GFC42V5258 Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC42V5258 5 .2 —5 .8G H z BAND 1 6W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 4 2 V 5 2 5 8 is an in te rn a lly im pedance m atched GaAs p o w e r F E T especially designed fo r use in 5 . 2 — 5 . 8 G H z band a m p lifie rs . T h e h e rm e tic a lly sealed m eta l-c e ram ic

G25q

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC42VS258 5 . 2 - 5 . 8GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 2 V 5 2 5 8 is an internally impedance-matched GaAs power FE T especially designed fo r use in 5 .2 — 5 .8 GHz band amplifiers. The herm etically sealed metal-ceramic