GENERAL SEMICONDUCTOR MARKING 62A Search Results
GENERAL SEMICONDUCTOR MARKING 62A Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GRM022R61C104ME05L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
GRM033D70J224ME01D | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
GRM155R61H334KE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
GRM2195C2A273JE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
GRMJN65C1H104GE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
GENERAL SEMICONDUCTOR MARKING 62A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
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GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a | |
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
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GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A | |
Contextual Info: FDB13AN06A0 / FDP13AN06A0 N-Channel PowerTrench MOSFET 60V, 62A, 13.5mΩ Features Applications • r DS ON = 11.5mΩ (Typ.), VGS = 10V, ID = 62A • Motor Load Control • Qg(tot) = 22nC (Typ.), VGS = 10V • DC-DC converters and Off-line UPS • Low Miller Charge |
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FDB13AN06A0 FDP13AN06A0 O-220AB O-263AB FDP13AN06A0 | |
TRANSISTOR SMD MARKING CODE 1BW
Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
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vse-db0002-0710 TRANSISTOR SMD MARKING CODE 1BW SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801 | |
XD 105 94V-0
Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
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vse-db0002-1102 XD 105 94V-0 BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG | |
Contextual Info: 1.5SMC6.8A thru 1.5SMC540CA Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional |
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5SMC540CA J-STD-020C, 2002/95/EC 2002/96/EC DO-214AB 08-Apr-05 | |
JESD22-B102D
Abstract: J-STD-002B P6SMB10A P6SMB10CA
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DO-214AA J-STD-020C, 08-Apr-05 JESD22-B102D J-STD-002B P6SMB10A P6SMB10CA | |
Contextual Info: P6SMB6.8A thru P6SMB540A Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional |
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P6SMB540A DO-214AA J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 | |
FDP2614Contextual Info: FDP2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining |
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FDP2614 FDP2614 O-220 | |
Contextual Info: P6SMBxxxAT3 Series Zener Transient Voltage Suppressors GENERAL DATA IS APPLICABLE TO ALL SERIES IN THIS GROUP The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener |
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r14525 | |
1.5SMC43A
Abstract: 420 6V8A
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J-STD-020C, 2002/95/EC 2002/96/EC 18-Jul-08 1.5SMC43A 420 6V8A | |
JESD22-B102D
Abstract: J-STD-002B P6SMB10A P6SMB10CA
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DO-214AA J-STD-020C, 08-Apr-05 JESD22-B102D J-STD-002B P6SMB10A P6SMB10CA | |
JESD22-B102D
Abstract: J-STD-002B marking CODE 62A general
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DO-214AB 08-Apr-05 JESD22-B102D J-STD-002B marking CODE 62A general | |
51C MARKING code
Abstract: DEVICE MARKING CODE 150A marking CODE 91A diode 6v8a marking code 27c type marking code 30C J-STD-002B JESD22-B102D
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DO-214AB 08-Apr-05 51C MARKING code DEVICE MARKING CODE 150A marking CODE 91A diode 6v8a marking code 27c type marking code 30C J-STD-002B JESD22-B102D | |
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Contextual Info: P6SMB Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a |
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DO-214AA J-STD-020C, 08-Apr-05 | |
Pnp transistor smd ba rn
Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
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Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28 | |
CA62
Abstract: JESD22-B102 J-STD-002 DEVICE MARKING CODE 150A
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J-STD-020, 2002/95/EC 2002/96/EC DO-214AB 150lectual 18-Jul-08 CA62 JESD22-B102 J-STD-002 DEVICE MARKING CODE 150A | |
JESD22-B102
Abstract: J-STD-002 P6SMB10A P6SMB10CA P6SMB11A P6SMB12A
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J-STD-020, 2002/95/EC 2002/96/EC DO-214AA 18-Jul-08 JESD22-B102 J-STD-002 P6SMB10A P6SMB10CA P6SMB11A P6SMB12A | |
Contextual Info: FDB2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining |
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FDB2614 | |
Fairchild Semiconductor DS-513Contextual Info: FDP2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining |
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FDP2614 O-220 Fairchild Semiconductor DS-513 | |
JESD22-B102D
Abstract: J-STD-002B P4SMA10CA P4SMA540A
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P4SMA540A J-STD-020C, 2002/95/EC 2002/96/EC DO-214AC 08-Apr-05 JESD22-B102D J-STD-002B P4SMA10CA P4SMA540A | |
JESD22-B102D
Abstract: J-STD-002B P4SMA10A P4SMA10CA P4SMA11A
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J-STD-020C, 2002/95/EC 2002/96/EC DO-214AC 08-Apr-05 JESD22-B102D J-STD-002B P4SMA10A P4SMA10CA P4SMA11A | |
Contextual Info: P4SMA Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional 400 W |
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J-STD-020C, 2002/95/EC 2002/96/EC 18-Jul-08 | |
JESD22-B102D
Abstract: J-STD-002B P4SMA10A P4SMA10CA P4SMA11A GENERAL SEMICONDUCTOR MARKING 36A SMA
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J-STD-020C, 2002/95/EC 2002/96/EC DO-214AC 08-Apr-05 JESD22-B102D J-STD-002B P4SMA10A P4SMA10CA P4SMA11A GENERAL SEMICONDUCTOR MARKING 36A SMA |