GENERAL WAFER SPECIFICATION Search Results

MDC 2301

Abstract: 74ACT04 J330 LM108 MIL-HDBK-263 National semiconductor die fr003 NSC die
Contextual Info: Name: ME MAS-2301 Department Specification Title:" GENERAL PROCEDURE FOR DIE AND WAFER SALES " Rev:"2.0" Page: 1 TABLE OF CONTENTS 1. PURPOSE 2 2. APPLICABLE DOCUMENTS 2 3. GENERAL INFORMATION 2 4. DIE AND WAFER PACKAGING SPECIFICATIONS 3 5. GENERAL INSPECTION CRITERIA

IPC-6012

Abstract: IPC-D-279 IPC-6013 IPC-6016 IPC-2223 ipc 7094 IPC-7094 IPC-2226 IPC-6011 IPC-7525
Contextual Info: Maxim > App Notes > General Engineering Topics Prototyping and PC- Board Layout Wireless and RF Keywords: chip scale package, flip chip, CSP, UCSP, U- CSP, BGA, WLCSP May 01, 2008 APPLICATION NOTE 1891 Wafer-level packaging WLP and its applications Abstract: This application note discusses Maxim's wafer-level package (WLP). Topics include: wafer construction, tape-and-reel

Contextual Info: AN-617 Application Note One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Wafer Level Chip Scale Package by the Wafer Level Package Development Team GENERAL DESCRIPTION PURPOSE

Contextual Info: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate

CF001-03

Abstract: CFA0103A low noise x band hemt transistor cfb0103 CFB0103-B CFB0103B CFS0103-SB CFA0103-A Mimix Broadband CF001
Contextual Info: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate

RW34

Contextual Info: Engineering Bulletin No RW34 Rotary Wafer Switches - Model MSD General Information Electrical Characteristics. The MSD is essentially a Heavy Duty rotary switch which is rated at 6amps. at 250Vac. Designed to handle higher currents than is possible with normal types of leaf clip wafer switches. It is eminently

2 poles 6 ways Rotary Switch

Abstract: PT6005 PT603 lorlin uk rotary switch 12 positions PT6006 PT6002 PT6003 PT6004 PT6014 PT6461
Contextual Info: RoHS COMPLIANT PT ROTARY SWITCH GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Switch Rating : Life: Operating Temperature: Proof Voltage: Insulation Resistance: Contact Resistance: Operating Torque nominal End Stop Torque (minimum): Wafer Circuit Board:

lorlin uk rotary switch 12 positions

Abstract: PT6005 CZ108 PT6002 PT6003 PT6004 PT6006 PT6034 PT6461 wafer rotary switches
Contextual Info: RoHS COMPLIANT PT ROTARY SWITCH GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Switch Rating : Life: Operating Temperature: Proof Voltage: Insulation Resistance: Contact Resistance: Operating Torque nominal End Stop Torque (minimum): Wafer Circuit Board:

CFA0301-A

Abstract: CF003-01 CFB0301-B CFB0301
Contextual Info: GaAs MESFET Transistor CF003-01 July 2008 - Rev 15-Jul-08 Features High Gain: 8 dB at 12 GHz P1dB Power: 22 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-01 GaAs-based transistor is a 600 um gate width, sub-half-micron gate length GaAs device with Silicon

pseudomorphic HEMT

Abstract: CF003-03 Hemt transistor
Contextual Info: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,

Contextual Info: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,

RAPS

Abstract: BS1004A push to make switch red push to make switch o general AC BS10-04A BS1004 Polyamid
Contextual Info: RAPS-PUSH BUTTON SWITCH GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Rating: Maintained Rating: Momentary 2 Life: Operating Temperature: Proof voltage: Insulation Resistance: Contact Maintained Contact Momentary (2) Switch Housing: Switch Wafer: Switch Plunger:

combination lock circuit

Abstract: CZ108 CKL5100 lock key switch ck
Contextual Info: CKL5100 LOCK SWITCHES GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Switch Rating: Life: Operating Temperature: Proof Voltage: Insulation Resistance: Contact Resistance: Housing Material: Wafer Material: Contact/Terminal Material: Lock Housing: Keys: o o o

lorlin uk rotary switch 12 positions

Abstract: "Rotary Switch" Bush Lorlin Electronics CZ108
Contextual Info: RA ROTARY SWITCH RoHS COMPLIANT GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Switch Rating: Life: Operating Temperature: Proof Voltage: Insulation Resistance: Contact Resistance: Operating Torque nominal : End Stop Torque (nominal): Wafer: Housing: Contact/Terminal Material:

Zener Diode SOT-23 929b

Abstract: 13.8 8w zener diode zener diode t5 MMSZ4V7T1 MOTOROLA 929B 953b X2 diode zener zener diode T3 Marking diodes zener de 3.5 volts 938B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL DATA 225 mW SOT-23 Zener Voltage Regulator Diodes 225 mW SOT-23 GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP Zener Voltage Regulator Diodes 3 Cathode Manufacturing Locations: 1 Anode WAFER FAB: Phoenix, Arizona

Contextual Info: Preliminary Specification 250V, 64 Channel Push-Pull Driver with Adjustable Source/Sink Current Ordering Information Package Options Device Die in waffle pack Bumped die in waffle Pack Die in wafer form HV3225 HV3225X HV3225BX HV3225WX Features General Description

Contextual Info: SB 3100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 3 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage

Contextual Info: SB 5100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 5 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage

SB360 diode

Abstract: SB360
Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION General Description: 60 V TYPE: SB360 Single Anode 3A Standard VF ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA for wafer form Ir=0.5mA (for dice form) Average Rectified Forward Current

Contextual Info: SB 10100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 10 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage

MBR360

Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION General Description: 60 V TYPE: MBR360 Single Anode 3A Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current

Contextual Info: SB 8100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 8 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage

SB1100S

Contextual Info: SB 1100S SCHOTTKY DIE SPECIFICATION General Description: 100 V 1 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage

Contextual Info: SB 1620 SCHOTTKY DIE SPECIFICATION General Description: 20 V 16 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage