GERMANIUM NEC Search Results

Contextual Info: SGA-1263 Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block SGA-1263(Z) Preliminary DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar

Contextual Info: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain

SGA1263Z

Abstract: SGA1263
Contextual Info: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain

SGA-1263

Abstract: SGA-1263Z BY 356
Contextual Info: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3237TK LOW NOISE WIDE BAND SILICON GERMANIUM MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The μPC3237TK is a silicon germanium SiGe monolithic integrated circuit designed as low noise amplifier for the

Contextual Info: SGL0263Z SGL0263Z 1400MHz to 2500MHz Silicon Germanium Cascadable Low Noise Amplifier 1400MHz to 2500MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description Features The SGL0263Z is a high performance SiGe HBT MMIC low noise amplifier

marking A12

Contextual Info: Preliminary Product Description SGA-1263 Stanford Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. DC-4000 MHz Silicon Germanium

CL10B103KBNC

Abstract: LL1608-FS27NJ ML200C SGL-0163 RF Identification Devices RFID
Contextual Info: SGL-0163 Z SGL-0163(Z) 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-363 Product Description Features

BLM18HE152SN1D

Abstract: BLM18HE152SN CL10B103KB BLM18HE152 CL10B103KBNC SGL0163Z 80013 CL10B103K 9C06031A0R00
Contextual Info: SGL0163Z SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description Features The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier

CL10B103KBNC

Contextual Info: SGL0163Z SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description Features The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier

BLM18HE152SN1D

Abstract: CL10B103KBNC SGL0163Z 800130 SGL-0163 HEMT MMIC POWER AMPLIFIER MMIC SOT 363 marking CODE 81 marking CODE 81 MMIC SOT 363 68 S3V MMIC SOT 363 marking CODE 81 low noise
Contextual Info: SGL0163Z SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description Features The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier

1900mhz

Abstract: CL10B103KBNC LL1608-FS27NJ SGL-0263
Contextual Info: SGL-0263 Z SGL-0263(Z) 1400MHz to 2500MHz Silicon Germanium Cascadable Low Noise Amplifier 1400MHz to 2500MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-363 Product Description Features

marking c1g

Abstract: C3K marking marking C3Z
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3242TB 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

Contextual Info: DATA SHEET PHOTO DIODE NDL5171P Series 1 300 nm OPTICAL FIBER COMMUNICAITONS ^100 ¿an GERMANIUM AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5171P Series is a Germanium avalanche photo diode module with multimode fiber. It is designed for detectors of long wavelength transmission systems.

Contextual Info: N E C ELECTRONICS INC b2E D • ¡3427525 GG3fiGfl3 235 ■ NECE DATA SHEET NEC PHOTO DIODE NDL5105P, NDL5105P1 ELECTRON DEVICE 1 300 nm OPTICAL FIBER COMMUNICATIONS 4 > 3 0 mty \ GERMANIUM AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5105P and NDL5105P1 are Germanium Avalanche Photo Diodes w ith singlemode fiber, especially designed fo r detectors

BFU790F

Abstract: JESD625-A Germanium power
Contextual Info: BFU790F NPN wideband silicon germanium RF transistor Rev. 1 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

JESD625-A

Abstract: BFU710F DRO lnb Germanium power
Contextual Info: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Contextual Info: SGA0363Z SGA0363ZDC to 5000MHz, Silicon Germanium Cascadable Gain Block DC to 5000MHz, SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features The SGA0363Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and

PC2710TB

Abstract: ro4003 PC3223TB marking c3j
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3236TK 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The μPC3236TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

sga0363z

Abstract: SGA0363ZSR SGA-0363Z rf mems GETEK FR4
Contextual Info: SGA0363Z SGA0363ZDC to 5000MHz, Silicon Germanium Cascadable Gain Block DC to 5000MHz, SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features The SGA0363Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and

sga0163z

Abstract: SGA-0163Z SGA0163ZSR
Contextual Info: SGA0163Z SGA0163ZDC to 4500MHz, Silicon Germanium Cascadable Gain Block DC to 4500MHz, SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features The SGA0163Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and

Contextual Info: SGA0163Z SGA0163ZDC to 4500MHz, Silicon Germanium Cascadable Gain Block DC to 4500MHz, SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features The SGA0163Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and

ECB-101537

Abstract: ECB1 transistor 20 dB 2400 mhz
Contextual Info: Product Description SGA-2186 DC-5000 MHz Silicon Germanium HBT Cascadeable Gain Block Stanford Microdevices’ SGA-2186 is a high performance cascadeable 50-ohm amplifier designed for operation from a 2.2-volt supply. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

marking c3j

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3236TK 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The μPC3236TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.