GE TRACTION MOTOR Search Results

AEG igbt

Contextual Info: VISHAY BCCOMPONENTS www.vishay.com Aluminum Capacitors Application Note Aluminum Electrolytic Capacitors for Traction Applications By Theo van de Steeg, Jules Spanjaars, and Harm van Driel INTRODUCTION TO THE APPLICATION Traction is a blanket term for applications in trains or “rolling stock.” Both the electrical propulsion systems as well as the

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Abstract: DIM400XSM65-K000
Contextual Info: DIM400XSM65-K000 Single Switch IGBT Module DS5808-1.1 October 2005 FEATURES • High Thermal Cycling Capability • Soft Punch Through Silicon • Isolated MMC Base with AlN Substrates KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN24289)

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Contextual Info: DIM400XSM65-K000 Single Switch IGBT Module DS5808-1.0 November 2004 FEATURES • High Thermal Cycling Capability • Soft Punch Through Silicon • Isolated MMC Base with AlN Substrates KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN23659)

Contextual Info: 24 23 21 22 20 19 17 IB 16 15 14 13 11 12 V 10 8 7 SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON AN INDIVIDUAL COMPONENT DRAWING. M COD MISSING NUMBERS 26-29, TOTAL NO. OF SYMBOLS

Contextual Info: mmasx CM400HA-34H Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Single IGBTMOD H-Series Module 400 Amperes/1700 Volts 4 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists

Contextual Info: MITSUBISHI IGBT MODULES CM400HA-34H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching appli­ cations. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast

IGBT 7000V

Abstract: ge traction motor DIM200KSM65-K000 CC4400 IGBT 6500v L 3005 TRANSISTOR STK411-550G datasheet
Contextual Info: DIM200KSM65-K000 Single Switch IGBT Module DS5819-1.0 November 2004 FEATURES • High Thermal Cycling Capability • Soft Punch Through Silicon • Isolated MMC Base with AlN Substrates KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN23680)

MTBF IGBT module

Abstract: MTBF IGBT fit IEC60749 igbt failure AN5945-3 igbt qualification circuit igbt testing procedure ge traction motor igbt module testing IEC60068-2-14 vibration
Contextual Info: AN 5945 IGBT Module Reliability Application Note AN5945-3 October 2009 LN26894 Authors: Dinesh Chamund, David Newcombe INTRODUCTION: Dynex Semiconductor products are used in a variety of power electronics systems such as power generation and distribution systems,

advantage and disadvantage of igbt

Abstract: failure analysis IGBT Calculation of major IGBT operating parameters IEC60749-5 igbt failure fit IEC60749 MTBF IGBT fit IEC60068-2-14 IEC60068-2-27 IEC60068-2-6
Contextual Info: AN 5945 IGBT Module Reliability Application Note AN5945-5 October 2010 LN27638 Authors: Dinesh Chamund, David Newcombe INTRODUCTION: Dynex Semiconductor products are used in a variety of power electronics systems such as power generation and distribution systems,

DIM200PHM33-F000

Abstract: ge traction motor DS5606-1
Contextual Info: DIM200PHM33-F000 DIM200PHM33-F000 Half Bridge IGBT Module Preliminary Information DS5606-1.2 June 2003 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability APPLICATIONS

bi-directional switches IGBT

Abstract: DIM1200ESM33-F000
Contextual Info: DIM1200ESM33-F000 Single Switch IGBT Module DS5831-1.1 January. 2008 LN25870 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Isolated MMC Base with AIN Substrates Lead Free construction KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK)

DS5820-1

Abstract: 4400 transistor
Contextual Info: DIM2400ESM17-E100 Single Switch IGBT Module DS5820-1.0 November 2004 FEATURES High Thermal Cycling Capability Soft Punch Through Silicon ✁ Isolated MMC Base with AlN Substrates ✁ KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN23687)

Contextual Info: @ M ITEL GP400LSS16S Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation DS4987 - 1.3 The GP400LSS16S is a single switch 1600V, robust n channel en han cem ent m ode insulated gate b ipolar transistor IGBT module. Designed for low power loss, the

rf pogo pin

Abstract: SMD W2f w2f smd jx 8114 high current pogo pin AVX smd film capacitors CF AVX 9156 AVX film chip capacitors RC ARRAY DISCRETE CAP kyocera design guide
Contextual Info: zm >:< A KYO CER A G RO U P COMPANY Product Guide for Industrial appiica tio n s The Complete list of Application Guides available: A KYO CERA G R O U P CO M PAN Y _ Automotive Consumer EDP High Rel and Military Industrial Mobile Communications Miscellaneous Products

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Contextual Info: GP500LSS06S M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R DS4324 - 4.4 Decem ber 1998 S upersedes July 1998 version, DS4324 - 4.3 The GP500LSS06S is a single switch 600V, robust n channel e nhancem ent mode insulated gate bipolar transistor IGBT . Designed for low power loss, the module

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Abstract: DS493
Contextual Info: @M ITEL GP800DHB12T Powerline N-Channel IGBT Module SEMICONDUCTOR A dvance Inform ation Supesedes August 1998, version DS4931-2.0 DS4931-3.5 February 1999 The GP800DHB12T is a dual switch 1200V, robust n channel enhan cem e nt m ode Insulated gate bipolar

half bridge circuit diagram

Abstract: lc 6231 ge traction motor 12v dc to 220a cv inverter circuits diagrams GP200MHB12S UPS circuit diagram
Contextual Info: @ MITEL GP200MHB12S Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4339 - 4.2 The GP200MHB12S is a single switch 1200V, robust n channel en han cem ent m ode insulated gate b ipolar transistor IGBT module. Designed for low power loss, the

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Abstract: CM400HA-34H 500V welding inverter PD4100 CM400HA
Contextual Info: CM400HA-34H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Single IGBTMOD H-Series Module 400 Amperes/1700 Volts A B R - M4 THD (2 TYP.) N Q - DIA. (4 TYP.) E J H A B P - M8 THD (2 TYP.) H G E C G M F M D K L C E E Features:

DIM400NSM33-F000

Abstract: 60749
Contextual Info: DIM400NSM33-F000 Single Switch IGBT Module DS5883-2.1 November 2008 LN26439 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 3300V 2.8 V 400A 800A *(measured at the power busbars and not the auxiliary terminals)

DIM600ASM65-K000

Abstract: DS5825-1
Contextual Info: DIM600ASM65-K000 Single Switch IGBT Module DS5825-1.0 January 2005 LN23752 FEATURES High Thermal Cycling Capability Soft Punch Through Silicon ✁ Isolated MMC Base with AlN Substrates ✁ APPLICATIONS 6500V 4.0V 600A 1200A *(measured at the power busbars and not the auxiliary terminals)

DS4137

Contextual Info: GP400LSS12S 0IT I M ITEL S E M IC O N D U C T O R Powerline N-Channel IGBT Module DS4137 - 7.4 Decem ber 1998 S upersedes July 1998 version, DS4137 - 7.3 The GP400LSS12S is a single switch 1200 volt, robust n channel enhancem ent mode insulated gate bipolar

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Contextual Info: GP250MHB06S M ITEL S E M IC O N D U C T O R Powerline N-Channel IGBT Module DS4325 - 4.4 Decem ber 1998 S upersedes July 1998 version, DS4325 - 4.3 The GP250MHB06S is a dual switch 600V robust n channel e nhancem ent mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the

RC-6123

Abstract: RC 6123 MELF 0207 str 6668 Micro MELF vishay melf 0204 melf RC3715 mini-melf beyschlag
Contextual Info: V is hay Beyschlag w w w. v i s h a y. c o m S e l ector G uide thin film melf resistors resisti v e products V I S HAY I N T E R T E C HN O L O G Y , I N C . Thin Film MELF Resistors Vishay Beyschlag Features • Industry standard sizes: • Excellent stability under pulse load up to 1000 W

GP150MHB16S

Contextual Info: IV II^ T E L GP150MHB16S L_ Powerline N-Channel IGBT Module S E M IC O N D U C T O R . . . , dvance Inform ation Supersedes April 1998 version, DS4131 -6 .6 The GP150MHB16S is a dual switch 1600 volt, robust