GENERAL SEMICONDUCTOR DIODE MARKING 39A Search Results

Contextual Info: FDMS3662 N-Channel Power Trench MOSFET 100V, 39A, 14.8mΩ Features General Description „ Max rDS on = 14.8mΩ at VGS = 10V, ID = 8.9A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

Contextual Info: HUF76633S3ST_F085 N-Channel Logic Level UltraFET Power MOSFET 100V, 39A, 35mΩ D D Features „ Typ rDS on = 28mΩ at VGS = 10V, ID = 39A „ Typ Qg(tot) = 56nC at VGS = 10V, ID = 20A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101 TO-263AB

FQP45N03LT

Abstract: FQP45N03L
Contextual Info: FQP45N03L N-Channel Logic Level MOSFETs 30V, 39A, 0.021Ω General Description Features This device employs advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves

fdd6676as

Abstract: TO-252 fairchild FDD6676A
Contextual Info: FDD6676AS tm 30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

FCH041N60E

Contextual Info: SuperFET II FCH041N60E N-Channel MOSFET Features Description ® The SuperFET II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower

FDD6676A

Abstract: FDD6676AS
Contextual Info: FDD6676AS 30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

FDPF39N20

Contextual Info: FDP39N20 / FDPF39N20 N-Channel UniFETTM MOSFET 200 V, 39 A, 66 m Features Description • RDS on = 66 m (Max.) @ VGS = 10 V, ID = 19.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

Contextual Info: FDD6676AS 30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: FCH041N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 77 A, 41 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

Contextual Info: FDP39N20 / FDPF39N20 N-Channel UniFETTM MOSFET 200 V, 39 A, 66 mΩ Features Description • RDS on = 66 mΩ (Max.) @ VGS = 10 V, ID = 19.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

Contextual Info: HT7939A High Current and Performance White LED Driver Feature General Description • Input voltage range: 2.6V~5.5V The HT7939A is a high efficiency boost converter for driving multiple White LEDs using current mode operation. The device is designed to drive up to 39

Contextual Info: HT7939A High Current and Performance White LED Driver Feature General Description • Input voltage range: 2.6V~5.5V The HT7939A is a high efficiency boost converter for driving multiple White LEDs using current mode operation. The device is designed to drive up to 39

GE Transient Voltage Suppression Manual

Abstract: diode 930 6V8A 2n2646 practical application circuits UJT 2N2646 Transient Voltage Suppression Manual Bidirectional Diode Thyristors 1.5ke 30A Zener Diode SOD323 pdz 4 .7b 919b diode varistor SVC 471 14 melf diode marking code
Contextual Info: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

TRANSISTOR SMD MARKING CODE 1BW

Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

XD 105 94V-0

Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: 60 V, 48 A, 5.3 mΩ Low RDS ON N ch Trench Power MOSFET DKI06075 Features Package TO-252  V(BR)DSS - 60 V (ID = 100 µA)  ID - 48 A  RDS(ON) - 7.0 mΩ max. (VGS = 10 V, ID = 34 A)

Contextual Info: 60 V, 78 A, 5.1 mΩ Low RDS ON N ch Trench Power MOSFET SKI06073 Features Package TO-263  V(BR)DSS - 60 V (ID = 100 µA)  ID - 78 A  RDS(ON) - 6.6 mΩ max. (VGS = 10 V, ID = 39.0 A)

Contextual Info: 60 V, 40 A, 4.8 mΩ Low RDS ON N ch Trench Power MOSFET GKI06071 Features Package  V(BR)DSS - 60 V (ID = 100 µA)  ID - 40 A  RDS(ON) - 6.5 mΩ max. (VGS = 10 V, ID = 34.0 A)

Contextual Info: 60 V, 78 A, 5.1 mΩ Low RDS ON N ch Trench Power MOSFET EKI06075 Features Package  V(BR)DSS - 60 V (ID = 100 µA)  ID - 78 A  RDS(ON) - 6.6 mΩ max. (VGS = 10 V, ID = 39.0 A)

Contextual Info: 60 V, 52 A, 5.1 mΩ Low RDS ON N ch Trench Power MOSFET FKI06075 Features Package  V(BR)DSS - 60 V (ID = 100 µA)  ID - 52 A  RDS(ON) - 6.6 mΩ max. (VGS = 10 V, ID = 39.0 A)

A1907

Abstract: TO-220F-3SG
Contextual Info: BMS3003 Ordering number : ENA1907A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BMS3003 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications

A1907

Abstract: TF-680
Contextual Info: BMS3003 Ordering number : ENA1907 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BMS3003 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications

Contextual Info: BMS3003 Ordering number : ENA1907A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BMS3003 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications