GH 09 Search Results

510-9314

Abstract: Millmax 124-13 510-9320 SWC 107 694-13
Contextual Info: PRECICONTACT to MILL-MAX Cross Reference List PRECICONTACT# AXP 13 085 TL A 72 BXP 16 175 TL A 23 CL XXX TL A 31 CNT XXX GH M 31 CNT XXX GH N 31 CNT XXX GH O 31 CNT XXX GH P 31 CNT XXX TL M 30 CNT XXX TL M 31 CNT XXX TL M 36 CNT XXX TL N 30 CNT XXX TL N 31

GH-700

Abstract: GH-820 GH-600 GH-601
Contextual Info: Hall Sensors Gallium Arsenide GH Series Description The GH Series Hall sensors are four-terminal solid-state devices that produce an output voltage, VH , proportional to the product of the input current, I c , and the magnetic flux density, B. The GH-600 Hall sensor uses a lead strip

GH-700

Contextual Info: Gallium Arsenide GH Series Hall Sensors Description The GH Series Hall sensors are four-terminal solid-state devices that produce an output voltage, VH , proportional to the product of the input current, I c , and the magnetic flux density, B. The GH-600 Hall sensor uses a lead strip

Contextual Info: 2-1 TEL: 852-26909605 FAX: 852-26909606 E-mail: grandhalo@hutchcity.com b PHOTO TRANSISTOR 光 電 晶 體 Rev: A Date: 2002/10/19 GH-309 Series Electro-Optical Characteristics: Code for parts Material GH-XXXXX Rise Time Fall Time BVceo Min V TN2469TK-09E

Contextual Info: 2-1 TEL: 852-26909605 FAX: 852-26909606 E-mail: grandhalo@hutchcity.com b INFRARED EMITTING DIODE 紅外線發射二極體 Rev: B Date: 2005-4-10 GH-309 Series Electro-Optical Characteristics: Code for parts GH-XXXXX Material ILFZ69TK-09E ISFF69TK-09E VF V

Contextual Info: 2-1 TEL: 852-26909605 FAX: 852-26909606 E-mail: grandhalo@hutchcity.com b MINI TYPE LED LAMPS 小型化發光二極體指示燈 Rev: B Date: 2002/10/19 GH-5166-09 Multi-Color Series Electro-Optical Characteristics: Code for parts GH-XXXXX Lighting Color Material

Contextual Info: 2-1 TEL: 852-26909605 FAX: 852-26909606 E-mail: grandhalo@hutchcity.com b MINI TYPE LED LAMPS 小型化發光二極體指示燈 Rev: C Date:2005/4/8 GH-5166-09 Single-Color Series Electro-Optical Characteristics: Code for parts GH-XXXXX Lighting Color Material

Rod Resistors

Contextual Info: TERMINATIONS AND RESISTORS ROD RESISTORS TERMINATIONS AND RESISTORS Terminations constructed with 50Q alumina or beryllia rod resistors will yield maximum VSW R of 1.10 at 4 GH z and 1.20 at 12 GH z when properly mounted. SPECIFICATIONS: Power Dimensions Model #

Contextual Info: 2-1 TEL: 852-26909605 FAX: 852-26909606 E-mail: grandhalo@hutchcity.com b MINI TYPE LED LAMPS 小型化發光二極體指示燈 Rev: C Date: 2005-4-9 GH-5166-09 Full-Color Series Electro-Optical Characteristics: Code for parts GH-XXXXX WZE766TA-09E WZE566TA-09H

a2198

Abstract: 2SK1388 A2-198
Contextual Info: 2SK1388 FUJI POWER M O S-FET N-C HANNEL SILICON POWER MOS-FET F-III SERIES •Outline Drawings ■ leatures • H gh current • Low on-resistance • N d secondary breakdown • Low driving power • H gh forward Transconductance ■Applications • Motor controllers

a2198

Abstract: 2SK1388 A2-198 a2200 1r1h A2199
Contextual Info: 2SK1388 FUJI POWER M O S -FE T N-C H ANNEL SILICON POWER MOS-FET F-III SERIES lOutline Drawings •features 1H gh current 1Low on-resistance ' N d secondary breakdown J •Low driving power 1H gh forward Transconductance c b® ■Applications 12 0.8*“

LTUG

Contextual Info: 2SK2021-01 FUJI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • features Outline Drawings • H gh speed switching • Low on-resistance • No secondary breakdown • Low. driving power • H gh voltage • V, s= +30V Guarantee • Avalanche-proof

Contextual Info: 2SK2254-01L. S FUJI POWER M O S-FET IM-CHANNEL SILICON POWER MOS-FET _ _ Ä - F A P - I I A S E R I E S • Features • Hi gh speed switching • Lbiiv on-resistance • Nc secondary breakdown • Low driving power • Hi gh voltage

Contextual Info: DR/4W1NG MA DE T H I S DRAWING IN 4 THIRD ANGLE IS UNPUBLISHED. COPY RI GH T 19 <Z> PROJECTION LOC RELEASED FOR PUBLICATION AMP BY IN CORPORATED. CM ALL INTERNATIONAL R I GH TS RESERVED. DIST 54 REVISIONS ZONE LTR DESCRIPTION DATE REACT -2 THRU -24 AND

GH-701

Contextual Info: Gallium Arsenide GH-701 GH-701Hall sensor is a four terminal solid-state device that produces an output voltage, V H, proportional to the product of the input current, I c , and the magnetic flux density, B. The composition is made of Gallium Arsenide GaAs encapsulated in a surface mount package.

Contextual Info: DATE SYM REVISION RECORD 9/16/98 1 1 /1 /9 9 - ISSUED A UPDATE ADD TOLERANCE AUTH, DR, CK, NT GH NT GH 0 , 668 0, 615 0 , 112 j~ ±0. 010 I 0, 098 TYP O' 107 ±0, 007 0, 405 0, 079 ± 0, 002 0, 098 ±0 , 002 ^ 4 - - 0, 107 ±0, 003 0, 224 ± 0, ACTUAL SIZE

AS5C2008

Abstract: QML-38534 WS256K8-100CQ WS256K8-120CQ WS256K8-45CQ WS256K8-55CQ WS256K8-70CQ WS256K8-85CQ 55cq WS256K8-70CQA
Contextual Info: REVISIO N S LTR D E S C R IP TIO N DATE YR-mo -da APPRO VED D Table I; C hanged the max limit for lcc for device types 06 throu gh 09 98-06 -22 K.A. C ottongim from 150 m A to 180 mA. C hanged the m ax limit for lCCDR for device _ types 06 throu gh 09 from 6.4 m A to 7.0 mA. -

GH-038

Abstract: photo coupler specification high current igbt driver AC2500 SANREX igbt driver driver circuit design for IGBT module igbt gate driver peak photo coupler
Contextual Info: HYBRID GATE DRIVER IC FOR IGBT GH-038 SanRex GH-038 is Hybrid Gate Driver IC for IGBT. ● High Voltage isolation by Photo Coupler to drive IGBT up to dual 600V, 300A module ● Operate with single power source ● Support to high-density system design ● Built-in photo coupler with resistor（330Ω）

2SK2004-01

Abstract: 2SK2004-01L T151
Contextual Info: 2SK2004-01 L. S FUJI PO W ER M O S-F E T N-CHANNEL SILICON POWER MOS-FET FAP-IIASERIES • features Outline Drawings • H gh speed switching • Low on-resistance • N d secondary breakdown • Low driving power • H gh voltage • V ;s= + 30 V Guarantee

GH-039

Abstract: SANREX igbt driver photo coupler specification
Contextual Info: HYBRID GATE DRIVER IC FOR IGBT GH-039 SanRex GH-039 is Hybrid Gate Driver IC for IGBT. ● High Voltage isolation by Photo Coupler to drive IGBT up to dual 600V, 300A module ● Operate with single power source ● Support to high-density system design ● Built-in Photo Coupler with resistor（330Ω）

Contextual Info: Panasonic 7 i»s=5i»WI3Vfytt Aluminium * î w r m r n > Aluminium Electrolytic Capacitors Type Screw Terminal Series GYU/GH) = .= .o h w m □ V y V tt GYU/GH Type Screw terminal Series: Japan • S IK H : 85 °C2000 h • <GY U > <J - X > < S e rie s G Y U >

Contextual Info: ELECTRICAL D A T A : Characteristic impedance Frequency range VSWR 50 O h m s DC - 12,4 GHz 1 GHz < 1,05 2 GHz < 1,10 4 GH z < 1,20 12,4 GH z < 1,20 1 W Power rating MATERIALS : Body Inner conductor B r a s s , plating O ptargen B r a s s , plating Au E Allqemeintotleranzen

Contextual Info: 4 DR/4 W1 N G MADE IN T H IR D ANGLE T H I S DRAWI NG IS UNPUBLISHED. COPY RI GH T 19 <Z> PRO JECTIO N LOC RELEASED FOR PUBLICATION AMP BY IN CORPORATED. CM ALL INTERNATIONAL R I GH TS RESERVED. DIST 54 REVISIONS ZO N E LTR DESCRIPTION DATE REACT -14 THRU -21,-23,-24, AND

Contextual Info: 2SK2004-01L, S F U J I P O W E R M O S -F E T N-C HANNEL SILICON POWER MOS-FET FAP-IIA SERIES • features IOutline Drawings • H gh speed switching • Lnw on-resistance • N d secondary breakdown • Low driving power • H gh voltage • V-s= ± 3 0 V Guarantee