GDT, SEMITRON Search Results
GDT, SEMITRON Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| GDT, semitron
Abstract: Semitron PF 1002 transistor 1002 
 | Original | ||
| GDT, semitron
Abstract: Semitron SL1011 
 | Original | SL1011* GDT, semitron Semitron SL1011 | |
| Semitron
Abstract: SL1011 GDT, semitron 
 | Original | SL1011* Semitron SL1011 GDT, semitron | |
| 1003Contextual Info: Semitron 1003 1003 Semitron minitube seriesseries minitube b e 3 ELECTRODE GDT GRAPHICAL SYMBOL SEMITRON GREENTUBE SERIES 3 TERMINAL MINI ARRESTER SERIES TOTALLY NON-RADIOACTIVE ELECTRICAL CHARACTERISTICS 090V 230V 260V 350V DC SPARKOVER V 70-120 184-276 | Original | 15MAX 1003 | |
| GDT, semitron
Abstract: telephone hybrid gdt testing gdt testing method 1793 c GDT application hybrid gas arrester GDT, semitron, BT 
 | Original | ||
| SL1021A090Contextual Info: Semitron 1021 1021 medium Semitron duty arrester series medium arrester a b e 3 ELECTRODE GDT a=TIP b=RING e=GROUND SEMITRON GREENTUBE SERIES 3 TERMINAL ARRESTER SERIES TOTALLY NON-RADIOACTIVE UL RECOGNIZED ELECTRICAL CHARACTERISTICS centre electrode | Original | ||
| Contextual Info: Semitron 1021 1021 heavy Semitron duty arrester series heavy duty a b e 3 ELECTRODE GDT a=TIP b=RING e=GROUND SEMITRON GREENTUBE SERIES 3 TERMINAL HEAVY DUTY ARRESTER SERIES TOTALLY NON-RADIOACTIVE, UL RECOGNIZED ELECTRICAL CHARACTERISTICS centre electrode | Original | ||
| sl 1053
Abstract: Semitron semitron 9.1 semitron 1026 
 | Original | ||
| diode 18b
Abstract: GDT, semitron, BT 18-A 
 | Original | 8A/18B/18C D2982B 10ion, 8A/18B diode 18b GDT, semitron, BT 18-A | |
| F10-NC1006
Abstract: F10-NL1006 F10-NL1022 F10-NL1039 
 | OCR Scan | ai37fiflT 000G134 F10Waveform F10-NC1006 F10-NL1006 NU012 F10-NL1022 F10-NL1039 10jjS 100mS | |
| GDT, semitron,Contextual Info: m o Q o s iiw s * SMILS00004 Description The Semitron-Crydom SLT is based on the proven SiBO D Silicon Breakover Device technology, designed for transient protection of telecommunication equipment. It provides higher power handling than a conventional avalanche diode (TVS) and | OCR Scan | SMILS00004 200mA 10/160jas GDT, semitron, | |
| DO-2144AAContextual Info: tape & reel Features • Bi-directional transient voltage protection • Nano second clamping response • Surge capability up to 250 amps • No performance degradation packaging Our surface-mount components are placed in embossed cavities of anti static/conductive carrier | Original | ||
| GDT, semitron,Contextual Info: S E M T R O N INDUSTRIES LTD 13E 1 • ai37iai 0000134 D « S L C B - P I 1- r> FIO DATA LINE PROTECTION Transient Voltage Suppressor ■Glass Passivated Junction Voltage Range 6.8V to 48 Volts Nominal 100A Peak Pulse Current APPLICATIONS NEW GENERATION ■ Transient voltage suppression for Induced Lightning, NEMP, | OCR Scan | ai37iai DO-35 DO-35 DO-41 DO-15 DO-201AD GDT, semitron, | |
| T10N.C
Abstract: melf footprint PA-080 
 | OCR Scan | 137flâ T10NC DO-35 DO-35 DO-41 DO-15 DO-201AD T10N.C melf footprint PA-080 | |
|  | |||