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    Mitsubishi Electric MGF2407A

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    ComSIT USA MGF2407A 1
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    MIT MGF2407A-01

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    Chip 1 Exchange MGF2407A-01 44
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    MIT MGF2407A

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    Chip 1 Exchange MGF2407A 5
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    GF2407A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF2407A MICROW AVE POW ER GaAs F E T DESCRIPTION The M G F 2 40 7A , power GaAs FET w ith an N-channel scho ttky gate, is designed fo r use in S to Ku band a m p li­ fiers. FEATURES • High o u tp u t power • P-,dB “ 24.5 dB m TYP. @ 14.5 GHz


    OCR Scan     		GF2407A t3-25 PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F2407A M ICRO W AVE POW ER GaAs FE T DESCRIPTION T he M G F 2 4 0 7 A , pow er GaAs F E T w ith an N-channel schottky gate, is designed fo r use in S to Ku band a m p li­ fiers. FEATURES • High o u tp u t power •


    OCR Scan     		F2407A PDF