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STP3N60 Abstract: stp3n60xi ISOWATT221 Contextual Info: SCS-THOMSON STP3N60XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss S TP3N 60XI ! 600 V R D S o n 2.5 n ! Id r 2.4 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED • REPETITIVE AVALANCHE DATA AT 100°C . APPLICATION ORIENTED CHARACTERIZATION	OCR Scan	STP3N60XI ISOWATT221 GC24I60 CC24170 GC3S79Q STP3N60 stp3n60xi ISOWATT221	PDF

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STP3N60

Abstract: stp3n60xi ISOWATT221
Contextual Info: SCS-THOMSON STP3N60XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss S TP3N 60XI ! 600 V R D S o n 2.5 n ! Id r 2.4 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED • REPETITIVE AVALANCHE DATA AT 100°C . APPLICATION ORIENTED CHARACTERIZATION

OCR Scan

STP3N60XI ISOWATT221 GC24I60 CC24170 GC3S79Q STP3N60 stp3n60xi ISOWATT221

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