GE2 75A Search Results

Contextual Info: MITSUBISHI IGBT MODULES CM75DU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­

Contextual Info: CM75TU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 SÍX IGBTMOD U-Series Module 75 Amperes/1200 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists

CM75DU-24H

Contextual Info: MITSUBISHI IGBT MODULES CM75DU-24H HIGH POW ER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a re­

Contextual Info: MITSUBISHI IGBT MODULES CM75E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel di­

GE2 75A

Contextual Info: MITSUBISHI IGBT MODULES CM75TF-28H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de­ signed fo r use in sw itching a pp lica ­ tions. Each m odule consists of six IGBTs in a three phase bridge co n ­ figuration, w ith each tra n sisto r hav­

Contextual Info: MITSUBISHI IGBT MODULES CM75DY-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­

Contextual Info: MITSUBISHI IGBT MODULES CM75DY-12H HIGH POWER SWITCHING USE INSULATED TYPE I Description: M itsubishi IGBT M odules are de­ signed fo r use in sw itching a pp lica ­ tions. Each m odule consists of tw o IGBTs in a half-bridge configuration w ith each tra n sisto r having a reve rse-connected su pe r-fa st recov­

DIODE ITT 310

Abstract: CM75E3Y-12E CM75E3Y-12 00D7243 75e3y
Contextual Info: CM75E3Y-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Chopper IGBTMOD E-Series Module 75 Amperes/600 Volts Description: CM75E3Y-12E Chopper IGBTMOD™ E-Series Module 75 Amperes/600 Volts Powerex Chopper IG B T M O D ™

CM75DY-12E

Abstract: GE2 TRANSISTOR
Contextual Info: b4E ]> n • V E ' m b S l D G G b 7 2 D 1□□ * P R X CM75DY-12E IGBTMOD . , , E-series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U S l Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14

Contextual Info: m r a e r CM75DY-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 DUSl IGBTMOD H-Series Module 75 Amperes/600 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists

Contextual Info: POUEREX < M IN C E BSE H E D TSTMbSl X ODGHSIS 5 MPRX < IQ 2 2 6 0 1 0 Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43)41.14.14 '3 1 - S i Chopper IGBTMOD

ID226075

Abstract: Z103 ma
Contextual Info: POülEREX INC m o u rn 3TE I> e M 72*^21 r _ Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 ÜG0M7eJ3 3 H P R X ID226075 * ^ -31-31

K512

Abstract: KRY 112 442 dual band XTS01 2.2 un 1950 adr transport book national semiconductor Broadcom cli debug powerpc pci bridge kry 112 42 KRY 112 75 dual band
Contextual Info: MSC8154E Reference Manual Quad Core Digital Signal Processor with Security MSC8154ERM Rev 0, September 2010 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc.

SC3850 DSP Core Subsystem Reference Manual

Abstract: KRY 112 442 dual band fet 27611 4G lte chip modem usb KRY 112 442 MSC8156ERM 2SD 2581 EPROM 27126 schema electronic modem 3g made in china 6A200
Contextual Info: MSC8156E Reference Manual Six Core Digital Signal Processor with Security MSC8156ERM Rev 0, September 2010 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc.

wimax soc

Abstract: MSC8154E KRY 112 442 dual band csr bc4 KRY 112 75 1 Transceiver Broadcom 3G RF KRY 112 75 1 dual band DDR3 DIMM 2SD 2581 schema electronic modem 3g made in china
Contextual Info: MSC8154E Reference Manual Quad Core Digital Signal Processor with Security MSC8154ERM Rev 1, November 2010 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc.

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published