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GFK37V404S Abstract: K37V4045 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK37V404S 1 4 . 0 - 14.5G H z BAND 5 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F K 3 7 V 4 0 4 5 is an internally impedance matched GaAs power FET especially designed for use in 14.0 ~ 14.5 GHz-band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	GFK37V404S GFK37V404S K37V4045	PDF

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GFK37V404S

Abstract: K37V4045
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK37V404S 1 4 . 0 - 14.5G H z BAND 5 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F K 3 7 V 4 0 4 5 is an internally impedance matched GaAs power FET especially designed for use in 14.0 ~ 14.5 GHz-band amplifiers. The hermetically sealed metal-ceramic

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GFK37V404S GFK37V404S K37V4045

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