GE DR 25 Search Results

vc-6v3

Abstract: BA6238
Contextual Info: rx 04 DO GE Uklad scalony duzej skali integracji IX 04 D O GE jest procesorem SYSCO N /astosow anym w odtw arzaczu z m ozliw osci^ nagryw ania SHARP VC-6V3 DR. Steruje ukladem s ervo IX 03222 GE, a przez uklad BA 6238 silnikami Lidowania kasety i tasmy. Taktowany jest zegarem o cz^stotliw osci 4 M Hz,

pinol

Abstract: 10GBASE-LR GR-1089-CORE DS5155
Contextual Info: Preliminary Datasheet SPP-DR-LR-CDFA Features  Support GE and 10GE applications  Up to 10km transmission on SMF  1310nm DFB laser and PIN receiver  SFI high speed electrical interface  2-wire interface with integrated Digital Diagnostic monitoring

1.25G 850NM

Abstract: GR-1089-CORE
Contextual Info: Preliminary Datasheet SPP-DR-SR-CDFA Features  Support GE and 10GE applications  Up to 300m transmission distance at 10.3Gbps on 50 m MMF 2000MHz.km  Up to 550m transmission distance at 1.25Gbps on 50μm MMF (500MHz.km)  850nm VCSEL and PIN receiver

GE thyristor

Abstract: ge-2 transistor DR-6 GE DR6GE Transistor GE 67 ge-10 transistor proximity capactive sensor GE power SCR DR3GE Ge NPN
Contextual Info: Proximity Sensors Capacitive Steel Housing Types DR GE, M 14, PG 21, 13/8" • Steel housing, cylindrical • Diameter: M 14, PG 21, 1 3/8" • Sensing distance: 3 to 10 mm • Power supply: 10 to 27 VDC 90 to 240 VAC • LED-indication for output ON AC types

ECG1610

Abstract: ECG1510 DECG1510 VITA 1300 application note
Contextual Info: PHILIPS E C G INC 17E 1 ^ 5 3 ^ 0 G00SSS7 5 • 7 ' \ 5 ^ ' - j 3 ' 0 7 Q ■ ECG1510 V o lta ge Level Ind. Dr., 5 Step O utput for LED , Linear Scale Sem iconductors .Iie" 3.0>- ,768"tl9.5 M A X. Features • Bar-type display of Input level using 5 LEDs

Contextual Info: IB NtCAUS ORON. DATA B U T A I » IN THIS DOQJ P f f I S PBOPHIETARY TE T H XfE TBI BJ3CTRtMtCS INC. AW SHALL NOT GE n r m n w r Q FIBD DR USED FOB p w w B B B f f OB MAMFACTURE VXTHUT B n B S WITTEN PBMISSXIM. REV F OASH NO CONN TYPE A DIM 1.773 ±.030 PL0O

2142P

Abstract: IC ssm2142 SM2141 SSM2142
Contextual Info: ANALOG DEVICES Balanced Line Driver SSM2142 FEATURES T r a n s f o r m e r - L i k e Bal an ced O u t p u t Dr i v e s 10 V RMS I nt o a 600 12 Load St ab l e W h e n D r i v i n g Lar ge Ca p a c i t i v e L o a d s and Long Cabl es FUNCTIONAL BLOCK DIAGRAM

kingston usb memory 2gb

Contextual Info: O T S ER EL V A TR A T DA R E L dt CU RE E FIL S SE E G R CU KIN E V B GY B A O L S O R S U HN T C UATA SH STON TE D A ING IVE IT AC AP RY VE US B AS M O EM Y SE DR H C SH HIG TO N GE A OR T S FLA GS ER DT EL AV R TAT DA R E LE AG VE OR RA ST TAT DA KIN L

Contextual Info: 7050^ 0 0 0 ^ 2 1 0 SIT • R H U ABSOLUTE M A X IM U M RATINGS TA = 25°C : Pow er D issipation PD . 16 0 m W Forward Current lF . 1 0 0 m A Peak Forward Current lFp. 1 .0 A *

Contextual Info: CCD Linear Image Sensor MN3673RE Color CCD Linear Image Sensor with 2592 Bits each for R, G, and B Colors • Overview ■ Pin Assignments M Di ain sc te on na tin nc ue e/ d The MN3673RE is a 2592-pixel high sensitivity CCD linear image sensor combining photo-sites using low dark output floating

65997-05-9

Abstract: vid 200
Contextual Info: Sida: 1 / 5 Varuinformationsblad Enligt 91/155/EEG Datum för utskriften: 20.01.2003 Omarbetat: 06.11.2001 1 Namnet på produkten och företaget • Produktuppgifter · Handelsnamn: 256-;276 Sn95,5/Ag3,8-4%/Cu0,5-0,7% · Artikelnummer: 7119 · Ämnets användning / tillredningen Lödlegering

SN62 PB36 ag2

Abstract: SN62 PB36 ag2 kester SN63 PB36 SN63 PB37 gefstoffv PB36 kester 256 omar SN62 MP Sn62Pb36Ag2
Contextual Info: Sida: 1 / 5 Varuinformationsblad Enligt 91/155/EEG Datum för utskriften: 07.11.2002 Omarbetat: 07.11.2002 1 Namnet pä produkten och företaget • Produktuppgifter · Handelsnamn: 256-; 276 Sn62/Pb36/Ag2,Sn63/Pb37 · Artikelnummer: 7087 · Ämnets användning / tillredningen Lödlegering

25F60CPM

Contextual Info: PowerMOSFET •外観図 F25F60CPM OUTLI NE Package：FTO220A （3pi n） ロット記号 （例） Date code 600V25A t ：mm Uni 4.5 10.０ 品名略号 Type No. 0000 25F60CPM ３.45 煙高耐圧 煙低オン抵抗 煙高速スイッチング 15.０ （例）

ETAD-C0198

Abstract: Henkel
Contextual Info: 0 1 : 4 7 :37 c a ro l.trib b le 2010/04/14 A P P LIC A B LE STA N D A RD -25 OPERATING RATING °C TO +85 °C -10 STORAGE TEMPERATURE TEMPERATURE RANGE 3C TO +60 °C RANGE VOLTAGE AC 30 CURRENT V , DC 42 2 V A APPLICABLE CABLE S P E C IF IC A T IO N S ITEM

Contextual Info: ARK-LES CORPORATION PAST »»ME: R I NG TERM I NAL . 250 I 40 I I0 I 45 I I5 . 440 FIGURE FEED I S T A N D A R D R E E L I NG if, f . 4 0 0 0 4G I - 5 FIGURE REVERSE (I.E. FIGURE 2 REELING 4 0 0 0 ,4GI - 5 R ) 3 T I N E S DOWN W/REVERSE REELING (I.E.

MC 790 P

Abstract: 1D-10A
Contextual Info: Æ lltro n 3301 ELECTRONICS WAY. T E L : 407 848-4311 N-CHANNEL ENHANCEMENT MOS FET 4 0 0 V, 1O A , 0 . 5 6 n SDF340 SDF340 dr -CD VDSS 400 V dc VDGR 400 V dc VGS ±20 Vdc Gate-Source Voltage C o n ( i nuous Drain Current Continuous ( T c = 25° C) SCHEMATIC

SD 4060

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information T 86 N E-Cu-rope 0,5mm² Siliconcoat red 8,4 C E-Cu-rope 0,5mm² Siliconcoat yellow Plug 6,3 x 0,8 E-Cu-cable 25mm² Silicon tube red SW27 A M12 VWK Aug. 1996 T 86 N Elektrische Eigenschaften

Contextual Info: OIXYS PRELIMINARY DATA SHEET IXGH28N30A IXGH28N30AS HiPerFAST IGBT \ CES IC25 * CE sat typ. W) Symbol Test Conditions VCES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V v GES Continuous ±20 V VœM Transient ±30 V *C25 Tc = 25° C

MXJ HOUSING

Contextual Info: IM äEfB ô L S ê S ?: z-z 2. 5263PBT ô 5267 ÿ U - X ,5268 v ' J — ~ X A g se L ta n ^ a u , Y-Y 3.3 0.9 A 4- I 1 0 \ I £ ü i u i ü i ií / 38.3 / 35.8 35 \ / 33.3 30 X 30.8 27.5 / \ 28.3 25 - 5 113 - 1 25.8 22.5 - 5 103 - 10 10 20 -5 0 9 3 -09 9 17.5

Contextual Info: 2SK3148 Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • Low on-resistance • Rds = 45 m ii typ. High speed switching • 4 V gate drive device can be driven from 5 V source Outline T O -2 2 0 F M Absolute Maximum Ratings Ta = 25 °C

5264-02

Contextual Info: IM äEfB ô L S ê S ?: z-z 2. 5263PBT ,5268 v ' J — ~X ô 5267 ÿ U - X A g se L ta n ^ a u , Y-Y 3.3 0.9 A 4- I 1 0 \ / 38.3 \ I £ ü i u i ü i ií i ü i u i ü r d / m T -5143 33.3 30 30.8 27.5 / \ 28.3 25 - 5 113 - 1 25.8 22.5 - 5 103 - 10 10 20 -5 0 9 3

Contextual Info: 2SK1880 L , 2SK1880 S Silicon N C h a n n e l M O S F E T Application DPAK-1 High speed power switching Features • • • • Low on—resistance High speed switching No secondary breakdown Suitable for Switching regulator 1. 2. 3. 4. Table 1 Absolute Maximum Ratings Ta = 25 ° C

SD 4060

Abstract: DSE 130 -10A
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information T 86 N E-Cu-rope 0,5mm² Siliconcoat red 8,4 C E-Cu-rope 0,5mm² Siliconcoat yellow Plug 6,3 x 0,8 E-Cu-cable 25mm² Silicon tube red SW27 A M12 VWK Aug. 1996 T 86 N Elektrische Eigenschaften

Contextual Info: 7 DRAWI NG MADE THIS IN DRAWI NG THIRD 15 ANGLE UNPUBLI 5HED COPYRIGHT 6 5 19 RELEASED BY AMP 3 4 2 <3> PROJ E CT I ON FOR P U B L I C A T I O N INCORPORATED. ALL INTERNATIONAL RIGHTS D I ST L OC 1 9 R E V AD RESERVED. DIA 2 25 PLC ZONE I 5 I 0 N 5 DE5CR[PTION