GENERAL WAFER SPECIFICATION Search Results

MDC 2301

Abstract: 74ACT04 J330 LM108 MIL-HDBK-263 National semiconductor die fr003 NSC die
Contextual Info: Name: ME MAS-2301 Department Specification Title:" GENERAL PROCEDURE FOR DIE AND WAFER SALES " Rev:"2.0" Page: 1 TABLE OF CONTENTS 1. PURPOSE 2 2. APPLICABLE DOCUMENTS 2 3. GENERAL INFORMATION 2 4. DIE AND WAFER PACKAGING SPECIFICATIONS 3 5. GENERAL INSPECTION CRITERIA

IPC-6012

Abstract: IPC-D-279 IPC-6013 IPC-6016 IPC-2223 ipc 7094 IPC-7094 IPC-2226 IPC-6011 IPC-7525
Contextual Info: Maxim > App Notes > General Engineering Topics Prototyping and PC- Board Layout Wireless and RF Keywords: chip scale package, flip chip, CSP, UCSP, U- CSP, BGA, WLCSP May 01, 2008 APPLICATION NOTE 1891 Wafer-level packaging WLP and its applications Abstract: This application note discusses Maxim's wafer-level package (WLP). Topics include: wafer construction, tape-and-reel

Contextual Info: AN-617 Application Note One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Wafer Level Chip Scale Package by the Wafer Level Package Development Team GENERAL DESCRIPTION PURPOSE

Contextual Info: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate

CF001-03

Abstract: CFA0103A low noise x band hemt transistor cfb0103 CFB0103-B CFB0103B CFS0103-SB CFA0103-A Mimix Broadband CF001
Contextual Info: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate

RW34

Contextual Info: Engineering Bulletin No RW34 Rotary Wafer Switches - Model MSD General Information Electrical Characteristics. The MSD is essentially a Heavy Duty rotary switch which is rated at 6amps. at 250Vac. Designed to handle higher currents than is possible with normal types of leaf clip wafer switches. It is eminently

RW34

Abstract: 028Nm "Rotary Switch 5 ways 2 poles 6 ways Rotary Switch
Contextual Info: Engineering Bulletin No RW34 Rotary Wafer Switches - Model MSD General Information Electrical Characteristics. The MSD is essentially a Heavy Duty rotary switch which is rated at 6amps. at 250Vac. Designed to handle higher currents than is possible with normal types of leaf clip wafer switches. It is eminently

2 poles 6 ways Rotary Switch

Abstract: PT6005 PT603 lorlin uk rotary switch 12 positions PT6006 PT6002 PT6003 PT6004 PT6014 PT6461
Contextual Info: RoHS COMPLIANT PT ROTARY SWITCH GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Switch Rating : Life: Operating Temperature: Proof Voltage: Insulation Resistance: Contact Resistance: Operating Torque nominal End Stop Torque (minimum): Wafer Circuit Board:

lorlin uk rotary switch 12 positions

Abstract: PT6005 CZ108 PT6002 PT6003 PT6004 PT6006 PT6034 PT6461 wafer rotary switches
Contextual Info: RoHS COMPLIANT PT ROTARY SWITCH GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Switch Rating : Life: Operating Temperature: Proof Voltage: Insulation Resistance: Contact Resistance: Operating Torque nominal End Stop Torque (minimum): Wafer Circuit Board:

PT6005

Abstract: CZ108 PT6002 PT6003 PT6004 PT6006 PT6034 PT6461 lorlin uk rotary switch 12 positions
Contextual Info: RoHS COMPLIANT PT ROTARY SWITCH GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Switch Rating : Life: Operating Temperature: Proof Voltage: Insulation Resistance: Contact Resistance: Operating Torque nominal End Stop Torque (minimum): Wafer Circuit Board:

Contextual Info: RoHS COMPLIANT PT ROTARY SWITCH GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Switch Rating : Life: Operating Temperature: Proof Voltage: Insulation Resistance: Contact Resistance: Operating Torque nominal End Stop Torque (minimum): Wafer Circuit Board:

CFA0301-A

Abstract: CF003-01 CFB0301-B CFB0301
Contextual Info: GaAs MESFET Transistor CF003-01 July 2008 - Rev 15-Jul-08 Features High Gain: 8 dB at 12 GHz P1dB Power: 22 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-01 GaAs-based transistor is a 600 um gate width, sub-half-micron gate length GaAs device with Silicon

pseudomorphic HEMT

Abstract: CF003-03 Hemt transistor
Contextual Info: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,

Contextual Info: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,

combination lock circuit

Abstract: CZ108 CKL5100 lock key switch ck
Contextual Info: CKL5100 LOCK SWITCHES GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Switch Rating: Life: Operating Temperature: Proof Voltage: Insulation Resistance: Contact Resistance: Housing Material: Wafer Material: Contact/Terminal Material: Lock Housing: Keys: o o o

1745-DIMMER

Contextual Info: 1745-DIMMER SWITCH MODULE MDSP SWITCH MODULE GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Rating: Life: Operating Temperature: Proof voltage: Insulation Resistance: 1 Pole Changeover: Housing: Wafer: Plunger: Contacts: Rotor Contacts: Terminals RoHS COMPLIANT

Contextual Info: RA ROTARY SWITCH RoHS COMPLIANT GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Switch Rating: Life: Operating Temperature: Proof Voltage: Insulation Resistance: Contact Resistance: Operating Torque nominal : End Stop Torque (nominal): Wafer: Housing: Contact/Terminal Material:

lorlin uk rotary switch 12 positions

Abstract: "Rotary Switch" Bush Lorlin Electronics CZ108
Contextual Info: RA ROTARY SWITCH RoHS COMPLIANT GENERAL ELECTRICAL & MECHANICAL SPECIFICATION Switch Rating: Life: Operating Temperature: Proof Voltage: Insulation Resistance: Contact Resistance: Operating Torque nominal : End Stop Torque (nominal): Wafer: Housing: Contact/Terminal Material:

photoswitch

Abstract: photoswitch npn
Contextual Info: PHOTOSWITCH R Photoelectric Sensors 42KF Teflon Coated Sensor Description General Specifications Light Source The Teflon encased 42KF photoelectric sensor is an ideal solution for liquid level detection applications typically found in the semiconductor wafer

Zener Diode SOT-23 929b

Abstract: 13.8 8w zener diode zener diode t5 MMSZ4V7T1 MOTOROLA 929B 953b X2 diode zener zener diode T3 Marking diodes zener de 3.5 volts 938B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL DATA 225 mW SOT-23 Zener Voltage Regulator Diodes 225 mW SOT-23 GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP Zener Voltage Regulator Diodes 3 Cathode Manufacturing Locations: 1 Anode WAFER FAB: Phoenix, Arizona

Y1 SOT-23

Abstract: 338 sot-23 SOT-23 marking 77 y6 sot-23 BZX84C12LT1 SOT-23 marking y1 z7 sot-23 marking 638 sot-23 marking Z2 sot23 Z16 SOT23
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL DATA 225 mW SOT-23 Zener Voltage Regulator Diodes 225 mW SOT-23 GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP Zener Voltage Regulator Diodes 3 Cathode Manufacturing Locations: 1 Anode WAFER FAB: Phoenix, Arizona

Contextual Info: Preliminary Specification 250V, 64 Channel Push-Pull Driver with Adjustable Source/Sink Current Ordering Information Package Options Device Die in waffle pack Bumped die in waffle Pack Die in wafer form HV3225 HV3225X HV3225BX HV3225WX Features General Description

Contextual Info: SB 3100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 3 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage

Contextual Info: SB 5100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 5 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage