GE POWER DIODE Search Results

2SD2105

Contextual Info: HITACHI 2SD2105— -Silicon NPN Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings Ta = 25ÛC Item S ym bol Rating Unit C o lle cto r to base volta ge V CB0 120 V C o lle cto r to em itter voltage VCE0 120 V E m itter to base volta ge

IRF242

Abstract: IRF243
Contextual Info: FEF FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. IRF242.243 16 AMPERES »00,150 VOLTS

IRFD212

Abstract: IRFD213
Contextual Info: Ftmr IRFD212,213 HELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. 0.45 AMPERES 200,150 VOLTS

ipc-9592b

Abstract: QBVW025A0B54Z
Contextual Info: GE Data Sheet QBVW025A0B Barracuda* Series; DC-DC Converter Power Modules 36-75Vdc Input; 12.0Vdc, 25.0A, 300W Output RoHS Compliant Applications • Distributed power architectures •  Intermediate bus voltage applications Servers and storage applications

IRF232

Abstract: IRF233
Contextual Info: FIT FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. IRF232,233 8.0 AMPERES 200,150 VOLTS

Contextual Info: GE Data Sheet PicoTLynxTM 6A: Non-Isolated DC-DC Power Modules 2.4Vdc –5.5Vdc input; 0.6Vdc to 3.63Vdc output; 6A Output Current Features EZ-SEQUENCETM RoHS Compliant Applications • Distributed power architectures • Intermediate bus voltage applications

D86DL2

Abstract: IRF130 CPD75
Contextual Info: IRF130,131 P86DL2,K2 [jSSMlMiCS FEF RELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. 14.0 AMPERES

RTF6

Abstract: IRF632 IRF633 IRF632 ge
Contextual Info: FIT FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. IRF632,633 8.0 AM PERES 200,150 VOLTS

Contextual Info: GE Data Sheet 12V TLynxTM 20A: Non-Isolated DC-DC Power Module 4.5Vdc –14Vdc input; 0.69Vdc to 5.5Vdc output; 20A Output Current Features RoHS Compliant EZ-SEQUENCETM Applications • Distributed power architectures • Intermediate bus voltage applications

IRFF430

Abstract: IRFF431 TD-205A
Contextual Info: Fm? HELD EFFECT POWER TRANSISTOR IRFF430,431 2.75 AMPERES 500, 450 VOLTS RDS ON = 1.5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

IRFF312

Abstract: IRFF313
Contextual Info: FUT HELD EFFECT POWER TRANSISTOR IRFF312,313 1.15 AMPERES 400, 350 VOLTS Rd S ON = 5.0 Í1 Preliminar/ This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

IRF3503

Abstract: IRF350 IRF351 D86FQ2 350VOLTS
Contextual Info: IM ÜF FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. IRF350.351 D86FQ2.Q1 15 AMPERES

XED 2013 Y

Abstract: XED 2013 Y supply
Contextual Info: GE Data Sheet KSTW010A0A Barracuda Series; DC-DC Converter Power Modules 36-75Vdc Input; 5.0Vdc, 10A Output Features RoHS Compliant Applications • Wireless Networks • Hybrid power architectures  Optical and Access Network Equipment  Enterprise Networks including Power over Ethernet PoE

Contextual Info: GE Data Sheet KSTW010A0F Barracuda* Series; DC-DC Converter Power Modules 36-75Vdc Input; 3.3Vdc, 10A Output Features RoHS Compliant Applications • Wireless Networks • Hybrid power architectures  Optical and Access Network Equipment  Enterprise Networks including Power over Ethernet PoE

IRF430

Contextual Info: IRF430,431 D86DR2,R1 FUir FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. 4.5 AMPERES 500, 450 VOLTS

Contextual Info: [FUT FIELD EFFECT POWER TRANSISTOR IRFD1Z2,1Z3 0.5 AMPERES 100, 60 VOLTS »DS ON = 2.4 f ì This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

IRFF432

Abstract: IRFF433 IRF 260 N CII solenoid
Contextual Info: FUT FIELD EFFECT POWER TRANSISTOR IRFF432,433 2.25 AMPERES 500, 450 VOLTS RPS(ON = 2.0 n Prelim inary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

Contextual Info: GE Data Sheet KHHD010A0F Hammerhead Series; DC-DC Converter Power Modules 18-75Vdc Input; 3.3Vdc, 10A Output Features RoHS Compliant Applications • Wireless Networks • Hybrid power architectures  Optical and Access Network Equipment  Enterprise Networks including Power over Ethernet PoE

D84 TRANSISTOR

Abstract: IRF830 RF830 j01 relay
Contextual Info: IRF830,831 D84DR2,R1 FUT FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. 4.5 AMPERES 500, 450 VOLTS

D84CN2

Abstract: IRF620 RF620
Contextual Info: PUF IRF620.621 D84CN2.M2 5 AMPERES 200,150 VOLTS Rd s (ON = 0.8 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

transistor tl 187

Abstract: IRF542 IRF543 2415a
Contextual Info: [FÂiiMÆSSF IRF542,543 24 AMPERES 100, 60 VOLTS INDS ON = 0.11 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

XED 2013 Y

Abstract: XED 2013 Y supply 202S48W
Contextual Info: GE Data Sheet KHHD015A0F Hammerhead Series; DC-DC Converter Power Modules 18-75Vdc Input; 3.3Vdc, 12A/15A Output RoHS Compliant Applications • Wireless Networks • Hybrid power architectures  Optical and Access Network Equipment  Enterprise Networks including Power over Ethernet PoE

chang capacitor 10uf 50v

Contextual Info: GE Data Sheet KSTW010A0A Barracuda Series; DC-DC Converter Power Modules 36-75Vdc Input; 5.0Vdc, 10A Output RoHS Compliant Features Applications • Wireless Networks • Hybrid power architectures  Optical and Access Network Equipment  Enterprise Networks including Power over Ethernet PoE

Contextual Info: GE Data Sheet KHHD006A0A Hammerhead Series; DC-DC Converter Power Modules 18-75Vdc Input; 5.0Vdc, 6A Output Features RoHS Compliant Applications • Wireless Networks • Hybrid power architectures  Optical and Access Network Equipment  Enterprise Networks including Power over Ethernet PoE