GD 241 C Search Results

GY 123

Abstract: SY 170 gd 241 c gd241c funkamateur sy 166 sy 164 VSF203 VSF200 SF 127
Contextual Info: Preisliste für Halbleiterbauelemente gültig ab 18. November 1969 Type EVP alt M ark EVP neu M ark Germanium- und Silizium-Gleichrichter GY 099 GY 100 GY 101 GY 102 GY 103 GY 104 GY 105 GY 109 GY 110 GY 111 GY 112 GY 113 GY 114 GY 115 GY 120 GY 121 GY 122

Contextual Info: GD54/74HC241, GD54/74HCT241 OCTAL NONINVERTING 3-STATE BUFFERS General Description These devices are identical in pinout to the 5 4 /7 4 L S 2 4 1 . They contain eight noniverting b u f­ fers with one active-low and one active-high enable. Each enable independently con tro ls 4 buffers.

4506 gh

Abstract: CB 7805 CW 7805 H6b 25 dk qb 7805 ck 8DAA wv-cq BD-9C KJ 9D
Contextual Info: 1UJF CJRVSU @NHONRL VJRVSU {1| 3SXRWJU _6JFWXUJV \+A6HI>8 >C?:8I>DC 86H: {2| DNQJU \.A>B 7D9Nc2mjRzknjR/kjhoBBd \2>9: G6C<: D; H:CH>C< 9>HI6C8:cjhkPmBf jhjoPkBd \}JIJ6A >CI:G;:G:C8: EG:K:CI>DCcx-w, sitd {3| DJQT~ HSRWUSPPJU \|><=I *~iv6G@ *~ HL>I8=>C< BD9:

Contextual Info: 97.07-/ ]z,3aeejvaf^ <:=:2BC@6 9:89 ?>E6@ @6;2F 7JGTURJS W gd q GK=H7<=B; 75D56=@=HM v=@9 ~Cbnueghiek W h?1 8=9@97HF=7 GHF9B;H< ]69HK99B 7C=@ 5B8 7CBH57HG^ W x95JM @C58 ID HC kidd1q W s@5GG v =BGI@5H=CB 5J5=@56@9 v=@9 ~Cbn-iddgedlj W gAA 7CBH57H ;5D 5J5=@56@9

IRLML2402

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1257A IRLML2402 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching VDSS = 20V RDS(on) = 0.25Ω

Contextual Info: Tem ic SÌ6933DQ S e mi c o nd uc t o r s Dual P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) rDS(on) (ß ) I d (A) 0.045 @ VGS = -10 V ±3.5 0.085 @ VGs = -4.5 V ±2.5 30 TSSOP-8 G2 Gi "ni Top View d2 P-Channel M OSFET P-Channel M OSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)

Contextual Info: SIEMENS 16 M X 1-Bit Dynamic RAM HYB 5116100AJ-50/-60/-70/-80 HYB 5116100ASJ-50/-60/-70/-80 Advanced Inform ation • 16 777 216 words by 1-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version

GDE 4C

Abstract: CI -dp904c YLE relay
Contextual Info: 97/.07-0 `}/6cgfkycka <:=:2BC@6 9:89 ?>E6@ @6;2F 7KHWXUKV Z Z Z Z Z Z ift JN@K:?@E> :8G89@C@KP {<8MP CF8; LG KF mbhff4t .vu :F@C K<ID@E8CJb @;<8C =FI ?<8MP ;LKP CF8; 58J? K@>?K 8E; ;LJK GKFK<:K<; KPG<J 8M8@C89C< vC8JJ y @EJLC8K@FE 8M8@C89C< jB4 ;@<C<:KI@: JKI<E>K?

smd diode marking 271

Abstract: SIPMOS N-channel Small-Signal-Transistor
Contextual Info: BSP89 Rev. 2.1 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS RDS on · Enhancement mode ID · Logic Level 240 V 6 W 0.35 A PG-SOT223 · dv/dt rated • Pb-free lead plating; RoHS compliant 4.5V rated lead plating; RoHS compliant

Contextual Info: blE D • ^24^02^ DG1MSM7 SÖ7 ■ HITS MITSUBISHI LASER DIODES ML4XX5 SERIES MITSUBISHI DISCRETE SC FOR OPTICAL INFORMATION SYSTEMS TYPE NAME DESCRIPTION FEATURES ML4XX5 is a visible light AIGaAs sem iconductor • Low threshold current, low operating current

Contextual Info: SAMSUNG ELECTRONICS INC bME » • IRF9620/9621 /9622/9623 7 S b 4142 0D 12271 ‘H û «SMlSK P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure

circuit TOP 242 PN

Abstract: Diode 1525 RD561 315J IRF720 LS33 diode ru
Contextual Info: PD-9.315J International S Rectifier IRF720 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V d s s - 400V R DS on = 1 -8 Í2 lD = 3.3A Description T h ird G e n e ra tio n H E X F E T s fro m In te rn a tio n a l R e ctifie r p rovid e th e d e sig n e r

Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _ ¿¿PA1912 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION T h e JUPA1912 PACKAGE DRAWING Unit : mm is a sw itching d ev ic e which can be driven directly by a 2 .5 -V p o w e r source.

pj 67 diode

Abstract: dvr circuit diagram T408F T290F js 1200
Contextual Info: European PowerSem iconductor and Electronics Company Marketing Information TT 200 F 35 '¡ A S LO a ' CO 2 8,5 -►*+-1 ^ -n \li 5 1 I ^ — 4 - - 4 AK ! ° 6 K K1 G1 K2 G2 VWK Okt. 1996 TT 200 F, TD 200 F, DT 200 E le k t r is c h e E ig e n s c h a f te n

aod409

Abstract: Transistor EAR - 3 AOI409
Contextual Info: AOD409/AOI409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD/I409 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for

thyristor BT 161

Contextual Info: I . I Bulletin 127104 rev. A 09/97 International i q r Rectifier i r k . f 7 2 „ s e r ie s FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules Features • 71 A Fast turn-off thyristor ■ Fast recovery diode ■ High surge capability

Contextual Info: MITSUBISHI -CDGTL LOGIC} D Ê J bE^fiS? 00121^5 0 J ~ 9 1 D MITSUBISHI ASTTLs 1 2 1 9 5 M 7 4 A S157P T - 66-21-51' ,rc\e-P>3* 5°’ QUADRUPLE 2-LINE TO 1-LINE DATA SELECTOR/MULTIPLEXER DESCRIPTION The M74AS157P is a semiconductor integrated circuit consisting of four 2-line to 1-line data selector/multi’ plexer circuits.

gc 301

Abstract: selen-gleichrichter GAZ17 GY125 GD244 VEB M ik ro e le k tro n ik 04A657 ITT transistoren ga106 selen
Contextual Info: Erläuterung der Kurzzeichen von Halbleiterbauelem enten Transistoren B b C 1 15 C 22 b C 1h 2 i ä f h2 1o fT f F 1121 o | Il I2Tj| I E> Im o 11 • i>; o le n s IrKV Io Ic I K Bo In I d l^tot B ung Basisschaltung, Basis E in g an g sk ap azität MOS -FE T )

TPS2592ZA

Contextual Info: TPS2592XXEVM-531 EVM: TPS2592XX Evaluation Module User's Guide User's Guide Literature Number: SLVU923A June 2013 – Revised November 2013 Contents 1 Introduction 1.1 1.2 . 4

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.

Halbleiterbauelemente DDR

Abstract: Dioden SY 250 diode sy-250 B250C135 u103d GD244 transistor gc 301 SAM42 diode sy 166 D172C
Contextual Info: electronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz-und Kenndaten der in der DDR getertigten Halbleiterbauelemente. Die Kennwerte werden im allgemeinen für eine Umgebungs­ temperatur von 25 °C angegeben.

telemecanique contactor catalogue

Abstract: LA9-D09980 LC1-F630 LC1-F225 telemecanique lc1 fh 43 LC1F150 LC1-F330 LC1-F400 lc1f LC1F500
Contextual Info: Contactors F 3-pole contactors for motor control, 115 to 780 A Utilisation category AC-3 Control circuit : a.c. or d.c. c or a References 3-pole contactors 1 Standard power ratings of 3-phase motors 50/60 Hz in category AC-3 Rated operational current in AC-3

Contextual Info: T2 UNITRODE CORP 9347963 UNITRODE DE I ^ 3 4 7 ^ 3 □□10bû4 1 CORP 92D 10684 D f i- 3 J - / J POWER MOSFET TRANSISTORS 500 Volt, 0.85 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability

Contextual Info: MwT-A3 I E S I 26 GHz High Gain, Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y so |4 1.8 dB NOISE FIGURE A T 12 GHZ +20 DBM OUTPUT POWER A T 12 GHZ 11 DB SMALL SIGNAL GAIN A T 12 GHZ 0.3 MICRON REFRACTORY METAL/GOLD GATE 300 MICRON GATE WIDTH CHOICE OF CHIP AND THREE