GENERAL SEMICONDUCTOR DIODE MARKING 08 Search Results

Contextual Info: SHV-08J High Voltage Rectifier Diode Features and Benefits Description ▪ High Peak Reverse Voltage, VRM : 4.0 kV ▪ Low Forward Voltage, VF : 8.0 V max. at IF = 10 mA ▪ Peak Forward Surge Current, IFSM : 3 A ▪ Average Forward Current, IF(AV) : 30 mA

T24CD

Abstract: CDSOD323 TVS sod323
Contextual Info: CO LO & MP LI GE AN N T FR EE *R oH S * HA Features Applications • Protects one line or one I/O port ■ VDSL lines ■ Bidirectional configuration ■ Modems ■ ESD protection 30 kV max. ■ Routers ■ Low capacitance ~ 3 pF typ. ■ Replaces 0805 MLV devices

CDSOD323-T05C

Abstract: T18C CDSOD323-T08 CDSOD323-T08C CDSOD323-T12 CDSOD323-T12C CDSOD323-T03 CDSOD323-T03C CDSOD323-T05 CDSOD323-TXXC
Contextual Info: T PL IA N M CO * Ro HS Features • ■ ■ ■ ■ ■ Applications Lead free as standard* Protects 1 line or 1 I/O port Bidirectional configuration ESD protection >40 kV Low capacitance ~3 pF typical Replaces 0805 MLV devices ■ ■ ■ ■ ■ Cell phones

CDSOD323-T05C

Contextual Info: NT IA PL CO M Ro HS * Features • ■ ■ ■ ■ ■ Applications Lead free as standard* Protects 1 line or 1 I/O port Bidirectional configuration ESD protection >40 kV Low capacitance ~3 pF typical Replaces 0805 MLV devices ■ ■ ■ ■ ■ Cell phones

CDSOD323-T03

Abstract: CDSOD323-T05C BiT05C CDSOD323-T03C CDSOD323-T05 CDSOD323-T08 CDSOD323-T08C CDSOD323-T12 CDSOD323-T12C marking pl SOD-323
Contextual Info: PL IA N T Features * Ro HS CO M • ■ ■ ■ ■ ■ Applications Lead free as standard* Protects 1 line or 1 I/O port Bidirectional configuration ESD protection >30 kV Low capacitance ~3 pF typical Replaces 0805 MLV devices ■ ■ ■ ■ ■ Cell phones

Contextual Info: NT IA PL M CO S oH *R Features • ■ ■ ■ ■ ■ Applications Lead free as standard RoHS compliant* Protects 1 line or 1 I/O port Bidirectional configuration ESD protection >40 kV Low capacitance ~3 pF typical Replaces 0805 MLV devices ■ ■ ■

7w08f

Abstract: 7w08
Contextual Info: TOSHIBA TC7W08F/FU TO SH IBA CM OS D IG ITAL INTEGRATED CIRCU IT SILICON M ONOLITHIC TC7W08F, TC7W08FU DUAL 2-INPUT AND GATE The TC7W 08 is a high speed C2MOS 2-INPUT AN D GATE fabricated w ith silicon gate C2MOS technology. It achives the high speed operation sim ilar to equivalent

Contextual Info: FDJ129P P-Channel -2.5 Vgs Specified PowerTrench MOSFET General Description Features This P-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –4.2 A, –20 V.

Contextual Info: Freescale Semiconductor, Inc. Data Sheet: Technical Data Document Number: KL02P20M48SF0 Rev 4 08/2014 Kinetis KL02 32 KB Flash MKL02Z32CAF4R 48 MHz Cortex-M0+ Based Microcontroller Designed with efficiency in mind. Features a size efficient, ultrasmall package, energy efficient ARM Cortex-M0+ 32-bit

Contextual Info: UniFET TM FDB66N15 150V N-Channel MOSFET Features Description • 66A, 150V, RDS on = 0.036Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)

AN-247

Abstract: LM136-2.5
Contextual Info: LM136-5.0/LM236-5.0/LM336-5.0 5.0V Reference Diode General Description The LM136-5.0/LM236-5.0/LM336-5.0 integrated circuits are precision 5.0V shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient 5.0V zener with 0.6Ω dynamic impedance. A third terminal

SS8P3CL

Abstract: JESD22-B102D J-STD-002B
Contextual Info: New Product SS8P2CL & SS8P3CL Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMPTM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Low forward voltage drop, low power losses

S103C

Abstract: SS10P4 SS10P4C S104C JESD22-B102D J-STD-002B to-277A
Contextual Info: New Product SS10P3C & SS10P4C Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP TM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Low forward voltage drop, low power losses

JESD22-B102D

Abstract: J-STD-002B S86C
Contextual Info: New Product SS8P5C & SS8P6C Vishay General Semiconductor High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier FEATURES eSMPTM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Low forward voltage drop, low power losses

Contextual Info: Preliminary US4PBC, US4PCC & US4PDC Vishay General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement K • Oxide planar chip junction

JESD22-B102D

Abstract: J-STD-002B
Contextual Info: New Product SS8P3C & SS8P4C Vishay General Semiconductor High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier FEATURES eSMPTM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Low forward voltage drop, low power losses

MMBV609LT1

Contextual Info: ON Semiconductort Silicon Tuning Diode MMBV609LT1 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT–23 plastic package for

UH4PCC

Abstract: UH4PDC
Contextual Info: Preliminary UH4PBC, UH4PCC & UH4PDC Vishay General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement K • Oxide planar chip junction

1N4148 SOD-123

Abstract: 1N4148 SOT-23 1N4148 MELF pad layout General Semiconductor melf diode marking vishay melf 1N4148W IMBD4148 LL4148
Contextual Info: IMBD4148 Vishay Semiconductors formerly General Semiconductor Small-Signal Diode Mounting Pad Layout TO-236AB SOT-23 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) 0.035 (0.9) Top View .056 (1.43) .052 (1.33) 3 1 0.079 (2.0) 2 0.037 (0.95) .016 (0.4) .016 (0.4)

Contextual Info: IMBD4448 Vishay Semiconductors formerly General Semiconductor Small-Signal Diode Mounting Pad Layout TO-236AB SOT-23 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) 0.035 (0.9) Top View .056 (1.43) .052 (1.33) 3 1 0.079 (2.0) .016 (0.4) 0.037 (0.95) 0.037 (0.95)

diode marking b2

Abstract: JESD22-B102D J-STD-002B
Contextual Info: B2M, B4M & B6M New Product Vishay General Semiconductor Miniature Glass Passivated Single-Phase Bridge Rectifiers FEATURES • UL Recognized, file number E54214 ~ ~ • Ideal for printed circuit boards • Applicable for automative insertion • Middle surge current capability

682 SOT23 MARKING

Contextual Info: ON Semiconductort Silicon Tuning Diode MMBV105GLT1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. • Controlled and Uniform Tuning Ratio

DFA06

Abstract: DF005MA DF01MA DF10MA JESD22-B102D J-STD-002B DFA01 DFA0
Contextual Info: DF005MA thru DF10MA New Product Vishay General Semiconductor Miniature Glass Passivated Single-Phase Bridge Rectifiers FEATURES • UL Recognition, file number E54214 • Ideal for printed circuit boards • Applicable for automative insertion ~ • High surge current capability

Contextual Info: New Product B2M, B4M & B6M Vishay General Semiconductor Miniature Glass Passivated Single-Phase Bridge Rectifiers FEATURES • UL recognized, file number E54214 ~ ~ • Ideal for printed circuit boards • Applicable for automative insertion • Middle surge current capability