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GE200K
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Cornell Dubilier
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Disc Ceramic Capacitors |
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131.52KB |
2 |
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GE200NB60S
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STMicroelectronics
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N-CHANNEL 150A - 600V - ISOTOP PowerMESH IGBT |
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263.63KB |
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PXT8550(RANGE:200-350)
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JCET Group
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PXT8550 PNP transistor in SOT-89-3L package with -25 V collector-emitter voltage, -1.5 A continuous collector current, 0.5 W power dissipation, and DC current gain ranging from 85 to 400 depending on rank. |
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S9012 2T1(RANGE:200-350)
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JCET Group
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PNP transistor in SOT-23 package with -25V collector-emitter voltage, -500mA collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400. |
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SS8050(RANGE:200-350)
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JCET Group
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NPN transistor in SOT-23 package with collector current up to 1.5 A, collector-emitter breakdown voltage of 25 V, DC current gain (hFE) from 120 to 400, and transition frequency of 100 MHz. |
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BC548(RANGE:200-450)
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JCET Group
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NPN transistor in TO-92 package with high voltage capability, complement to BC556/BC557/BC558; available in BC546, BC547, and BC548 variants with collector-emitter voltage ratings from 30V to 80V and DC current gain from 110 to 800. |
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2SC2712(RANGE:200-400)
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JCET Group
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NPN transistor in SOT-23 package with 50 V collector-emitter voltage, 150 mA continuous collector current, low noise figure of 1.0 dB typical, and DC current gain ranging from 70 to 700, suitable for audio frequency amplifier applications. |
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MMBT1616A(RANGE:200-400)
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JCET Group
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MMBT1616A NPN transistor in SOT-23 package, rated for 60V collector-emitter voltage, 1A collector current, with hFE range 135–600, 100MHz transition frequency, and 350mW power dissipation. |
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BC546-TA(RANGE:200-450)
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JCET Group
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NPN transistor in TO-92 package with high voltage capability, complement to BC556/BC557/BC558; available in BC546, BC547, and BC548 variants with collector-emitter voltage ratings from 30V to 80V and DC current gain from 110 to 800. |
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B772(RANGE:200-400)
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JCET Group
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PNP transistor in SOT-89-3L package with -40V collector-base voltage, -30V collector-emitter voltage, -3A continuous collector current, 0.5W power dissipation, and DC current gain ranging from 60 to 400. |
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SS8050-G(RANGE:200-350)
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JCET Group
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NPN transistor in SOT-23 package with 25V collector-emitter voltage, 1.5A collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400, suitable for general-purpose switching and amplification applications. |
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2SD596(RANGE:200-320)
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JCET Group
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NPN transistor in SOT-23 package with 25 V collector-emitter voltage, 700 mA continuous collector current, high DC current gain up to 400, and transition frequency of 170 MHz. |
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S9013-G(RANGE:200-350)
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JCET Group
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NPN transistor in SOT-23 package with 500 mA collector current, 25 V collector-emitter voltage, 300 mW power dissipation, and DC current gain ranging from 120 to 400 depending on rank. |
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BC857S(RANGE:200-450)
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JCET Group
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BC857S is a dual PNP transistor in SOT-363 package with 45 V collector-emitter breakdown voltage, 200 MHz transition frequency, and DC current gain up to 630, designed for compact circuit applications. |
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KTC3198(RANGE:200-400)
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JCET Group
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NPN transistor in TO-92 package, rated for 60 V collector-base breakdown voltage, 50 V collector-emitter voltage, 150 mA continuous collector current, with a transition frequency of 80 MHz and DC current gain up to 700. |
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BC546(RANGE:200-450)
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JCET Group
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NPN transistor in TO-92 package with high voltage capability, available in BC546, BC547, and BC548 variants, featuring collector current up to 0.1 A, power dissipation of 625 mW, and DC current gain from 110 to 800. |
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B772M(RANGE:200-400)
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JCET Group
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PNP transistor in TO-252-2L plastic package with -30V collector-emitter voltage, -3A continuous collector current, 1.25W power dissipation, and DC current gain ranging from 60 to 400. |
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D882S-TA(RANGE:200-400)
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JCET Group
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NPN transistor in TO-92 package with collector-base voltage of 40 V, collector-emitter voltage of 30 V, emitter-base voltage of 6 V, continuous collector current of 3 A, and collector power dissipation of 625 mW. |
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MPS2222A-TA(RANGE:200-300)
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JCET Group
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NPN transistor in TO-92 package with 40 V collector-emitter voltage, 75 V collector-base voltage, 0.6 A continuous collector current, and 625 mW power dissipation, featuring a DC current gain (hFE) of 100 to 300. |
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S9012-G(RANGE:200-350)
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JCET Group
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PNP transistor in SOT-23 package with -25V collector-emitter voltage, -500mA collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400. |
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PXT8550(RANGE:200-350)
