GD 241 C Search Results

GY 123

Abstract: SY 170 gd 241 c gd241c funkamateur sy 166 sy 164 VSF203 VSF200 SF 127
Contextual Info: Preisliste für Halbleiterbauelemente gültig ab 18. November 1969 Type EVP alt M ark EVP neu M ark Germanium- und Silizium-Gleichrichter GY 099 GY 100 GY 101 GY 102 GY 103 GY 104 GY 105 GY 109 GY 110 GY 111 GY 112 GY 113 GY 114 GY 115 GY 120 GY 121 GY 122

LD5203

Abstract: asp 1103 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN U881 AC176K KPSA 10-15 Scans-048 TL836 Leipzig U 3211
Contextual Info: SERVICE-M ITTEILUNGEN V E ft UFT I N D U S T K I E V E K T * I E ft R U N D F U N K U N O F E t N S E H E N ErjSiH Iradio - te/evisfon I A u tg a b * 1988 Seit* 7 1 - 4 M i t t e i l u n g a u s d en VBB S t e r n - B a d l o B e r l i n P e h l e r a u c h a t r a t e g l e HMK-D 1 0 0 L P 5 » C o « p a t e * l * i t e * p l a t t e

Contextual Info: GD54/74HC241, GD54/74HCT241 OCTAL NONINVERTING 3-STATE BUFFERS General Description These devices are identical in pinout to the 5 4 /7 4 L S 2 4 1 . They contain eight noniverting b u f­ fers with one active-low and one active-high enable. Each enable independently con tro ls 4 buffers.

4506 gh

Abstract: CB 7805 CW 7805 H6b 25 dk qb 7805 ck 8DAA wv-cq BD-9C KJ 9D
Contextual Info: 1UJF CJRVSU @NHONRL VJRVSU {1| 3SXRWJU _6JFWXUJV \+A6HI>8 >C?:8I>DC 86H: {2| DNQJU \.A>B 7D9Nc2mjRzknjR/kjhoBBd \2>9: G6C<: D; H:CH>C< 9>HI6C8:cjhkPmBf jhjoPkBd \}JIJ6A >CI:G;:G:C8: EG:K:CI>DCcx-w, sitd {3| DJQT~ HSRWUSPPJU \|><=I *~iv6G@ *~ HL>I8=>C< BD9:

Contextual Info: 97.07,. <:=:2BC@6 9:89 ?>E6@ @6;2F 7JGUVSJT V gdq FJ<G6;<A: 64C45<?<GL v<?8 }Bbnueghiek V h>0 7<8?86GE<6 FGE8A:G; ]58GJ88A 6B<? 4A7 6BAG46GF^ V g@@ 6BAG46G :4C 4I4<?45?8 v<?8 }Bbn,ideihkff V /{ <AFH?4G<BA FLFG8@n s?4FF v 4I4<?45?8 V uAI<EBA@8AG4? 9E<8A7?L CEB7H6G ],Bx- 6B@C?<4AG^

A114F

Contextual Info: 97.07,/ <:=:2BC@6 9:89 ?>E6@ @6;2F 7JGTURJS U gdq FJ<G6;<A: 64C45<?<GL v<?8 }Bbnueghiek U h>0 7<8?86GE<6 FGE8A:G; ]58GJ88A 6B<? 4A7 6BAG46GF^ U s?4FF v <AFH?4G<BA 4I4<?45?8 v<?8 }Bbn,ideihkff U g@@ 6BAG46G :4C 4I4<?45?8 U uAI<EBA@8AG4? 9E<8A7?L CEB7H6G ],Bx- 6B@C?<4AG^

MODELS 248, 249

Abstract: ACIM adc matlab code D 249 ISOmodem Si3019 Si3019 Application Note Si305x AN84 Si3050
Contextual Info: AN84 D I G I TA L H Y B R I D W I T H T H E Si305 X DAA S 1. Introduction This application note is a guide to understanding and implementing the digital hybrid feature found in Si305x DAA products. The Si305x contains an on-chip analog hybrid that performs the 2- to 4-wire conversion and

Contextual Info: 97.07-/ ]z,3aeejvaf^ <:=:2BC@6 9:89 ?>E6@ @6;2F 7JGTURJS W gd q GK=H7<=B; 75D56=@=HM v=@9 ~Cbnueghiek W h?1 8=9@97HF=7 GHF9B;H< ]69HK99B 7C=@ 5B8 7CBH57HG^ W x95JM @C58 ID HC kidd1q W s@5GG v =BGI@5H=CB 5J5=@56@9 v=@9 ~Cbn-iddgedlj W gAA 7CBH57H ;5D 5J5=@56@9

IRLML2402

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1257A IRLML2402 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching VDSS = 20V RDS(on) = 0.25Ω

Contextual Info: NOTES: UNLESS OTHERWISE SPECIFIED 1. NOTICE: RoHS 2. 3. T H IS IS A R o H S COMPLIANT C O M PO N EN T /P R O D U C T . ALL EN G IN EERIN G C H A N G ES M U ST HAVE P R IO R APPRO VAL BY TH E D ESIG N CENTER. dddoddoddodd : PLASTIC: THERMOSET PLASTIC MATERIAL WITH

Contextual Info: Tem ic SÌ6933DQ S e mi c o nd uc t o r s Dual P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) rDS(on) (ß ) I d (A) 0.045 @ VGS = -10 V ±3.5 0.085 @ VGs = -4.5 V ±2.5 30 TSSOP-8 G2 Gi "ni Top View d2 P-Channel M OSFET P-Channel M OSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)

IRF8734PBF

Abstract: IRF8734TRPBF
Contextual Info: PD - 96226 IRF8734PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage

Contextual Info: SIEMENS 16 M X 1-Bit Dynamic RAM HYB 5116100AJ-50/-60/-70/-80 HYB 5116100ASJ-50/-60/-70/-80 Advanced Inform ation • 16 777 216 words by 1-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version

Contextual Info: fc Pulse ' Electronics ww w.pulseelectronics.com NOTES: UNLESS OTHERWISE SPECIFIED 1. NOTICE: RoHS THIS IS A RoHS COMPLIANT CO M PO NEN T/PRO DU CT. ALL ENGINEERING CHANGES MUST HAVE PRIOR APPROVAL BY THE DESIGN CENTER. dooddooddodd: PLASTIC: THERMOSET PLASTIC MATERIAL WITH

B56B

Abstract: NL JH gd xe
Contextual Info: ;AH,.-/7,. a}{ihm{eib =:>:2DEB6 9:89 @?G6B B6<2I 7NKYZWNX [ khv LPBM<ABG@ <:I:;BEBMR [ 0xw <HBE M>KFBG:ELd B=>:E ?HK A>:OR =NMR EH:= {BE> .Hfrziklmio [ l+6 =B>E><MKB< LMK>G@MA a;>MP>>G <HBE :G= <HGM:<MLb [ }>:OR EH:= NI MH odjhh6v [ /I>Gd L>:E>= ` =NLM <HO>K MRI>L :O:BE:;E>

tl071 tl081

Abstract: LF451
Contextual Info: LF451 m,JFETA* - 241 - 0 X / U - 1 - - ¡-.m /u s • À ^ ' M T X iift:5 0 p A 0ÁMMME: 25nV /vr Hz •te fi 'y Y • '/ - X m m. m a fâ AAiTfcMKE t u s A ÍJ^ff n s iiA ^ œ » ff a * hf « m ife E # m Vos TC/Vos Vos/time Ib JöjMTT&ffiL I os K n v ï^ w .

smd diode marking 271

Abstract: SIPMOS N-channel Small-Signal-Transistor
Contextual Info: BSP89 Rev. 2.1 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS RDS on · Enhancement mode ID · Logic Level 240 V 6 W 0.35 A PG-SOT223 · dv/dt rated • Pb-free lead plating; RoHS compliant 4.5V rated lead plating; RoHS compliant

STB45NF3LL

Contextual Info: STB45NF3LL N-CHANNEL 30V - 0.014Ω - 45A D2PAK STripFET II POWER MOSFET TYPE STB45NF3LL • ■ ■ ■ VDSS RDS on ID 30V <0.018Ω 45A TYPICAL RDS(on) = 0.016Ω @4.5V OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED

Contextual Info: blE D • ^24^02^ DG1MSM7 SÖ7 ■ HITS MITSUBISHI LASER DIODES ML4XX5 SERIES MITSUBISHI DISCRETE SC FOR OPTICAL INFORMATION SYSTEMS TYPE NAME DESCRIPTION FEATURES ML4XX5 is a visible light AIGaAs sem iconductor • Low threshold current, low operating current

Contextual Info: SAMSUNG ELECTRONICS INC bME » • IRF9620/9621 /9622/9623 7 S b 4142 0D 12271 ‘H û «SMlSK P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure

circuit TOP 242 PN

Abstract: Diode 1525 RD561 315J IRF720 LS33 diode ru
Contextual Info: PD-9.315J International S Rectifier IRF720 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V d s s - 400V R DS on = 1 -8 Í2 lD = 3.3A Description T h ird G e n e ra tio n H E X F E T s fro m In te rn a tio n a l R e ctifie r p rovid e th e d e sig n e r

Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _ ¿¿PA1912 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION T h e JUPA1912 PACKAGE DRAWING Unit : mm is a sw itching d ev ic e which can be driven directly by a 2 .5 -V p o w e r source.

Contextual Info: CRD1616-8W CRD1616-8W 8 Watt Reference Design Features General Description • Quasi-resonant Flyback with Constant-current Output The CRD1616-8W reference design demonstrates the performance of the CS1616 single stage dimmable AC/DC LED driver IC with a 250mA output driving 10  LEDs in

pj 67 diode

Abstract: dvr circuit diagram T408F T290F js 1200
Contextual Info: European PowerSem iconductor and Electronics Company Marketing Information TT 200 F 35 '¡ A S LO a ' CO 2 8,5 -►*+-1 ^ -n \li 5 1 I ^ — 4 - - 4 AK ! ° 6 K K1 G1 K2 G2 VWK Okt. 1996 TT 200 F, TD 200 F, DT 200 E le k t r is c h e E ig e n s c h a f te n