GG 84 Search Results

B219237

Abstract: 63213 NFC
Contextual Info: General Purpose Fuses IEC General Purpose Fuses IEC Ferrule Fuses gG 400V to 690V with/without Striker gG 8x32, 10x38, 14x51, 22x58 Ratings – gI-gG with Striker Size Rated mm x mm Current In (A) Rated Previous Voltage Reference 2 4 6 8 10 12 16 20 25 32

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS GG Snap-in Terminal Type, 105 °C Ultra-Smaller-Sized series One rank smaller case sized than GN series. Suited for equipment down sizing. Compliant to the RoHS directive 2002/95/EC . GN Smaller GG Smaller GL Specifications

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS GG Snap-in Terminal Type, Ultra-Smaller-Sized, Wide Temperature Range series One rank smaller case sized than GN series. Suited for equipment down sizing. Adapted to the RoHS directive 2002/95/EC . GN Smaller GG Specifications

Contextual Info: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S64163LF-GG(S) CMOS SDRAM 4Mx16 Mobile SDRAM 52CSP (TCSR & PASR, -25°C ~ 85°C Operation) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S64163LF-GG(S) CMOS SDRAM Revision History

Contextual Info: B@898@6N JGD;I I?D;P @TQ^_\T] 0 97C mqcn]bcha ][j[]cns 0 Cjjfc][\f_ ni chp_ln_l om_^ `il jbinipifn[c] jiq_l a_h_l[ncih msmn_gm 0 K^_[f `il VQT 0 74;gg ]ihn[]n a[j .]igjfc[hn ni Golij_[h Qbinipifn[c] Tn[h^[l^ WFG678<* 74>gg ]ihn[]n a[j .]igjfc[hn ni KGE <876?3838677*

Contextual Info: 841A«841B gg National H i Semiconductor 74FCT841A«74FCT841B 10-Bit Transparent Latch with TRI-STATE Outputs General Description Features The bus interface latch is designed to eliminate the extra packages required to buffer existing latches and provide ex­

Contextual Info: F-207 POWER/Q2 SIGNAL COMBO gg£ SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?QMS-PC or www.samtec.com?QFS-PC Insulator Material: Liquid Crystal Polymer t o QMS NO. OF PINS PER ROW Mates with: I i QFS-PC -026, -052, -078

B238B

Contextual Info: 642-*B ?A0:7;7/@A>3 ?75;/9 >39/E 4JFVWTJU ^ 9eW ^c_f_]nlc] mnl_hanb /\_nq_h ]icf [h^ ]ihn[]nm0 ^ Tola_ qcnbmn[h^ pifn[a_ oj ni <666WBD2 g_nm GDD Q[ln <> [h^ U_f_]il^c[ ^ Nch4 ]l_j[a_ cm 84;gg /\_nq_h ]icf [h^ ]ihn[]n02 Nch4 ]f_[l[h]_ cm 846gg /\_nq_h ]icf [h^ ]ihn[]n0

royal fuse

Abstract: 5sb25 SIEMENS NH FUSE
Contextual Info: TABLE OF CONTENTS MINIATURE DIAZED 20 Amps. • • • • NEOZED CYLINDER NH "Bottle" fuses in ve sizes to 200 Compact fuses in three sizes to Standard cylinder fuses are Amps. 100 Amps. available in four sizes to 125 Amps, with or without blown • gL/gG - Slow Blow

Contextual Info: Ordering number: EN & 4088 T ' 77'Û7~ U | SANYO SEMICONDUCTOR CORP S3E » 7 cH 7 Q 7 b GGÜ'lflSS I TSAJ 530 CMOS LSI LC7471 No. % 4088 i SAiYO i On-screen Display Controller for NTSC-format Video Preliminary OVERVIEW PINOUT The LC7471 is a video display controller for superim­

Contextual Info: MITSUBISHI RF POWER MODULE M68701 SILICON MOS FET POWER AMPLIFIER, 820-851 MHz, 6W, FM PORTABLE RADIO OUTLINE DRAWING BLOCK DIAGRAM D im ensions in mm PIN: ABSOLUTE MAXIMUM RATINGS Symbol Supply voltage V gg Gate bias voltage RF IN PU T d V G G G ATE BIAS S U P P LY

F799

Abstract: NL JH CHN 648 CHN 649
Contextual Info: 642+, >@097:7/?@=3 >75:/8 =38/C 4HERSPHQ Y M[r48B mqcn]bcha ][j[\cfcns Y Icab m_hmcncp_@ 7;6gW Y 7 Gilg D ]ih`caol[ncih Gcf_ Ni4@F799:>7 Y W[mb ncabn nsj_ [p[cf[\f_ Y Fhpclihg_hn[f `lc_h^fs jli^o]n /RiIS ]igjfc[hn0 Y Oonfch_ Ecg_hmcihm@ /784; r =4; r 76460 gg

K200707

Abstract: d4454 L218671
Contextual Info: \4M < ► General Purpose Fuses @ DIN Fuse Accessories D-type DIAZED D Fuse System 2 - 200 A, 500 V, 690 V Line protection fuses gL-gG IEC 269-3-1 DIN VDE 0636 Part 31 DIN VDE 0636 Part 301 Dim ensions are stip u la te d in the fo llo w in g regulations:

Contextual Info: 0.|.~ 8:*3141~9:7- 01/0 65<-7 7-2~> .C@MNKCL W W W W W W Gcf_ Ni4@ F79:;7= ; , - Gcf_ Ni4@ :6689=6> W UL chmof[ncih msmn_g@ Df[mm G W Fhpclihg_hn[f `lc_h^fs jli^o]n /RiIS ]igjfc[hn0 W Oonfch_ Ecg_hmcihm@ /7?46 r 7;4; r 7;4;0 gg Gcf_ Ni4@DQD786686=<;8? +512

CHN 527

Abstract: CHN 842 chn 744 chn 529 A/chn 744 91AB A13A 1/CHN 527
Contextual Info: 86-,61 @B2;9<91AB?5 9<A5?;5491A5 >=D5? ?5:1E 6JGUVSJT \ 9B mqcn]bcha ][j[\cfcns Gcf_ Ni2>F57895; \ Dl_j[a_3]f_[l[h]_ ^cmn[h]_A<gg \ 9eV ^c_f_]nlc] mnl_hanb .\_nq_h ]icf [h^ ]ihn[]nm/ C 4 5 \ 5 Gilg B g_nm VEF 4;440 4:75 l_ch`il]_ chmof[ncih \ 5 Gilg D g_nm VEF 4:75 l_ch`il]_ chmof[ncih

644B

Abstract: 744B CHG-B SMR 53-8 528 ZHK
Contextual Info: ><F25 ?=8G AC:H@; <OKYZWOX c I\ga1]md_b` / c 5644V SPT JHCT Gdg` Nj2> F75896< c Cpdgo1di G\no am``1rc``gdib _dj_`n c EDC ]\n` kg\o` c Fiqdmjih`io\g amd`i_gt kmj_p^o G\VQMKR 7VVRQMKYQUTX -RjIS ^jhkgd\io. W`g_dib h\^cdi`0 Jiq`mojm0 UPS0 `o^ :;F9E?DG?CB Wdoc jpokpo m\m`_ ^pmm`io \o 594B0 644B0 744B0 IGS6= dn \ cdbc dio`bm\o`_0 nh\gg k\^f\b` \i_ pn`m amd`i_gt JHCT hj_pg`0 rcd^c

LXF SERIES NIPPON CHEMI-CON

Abstract: Nippon Chemi-Con lxf Nippon Chemi-Con lxf capacitor nippon lxf series nippon lxf LXF Series Nippon Chemi-Con Nippon sxe Nippon Chemi-Con sxe capacitor Nippon Chemi-Con sxe
Contextual Info: Yt AR T E S SrN T E C H N O L 0 I»• GG II E NFC20 SERIES Single and dual output S • • • • • • • • T h e N F C 20 se rie s o f D C /D C c o n v e rte rs o ffe rs 20 W a tts o f o u tp u t p o w e r fro m th e in d u s try s ta n d a rd 2 x 1.6 x 0 .4 6 in ch ca s e w ith o u t a h e a tsin k. A d v a n ta g e s o f

123B

Abstract: 450C
Contextual Info: !"! " !!!!!!!!!!!!!!!!!!!"##$% ' % *! !!!!!!!!!- '$ '(%* !-1 )(, !)*!( ,!"1 !"#$%&'()%*)$+,#-)$%"'.%('%/)(%0&%123%0445#+0(#'&%)60745)%84%0&*%,8&&#&/% '&% (")% 92:;<= .#("'8(% 0+)$$% ('% (")% $'8,+)% +'*)>% % !")% &'()% #$% 0#7)*% 0(% 8$),$% '?% (")% 92:;<=% .#$"#&/%('

BC 567

Abstract: GA49 123B 450C 60745 c70a
Contextual Info: Freescale Semiconductor, Inc. !"! " !!!!!!!!!!!!!!!!!!!"##$% ' % *! !!!!!!!!!- '$ '(%* !-1 )(, !)*!( ,!"1 !"#$%&'()%*)$+,#-)$%"'.%('%/)(%0&%123%0445#+0(#'&%)60745)%84%0&*%,8&&#&/% '&% (")% 92:;<= .#("'8(% 0+)$$% ('% (")% $'8,+)% +'*)>% % !")% &'()% #$% 0#7)*% 0(% 8$),$% '?% (")% 92:;<=% .#$"#&/%('

Contextual Info: GaAs 1C 1800 MHz High Dynamic Range Amplifier ESAlpha AL107-84 S0IC-8 with Slug Features • +33 dBm Output IP3 0.050 1.27 mm BSC PIN 8 ■ 2.9 dB Noise Figure ■ Single +5 V Supply ■ Input and Output Matched to 50 Q ■ Ideal for Celluar Applications

Contextual Info: ESAlpha GaAs 1C 1800 MHz High Dynamic Range Amplifier AL107-84 S0IC-8 with Slug Features • +33 dBm Output IP3 0.050 1.27 mm BSC PIN 8 ■ 2.9 dB Noise Figure ■ Single +5 V Supply ■ Input and Output Matched to 50 Q ■ Ideal for Cellular Applications

Contextual Info: /-;{} ~:953590;, 7,2~= -B?LMJBK S :6B nrdo^cdib ^\k\]dgdot S 7 Gjmh B . 7 Gjmh D ^jio\^o \mm\ib`h`io S RjIS . FLV ^jhkgd\io S Pdi \nndbih`io ndhdg\m oj JSO =;>> k\mo 7 9OID@?E ~IIED@?LDHGK Gjb g\hk . c`\_gdbco ^jiomjg2 R`\m rdi_jr _`ajbb`m2 Bdm3^ji_dodjidib2 Gp`g kphk ^jiomjg2 Djjgdib a\i ^jiomjg2

Contextual Info: GaAs MULTI-CHIP INTEGRATED CIRCUIT MC-5973 OUTLINE DIMENSIONS Units in mm FEATURES LOW DISSIPATIVE CURRENT Total Current Idd - 410 m A (Typ.) at Pout - 30.5 dBm •M i l H ’ HIGH EFFIC IEN C Y AND LOW VO LTAG E O PERATIO N : Total Efficiency, T|T = 63% (Typ.) at P o u t

Contextual Info: MITSUBISHI RF POWER MODULE M68757L SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO OUTLINE DRAWING BLOCK DIAGRAM D im ensions in mm £ PIN: 3 Pin : RF IN PU T © V G G : G ATE BIAS S U P P LY © V D D : D RAIN BIAS S U P PLY ©PO : RF O U TP U T