GGR 55 Search Results

P215592

Abstract: G210157 F210156 C220710 R216192 F215170 d330283 NH000GR69V100PV F210156C S330296
Contextual Info: Semiconductor fuses Semiconductor AC fuses Protistor Square-body Fuses PSC gGR sizes 000/00 gGR - 690 VAC DIN 00/000 (full range) gGr: two functions A combination of: Power supply cable protection (gG curve) F : Réf. D302108 MC: Réf. F210156C • Compliance with the standardized gate values for gG

Contextual Info: 879 @RMN>G @>I ; CJLH @ EBLHBNF@>GGR MB>GBA BGB@NLJ H>DIBNF@ LBG>R EC<:8< CWSab_W` 8 [dgb B IdVY XVc WZ 6@ 6<RY2X2 G^\] VbW^Zci Veea^XVW^a^in @aa bZiVa lZaYZY XdchigjXi^dc GZgbZi^XVaan lZaYZY VcY bVg`ZY Wn aVhZg >H?FBIN >A>KN>?FGFNR h g f @bW^Zci \gVYZ w99

pj 929

Contextual Info: 98; @RMN>G @>I 9 DLJOK I7J7 @JIN>@N EBLHBNF@>GGR MB>GBA BGB@NLJ H>DIBNF@ LBG>R EC<:9; CWSab_W` JeWZ YWd X[ 6@ 6<SZ2Y2 G_]^ WcX_[dj Wffb_YWX_b_jo @bb c[jWb m[bZ[Z YedijhkYj_ed Eki_d] iebZ[h_d] WdZ cWha[Z Xo bWi[h Bed\ehc je FIA:9A1= .Dgk_lWb[dj je KHJ1NOE17=45:/

GE764

Contextual Info: 97: @RMN>G @>I : CJLH @ EBLHBNF@>GGR MB>GBA BGB@NLJ H>DIBNF@ LBG>R QFNE @JFG NL>IMFBIN MOKKLBMMFJI EC<;:8 CWSab_W` S^i] Xd^a igVch^Zci hjeegZhh^dc EV^ajgZ gViZ aZkZa XVc WZ aZkZa J G^\] VbW^Zci Veea^XVW^a^in @aa bZiVa lZaYZY XdchigjXi^dc GZgbZi^XVaan lZaYZY VcY bVg`ZY Wn aVhZg

G89 DATASHEET

Abstract: gc7mfsb q526
Contextual Info: E>GC7MFSB @LRMN>G @>I EBLHBNF@>GGR MB>GBA LBG>R QFNE 98> GJ>A EC<:9; EZVijgZh 1 IdVY XVc WZ 54@ 6<RY2X2 1 G^\] VbW^Zci Veea^XVW^a^in 1 5 Edgb B 1 @aa bZiVa lZaYZY XdchigjXi^dc 1 GZgbZi^XVaan lZaYZY VcY bVg`ZY Wn aVhZg >H?FBIN >A>KN>?FGFNR @bW^Zci \gVYZ g @bW^Zci iZbeZgVijgZ

55BV

Abstract: 5171 SZ
Contextual Info: E>GC8MFSB @LRMN>G @>I MBIMFNFPB EBLHBNF@>GGR MB>GBA BGB@NLJ H>DIBNF@ LBG>R EC<:9; EZVijgZh 2 2 2 2 2 OZch^i^kZ ineZ Bd^a edlZg XVc WZ 429S EV^ajgZ gViZ aZkZa XVc WZ aZkZa J @aa bZiVa lZaYZY XdchigjXi^dc GZgbZi^XVaan lZaYZY VcY bVg`ZY Wn aVhZg >H?FBIN >A>KN>?FGFNR

bz 79c

Contextual Info: 87; @RMN>G @>I 9 CJLH @ EBLHBNF@>GGR MB>GBA BGB@NLJ H>DIBNF@ LBG>R EC<98: CWSab_W` JeWZ YWd X[ 5@ 6<SZ2Y EW_bkh[ hWj[ b[l[b YWd X[ b[l[b K G_]^ WcX_[dj Wffb_YWX_b_jo @bb c[jWb m[bZ[Z YedijhkYj_ed Eki_d] iebZ[h_d] WdZ cWha[Z Xo bWi[h Bed\ehc je FIA:9A1= .Dgk_lWb[dj je KHJ1NOE17=45:/

FIA5486

Contextual Info: E>GC6MFSB @LRMN>G @>I EBLHBNF@>GGR MB>GBA LBG>R QFNE 9 CJLH @ 87> GJ>A EC<:8; CXTbc`Xa 2 JeWZ YWd X[ 54@ 6<SZ2Y2 2 G_]^ WcX_[dj Wffb_YWX_b_jo 2 6 Eehc B 2 @bb c[jWb m[bZ[Z YedijhkYj_ed 2 G[hc[j_YWbbo m[bZ[Z WdZ cWha[Z Xo bWi[h Bed\ehc je FIA5486@16446 .Dgk_lWb[dj je KHJ1O19;9;/

CI 7424

Abstract: GP 729 gp 542 28je IIKH KEHC
Contextual Info: E>GC8MFSB @LRMN>G @>I EBLHBNF@>GGR MB>GBA BGB@NLJ H>DIBNF@ LBG>R QFNE BMN>?GFMEBA LBGF>?FGFNR EC<;:9 E[Wjkh[i 4 4 4 4 4 EW_bkh[ hWj[ YWd X[ b[l[b J NkWb_\_[Z Xo B^_dW c_b_jWho ijWdZWhZ G_]^ WcX_[dj Wffb_YWX_b_jo C_eZ[ jof[ fheZkYji WlW_bWXb[ G[hc[j_YWbbo m[bZ[Z WdZ cWha[Z Xo bWi[h

CX 879

Contextual Info: 879 @O?F@ FI@E 9 CJLH @ EBLHBNF@>GGR MB>GBA G>N@EFID LBG>R EC<;8: CVS`a^V_ 3 EehY[ XWbWdY[Z bWjY^_d] h[bWo 3 54@ YedjWYji im_jY^_d] YWfWX_b_jo 3 EW_bkh[ hWj[ YWd X[ J b[l[b 3 G_]^ WcX_[dj Wffb_YWX_b_jo 3 @bb c[jWb m[bZ[Z YedijhkYj_ed 3 G[hc[j_YWbbo m[bZ[Z WdZ cWha[Z Xo bWi[h

marking code SM diode

Abstract: GGP DIODE marking SM 98 GGT DIODE GHM DIODE j78 transistor marking CODE J36 diode GGT DIODE ON GGR diode ggk diode
Contextual Info: SURFACE MOUNT TVS DIODE Electrical Characteristics, 33 to 170 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage

marking code SM diode

Abstract: GGR diode marking SM 98 GGT DIODE marking CODE J36 diode GGP DIODE marking code GGt GGT DIODE ON sm 58 b marking code SM CM
Contextual Info: SURFACE MOUNT TVS DIODE Electrical Characteristics, 33 to 170 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage

Contextual Info: TO SHIBA TENTATIVE T6L12 TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T6L1 2 GATE DRIVER FOR TFT LCD PANELS The T6L12 is a 256-channel output gate driver for TFT LCD panels. Since this device accepts external input of Unit: mm the panel drive voltage, allowing you to change the lowlevel output voltage, thus, this device can be used for

777C

Contextual Info: E E 2 5 2 :22 Ü Û EHME P T C : . 7 '/. / C □ P E P A T I NG +/ - 5 X PA N G E i-55 CTGRAGG F : ANGE ! - 6 5 THERMAL TIME H I G G I F’ A T I G N FEWER TECTED EIE TG TG 125 150 C E N C T A N T : t, 0 GGNGT A N T : 2 , 5 P A T I NE 5WE25C G G CEC. MA X

BDP 281

Contextual Info: Surface Mount Transient Voltage Suppressors 1500 W Part Number "Gull Wing" "Mod.J-Bend" Device Marking Code Reverse Stand-Off Voltage Breakdown Voltage @ Test Curr. Min. Max. Maximum Clamping Vltg. @ IPPM Operating Junction and Storage Temperature: -55 oC to 150 oC

Contextual Info: TOSHIBA T6L12 TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T6L1 2 GATE DRIVER FOR TFT LCD PANELS The T6L12 is a 256-channel output gate driver for TFT LCD panels. Since this device accepts external input of the panel drive voltage, allowing you to change the lowlevel output voltage, thus, this device can be used for

GHR TVS

Abstract: gde 103 marking ghm gfx 77 marking GHS bFK 96 smcj5.0a GDE GENERAL SEMICONDUCTOR MARKING bfm GGV 85 A
Contextual Info: SMCJ5.0A thru 188CA Surface Mount TRANSZORB Transient Voltage Suppressor Stand-off Voltage 5.0 to 188V Peak Pulse Power 1500W DO-214AB SMC J-Bend 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) ed e d n Exte e Rang g a t l Vo 0.185 MAX. (4.69 MAX.)

gde 103

Abstract: gde marking 307 GDE TRANSZORB gem gfx 77 marking GHS ggk 75 GHR TVS GGR 55 GFR 310
Contextual Info: SMCJ5.0A thru 188CA Surface Mount TRANSZORB Transient Voltage Suppressor Stand-off Voltage 5.0 to 188V Peak Pulse Power 1500W DO-214AB SMC J-Bend 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) ed e d n Exte e Rang g a t l Vo 0.185 MAX. (4.69 MAX.)

gde 103

Abstract: diode marking GDE on semiconductor GGZ 47 gfx 5ca marking code GGt gfx transient marking code BFK marking ghm SMCJ 5.0A SMCJ GFR
Contextual Info: 1500W Surface Mount Transient Voltage Suppressor SMCJ 5.0A - 170CA 1500W Surface Mount Transient Voltage Suppressor Features • Stand-off voltage from 5.0 to 170 volts • Glass passivated junction • 1500W peak pulse power capability with a 10/1000 s waveform,

gfx 5ca

Contextual Info: 1/2 1 , 5 0 0 W T R A N S I E N T V O LTA G E S U P P R E S S O R S UNI-DIRECTIONAL AND BI-DIRECTIONAL CLAMPING • LOW PROFILE PACKAGE WITH BUILT IN STRAIN RELIEF AND UL 94V-0 PLASTIC MATERIAL • TYPICAL IR LESS THAN 1µA ABOVE 10V AND EXCELLENT CLAMPING CAPABILITY

marking code SM diode

Abstract: GGV diode GGT DIODE marking SM 98 tvs diode sma nu GHM 25 DIODE GHM DIODE ph 41 zener diode ggr 86 176/Diode Zener C 47 pH
Contextual Info: SURFACE MOUNT TVS & Zener Diodes TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage

ph 41 zener diode

Abstract: J150A 13.8 8w zener diode GHM DIODE marking code SM diode Diode GHM GGR diode sg 82 do-214aB marking ghm J78A
Contextual Info: SURFACE MOUNT TVS & Zener Diodes TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage

SMCJ7.5 CA

Abstract: gde 103
Contextual Info: SMCJ5.0 thru 188CA Surface Mount TRANSZORB Transient Voltage Suppressor Stand-off Voltage 5.0 to 188V Peak Pulse Power 1500W DO-214AB SMC J-Bend 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) ed e d n Exte e Rang g a t l Vo Mounting Pad Layout 0.185 MAX.

Contextual Info: E R 2 5 2 :27 Ü Û EHME P T C : . 7 '/. / C +/ - 5 X □ P E P A T I NG P A N G E i - 5 5 TG 1 2 5 G C T G R A G G F:ANGE ! - 6 5 TG 1 5 0 G T H E R M A L T I M E C E N C T A N T : t, 0 C E C . MA X H I G GI F’ A T I G N G G N G T A N T : 2 , 5 n W/ G M I N