Low driving power • Hi gh voltage

2SK2004-01

Abstract: 2SK2004-01L T151
Contextual Info: 2SK2004-01 L. S FUJI PO W ER M O S-F E T N-CHANNEL SILICON POWER MOS-FET FAP-IIASERIES • features Outline Drawings • H gh speed switching • Low on-resistance • N d secondary breakdown • Low driving power • H gh voltage • V ;s= + 30 V Guarantee

Diode GFT

Contextual Info: 2SK2257-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET F A • Features P - I I A S E R I E S Outline Drawings • H gh speed switching • Low on-resistance • N secondary breakdown • Le w driving power • H gh voltage • V,5 = + 30V Guarantee

Contextual Info: 2SK2004-01L, S F U J I P O W E R M O S -F E T N-C HANNEL SILICON POWER MOS-FET FAP-IIA SERIES • features IOutline Drawings • H gh speed switching • Lnw on-resistance • N d secondary breakdown • Low driving power • H gh voltage • V-s= ± 3 0 V Guarantee

a101 transistor

Contextual Info: UNISONICTECHNOLOGIESCO., LTD L1136 Preliminary CMOS IC H I GH RI PPLE-REJ ECT I ON LOW DROPOU T H I GH OU T PU T CU RREN T CM OS V OLT AGE REGU LAT OR ̈ DESCRI PT I ON The UTC L1136 is an extremely low dropout regulator providing designers with low current dissipation, high output voltage accuracy

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UPS1702 Preliminary LINEAR INTEGRATED CIRCUIT H I GH PERFORM AN CE CU RREN T M ODE POWER SWI T CH  DESCRI PT I ON The UTC UPS1702 is an integrated PWM controller and Power MOSFET specifically designed for current mode operation

PSBM 24

Abstract: PSBM24 PSbm24-05
Contextual Info: ECO-PACTM 2 PSBM 24/05 Power MOSFET Stage ID25 VDSS RDS on for Boost Converters Module for Power Factor Correction K Preliminary Data Sheet GH CM L = 35 A = 500 V = 0.12 Ω VX VRSM VRRM Type (V) (V) 600 500 PSBM 24/05 1 MOSFET Symbol Test Conditions VDSS

PE4210

Contextual Info: Advance Information PE4210 SPDT Low Insertion Loss MOSFET RF Switch Features • Single 3.0 V Power Supply • Low Insertion loss: . 39dB at 1 GHz, .42dB at 2 GHz • High isolation of 32 dB at 1 GHz, 26 dB at 2 GH • Typical1 dB compression = +10dBm • CMOS logic control

Contextual Info: SP6120B Low Voltage, AnyFETTM, Synchronous ,Buck Controller Ideal for 2A to 10A, High Performance, DC-DC Power Converters • Optimized for Single Supply, 3V - 5.5V Applications N/C 1 16 BST ■ High Efficiency: Greater Than 95% Possible 15 GH ENABLE 2

4TPB470M

Abstract: 6TPB330M FDS6375 FDS6690A MBR0530 SP6120B STPS2L25U
Contextual Info: SP6120B Low Voltage, AnyFETTM, Synchronous ,Buck Controller Ideal for 2A to 10A, High Performance, DC-DC Power Converters • Optimized for Single Supply, 3V - 5.5V Applications N/C 1 16 BST ■ High Efficiency: Greater Than 95% Possible 15 GH ENABLE 2

SP6120B

Contextual Info: SP6120B Low Voltage, AnyFETTM, Synchronous ,Buck Controller Ideal for 2A to 10A, High Performance, DC-DC Power Converters • Optimized for Single Supply, 3V - 5.5V Applications N/C 1 16 BST ■ High Efficiency: Greater Than 95% Possible 15 GH ENABLE 2

"Schottky Diode"

Contextual Info: SP6120B Low Voltage, AnyFETTM, Synchronous ,Buck Controller Ideal for 2A to 10A, High Performance, DC-DC Power Converters • Optimized for Single Supply, 3V - 5.5V Applications N/C 1 16 BST ■ High Efficiency: Greater Than 95% Possible 15 GH ENABLE 2

FDS6375

Abstract: 4TPB470M 6TPB330M FDS6690A MBR0530 SP6120B STPS2L25U
Contextual Info: SP6120B Low Voltage, AnyFETTM, Synchronous ,Buck Controller Ideal for 2A to 10A, High Performance, DC-DC Power Converters • Optimized for Single Supply, 3V - 5.5V Applications N/C 1 16 BST ■ High Efficiency: Greater Than 95% Possible 15 GH ENABLE 2

4TPB470M

Abstract: 6TPB330M FDS6375 FDS6690A MBR0530 SP6120 STPS2L25U
Contextual Info: SP6120 Low Voltage, AnyFETTM, Synchronous,Buck Controller Ideal for 2A to 10A, High Performance, DC-DC Power Converters FEATURES N/C 1 16 BST • Optimized for Single Supply, 3V - 5.5V Applications 15 GH ENABLE 2 ■ High Efficiency: Greater Than 95% Possible

Contextual Info: 2SK2029-01 L, S FUJI POWER MOS-FET _ _ _ _ N-CHANNEL SILICON POWER MOS-FET -F A P - I I A S E R I E S O utline D raw ings • Features • Hi gh sp ee d s w itc h in g

2SK1278

Abstract: SC-65
Contextual Info: 2SK1278 FUJI POWER MOS-FET N-OHANNEL ENHANCEMENT TYPE MOS-FET F-V SERIES • features lOutline Drawings • lr elude fast recovery diode • H gh voltage • Low driving power ■Applications • IV otor controlers • Irverters • Cioppors ¡Equivalent Circuit Schematic

Contextual Info: SP6120 Low Voltage, AnyFETTM, Synchronous ,Buck Controller Ideal for 2A to 10A, High Performance, DC-DC Power Converters FEATURES N/C 1 16 BST • Optimized for Single Supply, 3V - 5.5V Applications 15 GH ENABLE 2 ■ High Efficiency: Greater Than 95% Possible

A3946

Abstract: A3946KLB A3946KLP SOIC-16 TSSOP-16
Contextual Info: Data Sheet 29319.150f 3946 Preliminary Data Sheet Subject to Change Without Notice February 2, 2004 Half-Bridge Power MOSFET Controller A3946KLB SOIC Scale 1:1 VREG 1 16 VBB CP2 2 15 VREF CP1 3 14 DT GND 4 13 GND GL 5 12 RESET S 6 11 GH 7 10 IN1 BOOT 8 9 IN2