GENERAL PURPOSE OF SILICON DIODE WITH 2 A Search Results
GENERAL PURPOSE OF SILICON DIODE WITH 2 A Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GRJ55DR7LV474KW01K | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose | |||
GRJ43DR7LV224KW01L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose | |||
GRJ43QR7LV154KW01L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose | |||
GRJ43QR7LV154KW01K | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose | |||
GRJ43DR7LV224KW01K | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose |
GENERAL PURPOSE OF SILICON DIODE WITH 2 A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: N E C ELECTRONICS INC b2E D • b427525 0037^22 172 H N E C E DATA SHEET NEC PHOTO DIODE NDL2208 ELECTRON DEVICE OPTICAL FIBER COMMUNICATION SILICON PIN PHOTO DIODE D E S C R IP T IO N N D L2 2 0 8 is a PIN photodiode detectors with excellent quantum efficiency, switching speed, and spectral range. This photodetector is designed for a detector of communications system and as general purpose detector for 6 0 0 to 1 100 nm spectral |
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b427525 NDL2208 b427525 | |
SE012
Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
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2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 SE012 SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611 | |
Design with PIN diode alpha
Abstract: APN1003 SMP1307 SMP1307-011 silicon diode ideality factor ATTENUATOR AF PIN diode SPICE model Alpha Industries pin diodes SMP1307-011 spice model
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APN1003 SMP1307-011 OD-323 6/99A Design with PIN diode alpha APN1003 SMP1307 silicon diode ideality factor ATTENUATOR AF PIN diode SPICE model Alpha Industries pin diodes SMP1307-011 spice model | |
MA47600Contextual Info: Silicon PIN Diode Chips Features • GLASS OR SILICON DIOXIDE PASSIVATION 131 ■ HERMETICALLY SEALED CERMACHIP DESIGN ■ FAST SPEED, LOW LOSS MICROWAVE CHIPS ■ ATTENUATOR CHIPS ■ VOLTAGE RATINGS TO 2000 VOLTS ■ WIDE RANGE OF PIN CHARACTERISTICS |
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MIL-STD-883, MA4P504 MA4P606 MA47600 | |
0201 footprint
Abstract: SP1006 DFN 1006
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SP1006 IEC61000-4-5) IEC61000-4-2, 0201 footprint DFN 1006 | |
MILITARY DIODESContextual Info: M t/X & A Silicon PIN Diode Chips Features • GLASS OR SILICON DIOXIDE PASSIVATION ■ HERMETICALLY SEALED CERMACHIP DESIGN ■ FAST SPEED, LOW LOSS MICROWAVE CHIPS ■ ATTENUATOR CHIPS ■ VOLTAGE RATINGS TO 2000 VOLTS ■ WIDE RANGE OF PIN CHARACTERISTICS |
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assembli10-332-6789 MILITARY DIODES | |
TRANSISTOR MOTOROLA MAC 223
Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
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SP1005
Abstract: TVS 0201 Diode sp1005-01
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SP1005 IEC61000-4-2 30kSP1005-01WTG TVS 0201 Diode sp1005-01 | |
600V igbt dc to dc buck converter
Abstract: diode 8a 600v FAN4803 24v output power supply 300khz 600V mosfet driver IC 600v 20 amp mosfet FQPF9N50C equivalent FQPF10N60C equivalent circuit diagram of mosfet based smps power supply FQP9N50C FDS4935 equivalent
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FS6X1220RT FSAT66 FDC796N/FDC3616N FDZ299P FXL34 Power247TM, 600V igbt dc to dc buck converter diode 8a 600v FAN4803 24v output power supply 300khz 600V mosfet driver IC 600v 20 amp mosfet FQPF9N50C equivalent FQPF10N60C equivalent circuit diagram of mosfet based smps power supply FQP9N50C FDS4935 equivalent | |
Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection –- SP1006 SP1006Series Series SP1006 Series 25pF 30kV Unidirectional Discrete TVS RoHS Pb GREEN Description Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of |
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SP1006 IEC61000-4-5) IEC61000-4-2, | |
TVS 0201 Diode
Abstract: SP1007
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SP1007 IEC61000-4-2 51007-01WTG TVS 0201 Diode | |
SP1003
Abstract: SP1003-01DTG
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SP1003 8/20s IEC61000-4-5) 5/50ns) SP1003-01DTG | |
SP1002-01JTG
Abstract: MO-203 SP1002-02JTG IEC61000-4-4 SC70-5 SP1002
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SP1002 SP1002-01JTG SP1002-02JTGD1 SC70-5 SC70-6 SP1002-01JTG MO-203 SP1002-02JTG IEC61000-4-4 | |
SP1004-04VTG
Abstract: SP1004 SOT-95
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SP1004 SP1004-04VTG SOT-95 | |
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Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1005 Series SP1005 Series 30pF 30kV Bidirectional Discrete TVS RoHS Pb GREEN Description The SP1005 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide |
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SP1005 IEC61000-4-2 IEC61000 OD882 | |
Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1005 Series SP1005 Series 30pF 30kV Bidirectional Discrete TVS RoHS Pb GREEN Description The SP1005 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide |
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SP1005 IEC61000-4-2 IEC61000ation OD882 | |
Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1007 Series SP1007 Series 3.5pF 8kV Bidirectional Discrete TVS RoHS Pb GREEN Description The SP1007 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide |
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SP1007 IEC61000-4-2 IEC61000-4-ification OD882 | |
Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1007 Series SP1007 Series 3.5pF 8kV Bidirectional Discrete TVS RoHS Pb GREEN Description The SP1007 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide |
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SP1007 IEC61000-4-2 IEC61000-4-ification OD882 | |
Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1005 Series SP1005 Series 30pF 30kV Bidirectional Discrete TVS RoHS Pb GREEN Description The SP1005 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide |
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SP1005 IEC61000-4-2 IEC61000ation OD882 | |
17434
Abstract: 343 "cross-reference" opto cross reference 4n35f 4n26f 94766 H11A1 "cross reference" 4N25M H11A4 4N35M
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H11A1 H11A2 H11A3 H11A4 H11A5 E90700) 4N25V-M) 4N25-M /imaging/BITTING/cpl/20020725 10/FAIR/07252002/4N37-M 17434 343 "cross-reference" opto cross reference 4n35f 4n26f 94766 H11A1 "cross reference" 4N25M H11A4 4N35M | |
Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1003 Series SP1003 Series - 30pF 30kV Unidirectional Discrete TVS RoHS Pb GREEN Description Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of |
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SP1003 IEC61000-4-5) IEC61000-4-2, OD882 | |
Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1003 Series SP1003 Series - 30pF 30kV Unidirectional Discrete TVS RoHS Pb GREEN Description Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of |
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SP1003 IEC61000-4-5) IEC61000-4-2, IEC61071 OD882 | |
Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1003 Series SP1003 Series - 30pF 30kV Unidirectional Discrete TVS RoHS Pb GREEN Description Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of |
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SP1003 IEC61000-4-5) IEC61000-4-2, IEC61071 OD882 | |
Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1004 Series SP1004 Series 5pF 8kV Bidirectional TVS Array RoHS Pb GREEN Description Back-to-back zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a |
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SP1004 IEC61000-4-2, OT953 |